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Contextual Info: LNX998CKBDA Round Type φ3.0 mm • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color Symbol Rating Unit Power dissipation PD 120 mW Forward current IF 30 mA Pulse forward current * IFP 100 mA Reverse voltage VR 5 V Operating ambient temperature

Contextual Info: LNJ03004GLD1 Surface Mounting Chip LED 3230 Type • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Power dissipation PD 860 mW Forward current IF 120 mA Pulse forward current *1 IFP 200 mA Junction temperature *2 Tj 110 °C Operating ambient temperature

tl3842p application circuit

Abstract: tl3842p uc3842 TL3842P application note TL3842 TL3842PE4 TL3842P circuit TL3845 dc dc applications
Contextual Info: TL284x, TL384x CURRENT-MODE PWM CONTROLLERS SLVS038F – JANUARY 1989 – REVISED FEBRUARY 2003 D D D D D D D D D D D D Optimized for Off-Line and dc-to-dc Converters Low Start-Up Current <1 mA Automatic Feed-Forward Compensation Pulse-by-Pulse Current Limiting

Contextual Info: SK24A - SK215A 2.0 Amp. Surface Mount Schottky Barrier Rectifier Current 2.0 A Voltage 40 V to 150 V DO-214AC / SMA FEATURES • Low profile package • Ideal for automated placement • Low power losses, high efficiency • High surge current capability • Guarding for overvoltage protection

STPS20

Contextual Info: STPS20SM60C Power Schottky rectifier Features • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A1 K A2 K K A2 A2 Description A1 The STPS20SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode

FSS14

Contextual Info: FSS12L.FSS115L 1.0 Amp. Surface Mount Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 150 V DO-219AA M1F FEATURES • Low profile package • Ideal for automated placement • Low power losses, high efficiency • High surge current capability

Contextual Info: MBR2035PT thru MBR20200PT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: IGBT MODULE N series n Features • • • • n Outline Drawing Including Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( 4 ~ 5 Times Rated Current ) n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25°C) Items

Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current)

Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Overcurrent Limiting Function (~3 Times Rated Current) n Maximum Ratings and Characteristics n Equivalent Circuit • Absolute Maximum Ratings Items Collector-Emitter Voltage

Contextual Info: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES • Low profile package • Ideal for automated placement • Low leakage current • High surge current and zener capability • Low differential resistance

b40 550

Abstract: N301U b40 5000 R305UR
Contextual Info: 301U R Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 300 A FEATURES • Wide current range RoHS • High voltage rating up to 2500 V COMPLIANT • High surge current capabilities • Stud cathode and stud anode version • High resistance to acceleration

Schottky

Contextual Info: SR4020PT thru SR40100PT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current)

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3357 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3357 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3357 TO-3P designed for high current switching applications.

Contextual Info: B330LA, B340A www.vishay.com Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

Liteon tl-130

Abstract: liteon TL130 TL130 tl-130 mur120
Contextual Info: LITE-ON SEMICONDUCTOR SUPER FAST GLASS PASSIVATED RECTIFIERS MUR120 REVERSE VOLTAGE - 200 Volts FORWARD CURRENT - 1.0 Ampere DO-41 FEATURES Glass passivated chip Super fast switching time for high efficiency Low forward voltage drop and high current capability

Contextual Info: LITE-ON SEMICONDUCTOR D1G thru D7G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Amperes MINIATURE GLASS PASSIVATED RECTIFIERS T-1 FEATURES Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability Plastic material has UL flammability classification 94V-0

1N4933L

Abstract: 1N4934L 1N4935L 1N4936L 1N4937L A-405
Contextual Info: LITE-ON SEMICONDUCTOR 1N4933L thru 1N4937L REVERSE VOLTAGE - 50 to 600 Volts FORWARD CURRENT - 1.0 Ampere FAST RECOVERY RECTIFIERS A-405 FEATURES Fast switching for high efficiency Low cost Diffused junction Low reverse leakage current Low forward voltage drop

Contextual Info: SK20H45 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - For use as Bypass diode in Solar application.

20KHZ

Abstract: SBR8100 SBR820
Contextual Info: CURRENT 8.0Amperes VOLTAGE 20 to 100 Volts SBR820 THRU SBR8100 Features • Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 · Metal silicon junction, majority carrier conduction · Guard ring for overvoltage protection · Low power loss, high efficiency

Contextual Info: 2SK2896-01L,S N-channel MOS-FET FAP-IIIB Series 60V > Features - 12mΩ ±45A 60W Max. Unit V V µA mA nA mΩ mΩ S pF pF pF ns ns ns ns A V ns µC > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated

2045CT

Abstract: SBG2030CT SBG2035CT SBG2040CT SBG2045CT
Contextual Info: LITE-ON SEMICONDUCTOR SBG2030CT thru 2045CT REVERSE VOLTAGE - 30 to 45 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS FEATURES D 2 PAK Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

SBG1025L

Abstract: SBG1030L KTHB11
Contextual Info: LITE-ON SEMICONDUCTOR SBG1025L thru SBG1030L REVERSE VOLTAGE - 25 to 30 Volts FORWARD CURRENT - 10 Amperes SCHOTTKY BARRIER RECTIFIERS FEATURES D 2 PAK Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency