PTFA211001E Search Results
PTFA211001E Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| PTFA211001E |
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2100 MHz to 2200 MHz; Package: PG:H-30248-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,110.0 - 2,170.0 MHz; P1dB (typ): 100.0 W; Supply Voltage: 28.0 V; | Original | 216.91KB | 9 |
PTFA211001E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
200B
Abstract: BCP56 LM7805 PTFA211001E infineon gold P2KECT-ND
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Original |
PTFA211001E PTFA211001E 100-watt, H-30248-2 200B BCP56 LM7805 infineon gold P2KECT-ND | |
d 417 transistorContextual Info: PTFA211001E PTFA211001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 2110 – 2170 MHz Description The PTFA211001E and PTFA211001F are thermally-enhanced, 100-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier |
Original |
PTFA211001E PTFA211001F 100-watt, PTFA211001F* d 417 transistor | |
PTFA211001EContextual Info: Product Brief PTFA211001E PTFA211001F WCDMA RF Power FET The PTFA211001E and PTFA211001F Performance Two devices from our next generation of GOLDMOS devices, these high-gain devices bring rugged quality to your amplifier designs. Specifically optimized for WCDMA applications, the PTFA211001E and |
Original |
PTFA211001E PTFA211001F PTFA211001E PTFA211001F B134-H8498-X-0-7600 | |
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Contextual Info: Preliminary PTFA211001E PTFA211001F Thermally Enhanced High Power RF LDMOS FETs 100 W, 2110–2170 MHz Description Features The PTFA211001E and PTFA211001F are thermally enhanced an internally matched 100-watt GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally enhanced packaging |
Original |
PTFA211001E PTFA211001F 100-watt |