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NE662M03

Abstract: k 2545 NE662M03-T1
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR NE662M03 NPN SILICON RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and high-frequency oscillation NF = 1.2 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid