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    PW03870796 Search Results

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    MG75Q2YS11

    Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG75Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input im pedance • High speed: tf = 1 .0[is Max. • Low saturation: V CE tn- = 0.5 n s (Max.)


    OCR Scan     		MG75Q2YS11 PW03870796 MG75Q2YS11 PDF

    MG75Q2YS11

    Abstract: MG75Q2YS1 251C MG-7
    Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG75Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 1.0[is Max. t,. = 0.5ns (Max.)


    OCR Scan     		MG75Q2YS11 PW03870796 MG75Q2YS11 MG75Q2YS1 251C MG-7 PDF