PT 40 01 Search Results

HMC258

Contextual Info: MICROWAVE CORPORATION HMC258 v01.0801 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 14 - 21 GHz Typical Applications Features The HMC258 is ideal for: Integrated LO Amplifier: 0dBm Drive • Microwave Pt to Pt Radios Sub-Harmonically Pumped x2 LO • VSAT High 2LO/RF Isolation: 40 dB

HMC158

Contextual Info: MICROWAVE CORPORATION HMC158 v03.0304 GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 1.3 - 4.0 GHz INPUT Typical Applications Features The HMC158 is suitable for: Conversion Loss: 15 dB • Wireless Local Loop Fo, 3Fo, 4Fo Isolation: 40 dB • LMDS, VSAT, and Pt to Pt Radios

HMC294

Contextual Info: HMC294 v01.0300 MICROWAVE CORPORATION GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz Typical Applications Features The HMC294 is ideal for: Input IP3: +20 dBm • Microwave Pt to Pt Radios LO / RF Isolation: 27 dB • LMDS Passive: No DC Bias Required • SATCOM

HMC187MS8

Contextual Info: HMC187MS8 v03.0502 MICROWAVE CORPORATION GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 0.85 - 2.0 GHz INPUT Typical Applications Features The HMC187MS8 is suitable for: Conversion Loss: 15 dB • Wireless Local Loop Fo, 3Fo, 4Fo Isolation: 40 dB • LMDS, VSAT, and Pt to Pt Radios

HMC204C8

Contextual Info: HMC204C8 v03.1103 MICROWAVE CORPORATION GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 4 - 8 GHz INPUT Typical Applications Features The HMC204C8 is suitable for: Conversion Loss: 16 dB • Wireless Local Loop Fo, 3Fo, 4Fo Isolation: 40 dB • LMDS, VSAT, and Pt to Pt Radios

Contextual Info: REVISION AK C PACKAGE PARTS IN TUBES AS SHOWN PT— 1— 24— 07— 63 LEAD STYLE -01 -0 2 -0 2 -0 2 -0 1 , -0 2 PROPRIETARY NOTE OPTIONS POS PER ROW TUBE 'JONE.-LC SEE NOTE 8 05 THRU 40 PT-1- 2 4 - 0 2 - 1 6 NONE (SEE NOTE 9) - K , -LC . -K -L C - P , -P -L C

Contextual Info: CD 110 PT Series 3 000 - 4 000h at 85°C longer life • Standard 85°C CD 263 BK CD 287 GC lower ESR 105°C CD 110 PT Item Characteristics Operating Temperature Range °C -40 ~ +85 Voltage Range (V) 6,3 ~ 450 Capacitance Range (µF) 0,1 ~ 22 000 Capacitance Tolerance (20°C, 120Hz)

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBTs VCES = 600V IC90 = 320A VCE sat ≤ 1.6V IXGK320N60B3 IXGX320N60B3 Medium-Speed Low-Vsat PT IGBTs for 5-40 kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600

IXGA30N60C3C1

Abstract: IXGH30N60C3C1 IXGP30N60C3C1 30N60C3
Contextual Info: IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings

2N1486

Abstract: 2n1485 2N1484 2N1483 jtx2n1486
Contextual Info: TECHNICAL DATA 2N1483 JAN, JTX 2N1484 JAN, JTX 2N1485 JAN, JTX 2N1486 JAN, JTX MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/180 NPN SILICON MEDIUM-POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N1483 2N1485 2N1484 2N1486 Units VCEO VCBO VEBO IC PT 40

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGH48N60B3C1 = = ≤ = 600V 48A 1.8V 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C

g60n

Abstract: 60N60C
Contextual Info: GenX3TM 600V IGBT w/ Diode IXGR60N60C3D1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100 kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR

Contextual Info: Advance Technical Information GenX3TM 600V IGBT VCES = IC110 = VCE sat ≤ IXGH56N60B3 600V 56A 1.80V Medium-Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXGH56N60B3

Abstract: 5-05-08-B IXYS Corporation
Contextual Info: Advance Technical Information IXGH56N60B3 GenX3TM 600V IGBT VCES = IC110 = VCE sat ≤ 600V 56A 1.80V Medium-Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: GenX3TM 600V IGBT VCES IC110 VCE sat tfi (typ) IXGH72N60C3 High-Speed PT IGBT for 40-100kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES Continuous ±20 V VGEM Transient

IXGH72N60C3

Contextual Info: GenX3TM 600V IGBT IXGH72N60C3 VCES IC110 VCE sat tfi (typ) High-Speed PT IGBT for 40-100kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES Continuous ±20 V VGEM Transient

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT IXGH60N60C3 VCES IC110 VCE sat tfi (typ) High Speed PT IGBTs for 40-100kHz switching = = ≤ = 600V 60A 2.5V 55ns TO-247 AD (IXGH) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXGH60N60C3D1

Abstract: G60N60 g60n 01-15-10-E IXGT60N60C3D1 IF110 ixgh60
Contextual Info: GenX3TM 600V IGBTs with Diode IXGH60N60C3D1 IXGT60N60C3D1 VCES IC110 VCE sat tfi (typ) High Speed PT IGBTs for 40-100kHz switching = = ≤ = 600V 60A 2.5V 50ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

temperature sensor Landis Ni 1000

Abstract: DIN EN 60751 PT-1000 sensor 2750138 PT-1000 sensor range Pt 1000 sensor 5080C F830 FC18 NI-100 RTD DIN
Contextual Info: IB ST ZF 24 PT 100 4/4 Analog Input Module with 4 Channels for the Connection of Resistance Temperature Detectors (RTDs) 5080C000 Data Sheet 5080C 01/2000 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 F E

ixgh48n60c3d1

Abstract: IXYS IXGH48N60C3D1 48N60C3D1 48N60 ixgh48n60c3d
Contextual Info: GenX3TM 600V IGBT with Diode VCES IC25 VCE sat tfi(typ) IXGH48N60C3D1 High speed PT IGBTs for 40-100kHz Switching = = ≤ = 600V 75A 2.5V 38ns TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ

ixgh60n60c3

Abstract: G60N60
Contextual Info: IXGH60N60C3 GenX3TM 600V IGBT VCES IC110 VCE sat tfi (typ) High Speed PT IGBT for 40-100kHz Switching = = ≤ = 600V 60A 2.5V 50ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings 600 600 V V

IXGA30N60C3

Abstract: IXGH30N60C3 IXGP30N60C3 30N60C3 G30N60C3
Contextual Info: IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 GenX3TM 600V IGBTs VCES = IC110 = VCE sat ≤ tfi(typ) = High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

ixgh30n60c3d1

Abstract: 600v 30A fast recovery diode g30n60c3 Tvj-150 30N60C3
Contextual Info: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBTs w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: GenX3TM B3-Class IGBTs VCES IC110 VCE sat tfi(typ) IXGH72N60B3 IXGT72N60B3 Medium Speed low Vsat PT IGBTs 5-40 kHz Switching = = ≤£ = 600V 72A 1.80V 90ns TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ