PUSH PULL CLASS AB RF LINEAR L BAND Search Results

Contextual Info: , Lf nc, l C7 TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. SD1489 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY

Contextual Info: S C S -T H O M S O N S D 1456 T C C 3100 5 7 . RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST

bd139 equivalent

Abstract: BLV862 ATC180R philips power transistor bd139 transistor DK ql AN98014 blv861 linear handbook MGM734 860mhz rf amplifier circuit diagram
Contextual Info: APPLICATION NOTE A Broadband 100 W Push Pull Amplifier for Band IV & V TV Transmitters based on the BLV861 AN98033 Philips Semiconductors A Broadband 100 W Push Pull Amplifier for Band IV & V TV Transmitters based on the BLV861 CONTENTS 1 INTRODUCTION 2 TRANSISTOR DESCRIPTION

SD4100

Abstract: push pull class AB RF linear L band
Contextual Info: SD4100 RF POWER TRANSISTORS UHF TV/LINEAR APPLICATIONS • 470 - 860 MHz • 28 VOLTS • CLASS AB PUSH PULL • DESIGNED FOR HIGH POWER LINEAR OPERATION • HIGH SATURATED POWER CAPABILITY • INTERNAL INPUT/OUTPUT MATCHING NETWORKS PROVIDE HIGH BALANCED

SD1476

Abstract: 1uF 63V LCC7950 resistor 1W
Contextual Info: SD1476 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 55 - 88 MHz 32 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB PUSH PULL HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR

Contextual Info: / 3 T ^ S G S -T H O M S O N 7 # . MD g[S(o ilL[l(gra R!l[l(gi S D 4100 t H I IK I DEVE10 PU ENI I I I ! SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change

SD1489

Abstract: airtronic ATC 100A
Contextual Info: SD1489 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION

Contextual Info: S G * S 'I H O M S O N SD1476 jï RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS • 55 - 88 MHz . 32 VOLTS . COMMON EMITTER i GOLD METALLIZATION . INTERNAL INPUT MATCHING . CLASS AB PUSH PULL . HIGH SATURATED POWER CAPABILITY - DIFFUSED EMITTER BALLAST

Contextual Info: S G S -1 H 0 M S 0 N iig T G M O ig i 5 7 . S D 1489 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS > . . • . . . . . > 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION

5q 1265 rf

Abstract: DIODE aay 49
Contextual Info: SGS-THOMSON 5 7 . SD1492 m RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS • ■ i ■ ■ . ■ . ■ 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION

MD7IC2755N

Abstract: atc600s0r5bt250xt ATC600S6R8BT250XT ATC600S0R GSC356 J851
Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7IC2755N Rev. 1, 7/2009 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated circuit is designed with on - chip matching that makes it usable from 2500 - 2700 MHz. This multi - stage

TRANSISTOR MOTOROLA MAC 223

Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
Contextual Info: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),

Granberg

Abstract: PUSH PULL MOSFET DRIVER watts AN-860 FET small signal transistors motorola mosfet class d MC10198 all mosfet vhf power amplifier 300 watt mosfet amplifier class AB all mosfet vhf power amplifier narrow band 150 watt amplifier advantages and disadvantages
Contextual Info: AN-860 Application Note POWER MOSFETs versus BIPOLAR TRANSISTORS By Helge 0 . Granberg Sr. Staff Engineer Motorola Semiconductor Products, Inc. W hat is better, if anything, with the power FETs if we can get a bipolar tran sisto r w ith an equal power rating for less th an half the price?

nippon capacitors

Abstract: 100B270JP500X 5 L 0380 R
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9210 Rev. 4, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

circuit diagram of GSM based home automation system

Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Contextual Info: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

PAL 007 pioneer mosfet

Abstract: PAL 007 pioneer pioneer PAL 007 A AIAG PPAP MANUAL SOT23-5 i2c based pwm generator pioneer car dvd service manual mosfet pal 007 pioneer PPAP MANUAL aiag SMD Code 12W SOT23 TSOP-20 FOOTPRINT
Contextual Info: Automotive Solutions Selection Guide 2008 Vol. 2 Automotive Solutions Overview .2 Automotive-Grade Products and Quality Program .3 Automotive Applications . 4-9 Infotainment and GPS. 5-6

nippon capacitors

Abstract: 2508051107Y0 3A412 MRF9210R3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9210/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9210R3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with

MRF9210

Abstract: DS0978 nippon capacitors 2508051107Y0 3A412 180R8R2JW500X 100B4R3 100B270JP500X
Contextual Info: MOTOROLA Order this document by MRF9210/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9210 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

nippon capacitors

Contextual Info: Freescale Semiconductor Technical Data MRF9210 Rev. 2, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

MOTOROLA SCR 1725

Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
Contextual Info: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1

2a258 transistor

Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Contextual Info: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

Contextual Info: POWER RF MOSFET TRANSISTORS POLYFET RF DEVICES 1. Basic Considerations 1.1. Use a Printed Circuit Board - In most cases superior and more repeatable performance can be obtained using a printed circuit board with stripline inductors. It is also easier to maintain a good ground plane around the transistor.

ilhi10

Abstract: Application Hint 40d data sheet for 3 input xor gate INFINEON XC161CJ C166 C166SV2 J1850 SAK-XC161CJ-16F20F SAK-XC161CJ-16F40F XC161
Contextual Info: D a ta S h e e t, V 2 . 3 , M a r c h 20 0 6 XC161CJ-16F 16-Bit Single-Chip Microcontroller with C166SV2 Core Microcontrollers Edition 2006-03 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2006. All Rights Reserved.

smd transistor marking A7 p7

Abstract: transistor MARKING CODE 24D C166 J1850 SAF-XC161CJ-16F20F SAF-XC161CJ-16F40F SAK-XC161CJ-16F20F SAK-XC161CJ-16F40F XC161 XC166
Contextual Info: Da ta S h ee t, V 2. 2, J un . 20 03 X C 1 61 C J 1 6 - B i t S i n g l e - C h i p M i c r o c o n t r o l le r M i c ro c o n t ro l l e rs N e v e r s t o p t h i n k i n g . Edition 2003-06 Published by Infineon Technologies AG, St.-Martin-Strasse 53,