PT 40 01 Search Results

Contextual Info: REVISION AR PT—1—24—0 3 - 16 p r—1 - 2 4 - 0 7 —63 — u — r LEAD STYLE -01 -0 2 -0 2 -0 2 -0 1 , - 0 2 \ — \\ . 1 Ifi'll-i PT—1—24—02—16 t \ OPTIONS POS PER ROW TUBE PLUG PT—1—24—02—16 T P -2 4 40NE.-LC (SEE NOTE 8) 05 THRU 40

HMC258

Contextual Info: MICROWAVE CORPORATION HMC258 v01.0801 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 14 - 21 GHz Typical Applications Features The HMC258 is ideal for: Integrated LO Amplifier: 0dBm Drive • Microwave Pt to Pt Radios Sub-Harmonically Pumped x2 LO • VSAT High 2LO/RF Isolation: 40 dB

HMC158

Contextual Info: MICROWAVE CORPORATION HMC158 v03.0304 GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 1.3 - 4.0 GHz INPUT Typical Applications Features The HMC158 is suitable for: Conversion Loss: 15 dB • Wireless Local Loop Fo, 3Fo, 4Fo Isolation: 40 dB • LMDS, VSAT, and Pt to Pt Radios

HMC294

Contextual Info: HMC294 v01.0300 MICROWAVE CORPORATION GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz Typical Applications Features The HMC294 is ideal for: Input IP3: +20 dBm • Microwave Pt to Pt Radios LO / RF Isolation: 27 dB • LMDS Passive: No DC Bias Required • SATCOM

HMC187MS8

Contextual Info: HMC187MS8 v03.0502 MICROWAVE CORPORATION GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 0.85 - 2.0 GHz INPUT Typical Applications Features The HMC187MS8 is suitable for: Conversion Loss: 15 dB • Wireless Local Loop Fo, 3Fo, 4Fo Isolation: 40 dB • LMDS, VSAT, and Pt to Pt Radios

HMC204C8

Contextual Info: HMC204C8 v03.1103 MICROWAVE CORPORATION GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 4 - 8 GHz INPUT Typical Applications Features The HMC204C8 is suitable for: Conversion Loss: 16 dB • Wireless Local Loop Fo, 3Fo, 4Fo Isolation: 40 dB • LMDS, VSAT, and Pt to Pt Radios

Contextual Info: REVISION AK C PACKAGE PARTS IN TUBES AS SHOWN PT— 1— 24— 07— 63 LEAD STYLE -01 -0 2 -0 2 -0 2 -0 1 , -0 2 PROPRIETARY NOTE OPTIONS POS PER ROW TUBE 'JONE.-LC SEE NOTE 8 05 THRU 40 PT-1- 2 4 - 0 2 - 1 6 NONE (SEE NOTE 9) - K , -LC . -K -L C - P , -P -L C

Contextual Info: CD 110 PT Series 3 000 - 4 000h at 85°C longer life • Standard 85°C CD 263 BK CD 287 GC lower ESR 105°C CD 110 PT Item Characteristics Operating Temperature Range °C -40 ~ +85 Voltage Range (V) 6,3 ~ 450 Capacitance Range (µF) 0,1 ~ 22 000 Capacitance Tolerance (20°C, 120Hz)

Contextual Info: SPT78 I 4 @ *PT SIGNAL PROCESSING TECHNOLOGIES 10-BIT, 40 MSPS, ECL OUTPUT A/D CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • • Monolithic 40 MSPS Converter On-Chip Track/Hold Bipolar ±2.0 V Analog Input 57 dB SNR @ 3.58 MHz Input

G60N60

Abstract: IF110 ISOPLUS247 IXGR60N60C3C1 I40-13 Ultra fast diode
Contextual Info: IXGR60N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBTs VCES = 600V IC90 = 320A VCE sat ≤ 1.6V IXGK320N60B3 IXGX320N60B3 Medium-Speed Low-Vsat PT IGBTs for 5-40 kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600

swiching 30A current source

Abstract: 48N60C3 ixgh48n60c3 IXGH 48n60c3
Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 48A 2.5V 38ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C

Contextual Info: GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings

IXGA30N60C3C1

Abstract: IXGH30N60C3C1 IXGP30N60C3C1 30N60C3
Contextual Info: IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings

2N1486

Abstract: 2n1485 2N1484 2N1483 jtx2n1486
Contextual Info: TECHNICAL DATA 2N1483 JAN, JTX 2N1484 JAN, JTX 2N1485 JAN, JTX 2N1486 JAN, JTX MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/180 NPN SILICON MEDIUM-POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N1483 2N1485 2N1484 2N1486 Units VCEO VCBO VEBO IC PT 40

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT with Diode VCES = 600V IC110 = 48A VCE sat ≤ 1.8V IXGH48N60B3D1 Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGH48N60B3C1 = = ≤ = 600V 48A 1.8V 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C

g60n

Abstract: 60N60C
Contextual Info: GenX3TM 600V IGBT w/ Diode IXGR60N60C3D1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100 kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR

74S132

Abstract: AD346 AD585 long range gold detector circuit diagram FL 14-12
Contextual Info: High Speed SUMMING PT AD346 Fast 2 .0 | a s Acquisition Tim e to ± 0 . 01 % Low Droop Rate: 0.5m V/m s Low Offset Low Glitch: < 4 0 m V Aperture Jitter: 40 Dps Extended Tem perature Range: -5 5 ° C to + 125°C internal Hold Capacitor HOLD TTL LOGIC REF REF OUT

Contextual Info: Advance Technical Information GenX3TM 600V IGBT VCES = IC110 = VCE sat ≤ IXGH56N60B3 600V 56A 1.80V Medium-Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXGH56N60B3

Abstract: 5-05-08-B IXYS Corporation
Contextual Info: Advance Technical Information IXGH56N60B3 GenX3TM 600V IGBT VCES = IC110 = VCE sat ≤ 600V 56A 1.80V Medium-Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

G60N60

Abstract: IXGR60N60C3D1 IF110 ISOPLUS247 g60n60c 01-15-10-E
Contextual Info: IXGR60N60C3D1 GenX3TM 600V IGBT w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) High Speed PT IGBT for 40-100 kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXGH48N60C3

Abstract: IXGA48N60C3 IXGP48N60C3 IXGI48N60C3 IXGH48N60 48n60 IXGP48N60 48N60C3 IXGH 48n60c3 IXGH48N60C
Contextual Info: GenX3TM 600V IGBTs IXGI48N60C3 IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 High-Speed PT IGBTs for 40-100kHz Switching VCES = IC110 = VCE sat ≤ tfi(typ) = Symbol Test Conditions VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous

Contextual Info: GenX3TM 600V IGBT VCES IC110 VCE sat tfi (typ) IXGH72N60C3 High-Speed PT IGBT for 40-100kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES Continuous ±20 V VGEM Transient