PT 4207 Search Results

T4148

Abstract: TIC 160 D sm 4109 TIC 160 M T-41410 TIC+160+M
Contextual Info: What H EW LETT 1 "KM PA CK A R D Silicon Bipolar Transistors Selection Guide NF0 and Ga are specified at a low noise bias point, while Pt dB, Gj dB, and IS2lEl- are specified at bias points which optimize these parameters. Low N oise Transistors Typical Specifications @ 25°C Case Temperature

TA8510

Abstract: Ta-8510 SAO1 photo thyristor E67349 TLP611J TA225 tlp611
Contextual Info: TT TOSHIBA {DI SC RE TE /O PT O} DE ^ T0T7BS0 QD174ÛD 1 | 99D 17480 9097250 TOSHIBA <DISCRETE/OPTO D T-W-Z 7 T L P 6 I I J GaAs IR ED & P H O TO -TH Y R IS TO R The TOSHIBA TLP611J consists of a photo­ thyristor connected inverse parallel optically coupled to a gallium arsenide infrared emitt­

SN55150

Contextual Info: TEXAS INSTR Ì L I N / I N T F O f i ^ 17E4 q 07S431 fl | - 8961 724 TEXAS INSTR CLIN/INTFC 91D 75431 SN55150, SN75150 DUAL LINE DRIVERS D9 51 , J A N U A R Y 1 9 7 1 - R E V IS E D SE PT E M B ER 1 9 86 . S N 5515 0 . . . JG PACKAGE S N 7615 0 . . . D. JG. OR P PACKAGE

AT42070

Abstract: oscillator 77 GHZ Avantek amplifier Avantek power amplifier AT-42070 T-31-21 AVANTEK oscillator
Contextual Info: AVANTEK INC SGE D • im n b b DGDbMTa S AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor * Features Avantek 70 mil Package • .uqu • • • • High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical PidB at 4.0 GHz High Gain at 1 dB Compression:

Contextual Info: MICROPAC INDUSTRIES INC 30 deTJ biiamo ooooatiti a /77/f T -58-11-13 725 E, Walnut Street Garland, Texas 75040 214 272-3571 TWX 910-860-5186 MICROPAC INDUSTRIES, INC. P R E LIM IN A R Y MIVR 42079 1.5A FIXED THREE TERMINAL NEGATIVE REGULATORS Screened to Mil. Std. 883B.

Contextual Info: NICROPAC INDUS T R I E S INC 3D d!T| bll,3L4D DDDDatM T f T-58-11-13 725 E. Walnut Street Garland, Texas 75040 214 272-3571 TWX 910-860-5186 797// MICROPAC INDUSTRIES, INC. P R E LIM IN A R Y MIVR 42078 1.5A FIXED THREE TERMINAL POSITIVE REGULATORS Screened to Mil. Std. 883B

Contextual Info: NICROPAC INDUSTRIES INC 3D DeT| fc. 1 1 5 b 4 D □□□Ü2b4 T mu f~ T-58-11-13 725 E. W alnut Street G arland, Texas 75040 214 272-3571 TWX 910-860-5186 MICROPAC INDUSTRIES, INC. P R E LIM IN A R Y MIVR 42078 1.5A FIXED THREE TERMINAL POSITIVE REGULATORS

Contextual Info: MICROPAC IND US TRIE S INC 30 DË bUSt^D □□□Q2bb 2 mu T -58-11-13 725 E, Walnut Street Garland, Texas 75040 214)272-3571 TWX 910-860-5186 MICROPAC INDUSTRIES, INC. PRELIMINARY M IV R 42079 1.5A FIXED THREE TER M IN A L NEG ATIVE REGULATORS Screened to Mil. Std. 883B.

Contextual Info: AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Who IHEWLETT ft "HM PACKARD 70 mil Package Features • • • • • ,040 1.02 High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz High Gain at 1 dB Compression:

Contextual Info: W hat HEWLETT« mLMÆ PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical Pj dB at 2.0 GHz 20.5 dBm Typical Pi ¿b at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical Gi ^ at 2.0 GHz

Contextual Info: AVANTEK Q a v aüE D INC a n t e • i i m i h t 0001=4^2 s AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor * k ' Features Avantek 70 mi! Package • High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz • High Gain at 1 dB Compression:

AT42070

Abstract: AT-42070 S21E
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz

Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4.0␣ GHz

AT42070

Abstract: transistor C200 AT-42070 S21E
Contextual Info: AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42070 is a general purpose NPN bipolar transistor that offers excellent high ­frequency performance. The AT‑42070 is housed in a hermetic, high reliability goldceramic 70 mil microstrip package. The 4 micron emitterto-emitter pitch enables this transistor to be used in many

AT-42070

Abstract: S21E AT42070
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4.0␣ GHz

Contextual Info: What 1"UM HEW LETT PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Tfechnical Data AT-42070 Features different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium

AT-42070

Contextual Info: Agilent AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz Description Agilent’s AT-42070 is a general purpose NPN bipolar transistor that

NAS-938

Abstract: 180-018a NAS bolts torque chart dynamometer AP1001 410403 torque sensor rotary transformer 8311-17-10A hall sensor 6pin
Contextual Info: - Torque Sensors Torque sensors manufactured by PCB fall into two categories of measurement: reaction torque and rotational torque. Both styles utilize strain gages, which are configured into a Wheatstone bridge circuit, as their primary sensing element. Accuracies are typically

diode in58

Abstract: OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908
Contextual Info: Interface Technology and Switching Devices 2013 / 2014 7 PCB connection technology and electronics housing • PCB terminal blocks and plug-in connectors • Electronics housing Connection technology for field devices • Plug-in connectors • Cables and connectors

psd4xx

Abstract: PSDsoft object file tutorial major project report of eprom programmer PSD503B1 16MHZ AD0-AD15 psd5xx
Contextual Info: Programmable Peripheral Application Note 031 PSD4XX/5XX Design Tutorial Introduction This tutorial takes you step by step through the development cycle of a PSD4XX/5XX based design, from design entry to programming the device. A simple design example is used to demonstrate how some of the key functions in the PSD4XX/5XX are utilized.

WG12864A

Abstract: 7028 SMD Transistor wh1604 WH1602B 94V0 200108 TRANSISTOR SMD MARKING CODE NM cree 3535 WH1602L WG24064A Kingbright 55-0197
Contextual Info: Optoelectronics New products SMD LEDs White 3528 Series High Power SMD LEDs White 3535 37E Series From £0.05 See page 604 Page 599 From £0.64 12V LED Strips, 4.8W per metre 12V LED Strips, 4.8W per metre Warm white See page 610 Cool white See page 610 From

PT 4207

Contextual Info: AmPAL*HC29M16/AmPALHCT29M16 24-Pin E2-Based CMOS Programmable Array Logic ADVANCE INFORMATION • • • • High-performance semi-custom logic replacement; Electrically Erasable E2 technology allows repro­ grammability 16 bidirectional user-programmable I/O logic macro­

4207 photo diode

Abstract: D 4206 TRANSISTOR PT 4207
Contextual Info: m H A R R IS S E M I C O N D U C T O R FRM9250D, FRM9250R, FRM9250H 16A, -200V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 16A, -200V, RDS on = 0.300» TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

SP-0770

Abstract: PT 4207 MCP-0101-5-12 EJ34 HNCP10 DSP-0770
Contextual Info: HEXADECIMAL AND NUMERIC DISPLAYS FOR INDUSTRIAL APPLICATIONS HIGH EFFICIENCY RED LOW Power High Brightness YELLOW GREEN HDSP-0760/0761/0762/0763 HDSP-0770/0771/0772/077J HDSP-0860/0861 /0862/0863 HDSP-0960/0961 /0962/0963 Features • TH R E E CO LO R S H igh-Efficiency Red