Q4 220 V Search Results

SONY 1310

Abstract: SI 1360 H
Contextual Info: sony. CXB1132Q/Q-Y 9, 8, Dual 4-bit Universal Shift Register Description Pin Assignment The CXB1132Q is an ultra high speed monolithic Universal Shift Register with variable bit length. Select inputs SI and S2 select a function mode from parallel load, hold, shift right and shift left S3

Contextual Info: CXB1532Q-Y SONY. 9, 8, Dual 4-bit Universal Shift Register Description Pin Assignment The CXB1532Q-Y is an ultra high speed monolithic Universal Shift Register with variable bit length. Select inputs S I and S2 select a function mode from parallel load, hold, shift right, and shift left S3

Contextual Info: CXB1532Q-Y Son y. 9, 8, Dual 4-bit Universal Shift Register Description The CXB1532Q-Y is an ultra high speed monolithic Universal Shift Register with variable bit length. Select inputs S I and S2 select a function mode from parallel load, hold, shift right, and shift left S3

200mh inductor

Abstract: 100mh inductor design inductor 2mH inductor 100mh TE 555 MIL-T-27
Contextual Info: Models TE and TD Vishay Dale Filter Inductors Toroid FEATURES • Choice of encapsulated TE or dipped (TD) styles. • TD style combines low cost with excellent performance in commercial applications. • High Q and wide selection of Q versus frequency ranges in one small package.

Contextual Info: SONY CORP/COMPONENT PRODS 5DE &3&23B3 SONY . - a ? - 0 s~ 9, 8, Dual 4-bit Universal Shift Register Description The CXB1532Q-Y is an ultra high speed monolithic Universal Shift Register with variable bit length. Select inputs S I and S2 select a function mode

MURS1100

Abstract: SANYO 1000uF 35V 6912A CAPACITOR 47UF 25V ELECTROLYTIC 35mv1000ax c24 transistor FZT749 CAPACITOR ALUMINUM ELECTROLYTIC 10UF 25V 9v 500ma transformer 35MV100
Contextual Info: CPE Modem 9V to 16V INPUT C2 1uF 10V 13 R1 68k 2 D1 CMPSH-3 20 VP 19 VL BST ILIM COMP C1 8.2nF DH GND U1 MAX1865T R17 100k OUT 1 POK FB C3 0.1uF 17 16 DL C5 4.7uF 25V 18 LX VL C4 1000uF 25V MV-AX 15 T1 1:1:2 Lpri = 3.8uH VP4-0047 N1A 1/2 FDS 6912A R2 10 R3

Contextual Info: Order this document by MC3392/D MC3392 Advance Information Low Side Protected Switch The MC3392 is a low side protected switch designed for use in harsh automotive applications which require the capability of handling high voltages attributed to load and field dump transients, in addition to reverse

9744

Abstract: 974-4 AN9744 gilbert cell 5.1 transistor amplifier circuit diagram HFA3127 PNP Transistor Arrays Intersil gilbert cell differential pair HFA3046 HFA3102
Contextual Info: RF Up/Down Conversion Is Simplified By Linear Arrays TM Application Note July 1997 Linear Arrays Have Advantages Over Discrete Transistors Q5 C1 1nF 5V - L1 1µH VO Q2 C3 1nF RL 50Ω RE 5.1Ω - + VS + FIGURE 2. MULTISTAGE TRANSISTOR AMPLIFIER The advantages of linear arrays over discrete transistors are

MC1455 timer

Abstract: flyback led driver with pwm dimming 0-10 V PULSE CONTROL DIMMER LED DRIVER IC FET TO 220 MOT E DATA SHEET IN 965 b zener diode 1N4001 MC1455 MC3392 MC3392DW MC3392T
Contextual Info: Order this document by MC3392/D MC3392 Low Side Protected Switch The MC3392 is a low side protected switch designed for use in harsh automotive applications which require the capability of handling high voltages attributed to load and field dump transients, in addition to reverse

NPN Transistor TO92 40V 200mA

Abstract: ELECTROLYTIC capacitor 330 35v transformer 220 25v transistor 1002 of capacitor 33uf 35v FZT789A C25 schottky 25MV100AX diode 0102 EC05Q04
Contextual Info: ADSL Modem 8V to 18V INPUT C3 1uF C5 330uF 35V MV-AX 3x D1 CMPSH-3 13 R1 68k C1 15nF 2 20 V+ 19 VL ILIM BST COMP DH C2 100pF 17 LX 16 DL VL GND C6 4.7uF 35V 18 15 C4 0.1uF N1A 1/2 FDS6930A R3 4.7 R4 4.7 1,2 N1B 1/2 FDS6930A 14 OUT1 1 POK FB1 B2 3.3V@1A 12,11

Contextual Info: VS-ETF150Y65U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 150 A FEATURES • Trench IGBT technology • FRED Pt clamping diodes • PressFit pins technology • Exposed Al2O3 substrate with low thermal

sanyo capacitor 1000uf 25v

Abstract: Capacitor 3300uF 10V electrolytic capacitor 1uF 25v 3300uf 47uf, 16v electrolytic capacitor CAPACITOR 47UF 25V ELECTROLYTIC 0805 10V CAPACITOR X7R 4.7UF 330uF 16V capacitor electrolytic capacitor 3300uf 25v sanyo capacitor 680uf 25v
Contextual Info: DSL Modem 9V to 16V INPUT C2 1uF 10V 13 R1 68k 2 C4 1000uF 25V MV-AX D1 CMPSH-3 20 VP 19 VL BST ILIM DH COMP C1 8.2nF C5 4.7uF 25V 18 17 C3 0.1uF 16 LX DL VL GND 1,2,3 15 3.3V@1.8A 10,11,12 C13 2x 680uF 10V MV-AX N1B 14 U1 MAX1865T R13 100k OUT 1 POK FB 3

SANYO 1000uF 16V CA

Abstract: SANYO 220uF 16V 220UF 16V 220uF 16V Electrolytic Capacitor 220uf 16v capacitor 150pf ceramic capacitor 220uF/16v electrolytic capacitor 0401 transistor 47uf, 16v electrolytic capacitor 6930A
Contextual Info: WLL Terminal C4 1uF 10V 24V INPUT C3 4.7uF 35V 13 R1 130k C1 22nF 2 C6 220uF 35V CA D1 CMPSH-3 20 VP ILIM 19 VL BST COMP DH 17 16 C2 220pF C7 4.7uF 35V T1 1:1:2 Lpri = 22.8uH VP2-0116 18 LX C5 0.1uF N1A 1/2 NDS 6930A R3 4.7 11,12 DL VL GND U1 MAX1865T R2 100k

ICS81006AKI

Abstract: ICS81006AKILF ICS81006AKILFT ICS81006AKIT ICS81006I MO-220
Contextual Info: ICS81006I Integrated Circuit Systems, Inc. VCXO-TO-6 LVCMOS OUTPUTS GENERAL DESCRIPTION FEATURES The ICS81006I is a high performance, low jitter/low phase noise VCXO and is a HiPerClockS member of the HiPerClockS™ family of high performance clock solutions from ICS. The

ICS81006AKI

Abstract: ICS81006AKILF ICS81006AKILFT ICS81006AKIT ICS81006I MO-220 crystal 11.325 mHz
Contextual Info: ICS81006I VCXO-TO-LVCMOS OUTPUTS GENERAL DESCRIPTION FEATURES The ICS81006I is a high performance, low jitter/ ICS low phase noise VCXO and is a member of the HiPerClockS HiPerClockS™ family of high performance clock solutions from IDT. The ICS81006I works in

ferroxcube bobbin

Abstract: DPA425R DPA426R EFD20 bobbin with 12 pin EFD25-3F3 DI-53 LM431AIM3X transformer mosfet gate drive circuit transformer bobbin 4 pin BAV19WS
Contextual Info: Design Idea DI-53 DPA-Switch 50 W DC-DC Dual Output Converter Application Device Power Output Input Voltage Output Voltage Topology Telecom DPA425R 50 W 36-75 VDC 5 V & 3.3 V Forward Sync. Rect. recirculate the transformer leakage energy during normal

SiC POWER MOSFET

Abstract: sic MOSFET APTMC60TLM14CAG
Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

1n0K 63

Abstract: 2012TYPE
Contextual Info: CERAMIC CHIP INDUCTORS •OPERATION TEMP. -25~+85℃ Including self-generated heat ■FEATURES ABCO chip inductor is wire wound type ceramic inductor. And our product provide high Q value. So ABCO chip inductor can be SRF(self resonant frequency)industry.

1310 sony

Contextual Info: SONY CORP/COMPONENT PRODS SOE D 0302303 00030^5 7 • CXB1132Q/Q-Y SO N Y. b - o <? - e>5 ~ 9, 8, Dual 4-bit Universal Shift Register Description Pin Assignm ent The C X B 1 1 3 2 Q is an ultra high speed monolithic Universal Shift Register with variable bit length.

SN74AS877

Contextual Info: SN54AS877, SN74AS877 8-BIT UNIVERSAL TRANSCEIVER PORT CONTROLLERS D2661, DECEMBER 1982 - REVISED AUGUST 1985 TOP VIEW 24 Buffered 3-State Outputs Drive Bus Lines Directly • Cascaded to n-Bits • Eight Selectable Transceiver/Port Functions: A to B or B to A

Contextual Info: SENSITRON SEMICONDUCTOR 2N7334 TECHNICAL DATA DATA SHEET 691, REV. - HERMETIC POWER MOSFET N-CHANNEL QUAD DESCRIPTION: 100 VOLT, 1.0 AMP, 0.70 OHM MOSFET IN A HERMETIC CERAMIC 14 PIN DIP. MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT

Contextual Info: SENSITRON SEMICONDUCTOR 2N7336 TECHNICAL DATA DATA SHEET 692, REV. - HERMETIC POWER MOSFET COMBINATION N-CHANNEL / P-CHANNEL QUAD 2 EACH DESCRIPTION: 100 VOLT, 1.0 AMP, 0.70 OHM MOSFET IN A HERMETIC CERAMIC 14 PIN DIP. MAXIMUM RATINGS-N/P - CHANNEL RATING

ICS81006AKI

Abstract: ICS81006I MO-220 crystal 11.325 mHz
Contextual Info: ICS81006I VCXO-TO-LVCMOS OUTPUTS GENERAL DESCRIPTION FEATURES The ICS81006I is a high performance, low jitter/ ICS low phase noise VCXO and is a member of the HiPerClockS HiPerClockS™ family of high performance clock solutions from IDT. The ICS81006I works in

EFD25-3F3

Abstract: LM431AIM3X ferroxcube bobbin design of line frequency inductor and transformer PI-3562-061603 es1d taiwan 7r20
Contextual Info: Design Idea DI-53 DPA-Switch 50 W DC-DC Dual Output Converter Application Device Power Output Input Voltage Output Voltage Topology Telecom DPA425R 50 W 36-72 VDC 5 V & 3.3 V Forward Sync. Rect. recirculate the transformer leakage energy during normal