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DIODE i2t Abstract: MG15Q6ES42 Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG15Q6ES42 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.5µs Max. trr = 0.5µs (Max.)	Original	MG15Q6ES42 PW03770796 DIODE i2t MG15Q6ES42	PDF

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DIODE i2t

Abstract: MG15Q6ES42
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG15Q6ES42 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.5µs Max. trr = 0.5µs (Max.)

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MG15Q6ES42 PW03770796 DIODE i2t MG15Q6ES42

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