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    PSPICE MODEL Search Results

    PSPICE MODEL Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TPS6508700RSKR
    Texas Instruments PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 Visit Texas Instruments
    TPS6508700RSKT
    Texas Instruments PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 Visit Texas Instruments Buy

    PSPICE MODEL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    orcad schematic symbols library

    Abstract: 25u polar capacitor PSPICE Orcad TAJA106K010R TAJA106K016R TPSD107K010R0050 TPSV108K004R0035 120NQ045 CL10 SG1524B
    Contextual Info: TANTALUM AND NIOBIUM OXIDE DATA LIBRARIES FOR INSERTION INTO PSPICE SIMULATION SOFTWARE A KYOCERA GROUP COMPANY TANTALUM DIVISION Tantalum and Niobium Oxide Data library introduction AVX has developed equivalent circuits for tantalum and niobium oxide chip capacitors in PSpice library


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    Sharp amplifier SM30

    Abstract: Spice Model for TMOS Power MOSFETs NMOS depletion pspice model RFH75N05 datasheet Spice 2 computer models for hexfets RFH75N05 Hal Ronan AN9210 TRANSFORMER ERL 35 VDMOS DEVICE
    Contextual Info: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options TM October 1999 Abstract accepted by users, and the ease of parameter extraction should be demonstrated. An empirical sub-circuit was implemented in PSPICE and is presented. It accurately portrays the vertical DMOS power


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    -55oC 175oC. Sharp amplifier SM30 Spice Model for TMOS Power MOSFETs NMOS depletion pspice model RFH75N05 datasheet Spice 2 computer models for hexfets RFH75N05 Hal Ronan AN9210 TRANSFORMER ERL 35 VDMOS DEVICE PDF

    IRF630N

    Abstract: TO-220 1030 630N marking s2A N-Channel MOSFET 200v 52e3
    Contextual Info: IRF630N N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models


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    IRF630N O-220 100oC, IRF630N TO-220 1030 630N marking s2A N-Channel MOSFET 200v 52e3 PDF

    Contextual Info: J W S S em icon du cto r RFG45N06LE, RFP45N06LE, RF1S45N06LESM I Data Sheet April 1999 45A, 60V, 0.028 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs • 45A, 60V Formerly developmental type TA49177. • rDS ON = 0.028i2 • 2kV ESD Protected • Temperature Compensating PSPICE Model


    OCR Scan
    RFG45N06LE, RFP45N06LE, RF1S45N06LESM TA49177. 028i2 TB334 94e-4 94e-7) 70e-3 17e-5) PDF

    Contextual Info: HUF75831SK8 TM Data Sheet August 2000 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET File Number 4796.2 Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER


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    HUF75831SK8 MS-012AA PDF

    PS2501 optocoupler

    Abstract: LED pspice LED pspice model AN-3005 LED pspice datasheet pspice model pspice PS2501 PS2501-1 OPTOCOUPLER USED IN SIGNAL ISOLATOR
    Contextual Info: A p p l i c at i o n N o t e AN 3005 Modeling phototransistor optocouplers using PSPICE simulation software CTR vs If by Van N. Tran Sample A B C D Staff Applications Engineer, CEL Opto Semiconductors Typically, an optocoupler is an optically-coupled isolator that uses a GaAs LED as a light source and a bipolar


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    CA3046 bjt

    Abstract: CA3046 spice Pspice ca3086 CA3086 spice Harris CA3046 CA3046 CA3086 Harris CA3086 CA3046 NPN 0138E
    Contextual Info: CA3046, CA3086, CA3127 Transistor Array SPICE Models Semiconductor Application Note June 1997 MM9701 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086, and the CA3127 High Frequency NPN Transistor Arrays.


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    CA3046, CA3086, CA3127 MM9701 CA3086 100mV CA3046 bjt CA3046 spice Pspice ca3086 CA3086 spice Harris CA3046 CA3046 Harris CA3086 CA3046 NPN 0138E PDF

    15514

    Contextual Info: SiB410DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    SiB410DK AN609, 8029u 6830m 5384m 0019m 0110u 9058u 5505u 15514 PDF

    Contextual Info: Si4202DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    Si4202DY AN609, 2175m 2923m 2439m 3089u 1542m 7069m 8017m PDF

    14093

    Abstract: 75431
    Contextual Info: Si9945BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    Si9945BDY AN609, 3203u 3659m 8029m 3567u 2443m 3998m 0795m 14093 75431 PDF

    Contextual Info: SiA450DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    SiA450DJ AN609, 9999u 0841m 9107m 5440m 1720u 3046u 4369m PDF

    77503

    Contextual Info: Si5999EDU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    Si5999EDU AN609, 7690u 1847m 5265m 5610m 1835m 0133m 6339u 77503 PDF

    Contextual Info: SiR826DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    SiR826DP AN609, 6931m 8259m 0206m 8462m 3297m 8700m 1449m PDF

    Contextual Info: Si4004DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    Si4004DY AN609, 7091m 5039m 6331m 9944m 5460m 2019m 0747m PDF

    si1427

    Contextual Info: Si1427EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    Si1427EDH AN609, 3515u 1736m 9349m 1636u 2141m 9215u 1951m si1427 PDF

    AN609

    Abstract: Si7415DN 74284 application note
    Contextual Info: Si7415DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    Si7415DN AN609 03-Mar-06 74284 application note PDF

    Contextual Info: IRFZ44S_RC, IRFZ44L_RC, SiHFZ44S_RC, SiHFZ44LL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


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    IRFZ44S IRFZ44L SiHFZ44S SiHFZ44LL AN609, THERMAZ44S 9021m 9076m 0860m PDF

    Contextual Info: IRFP21N60L_RC, SiHFP21N60L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


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    IRFP21N60L SiHFP21N60L AN609, 07-Jun-10 PDF

    Contextual Info: IRFIBC40G_RC, SiHFIBC40G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


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    IRFIBC40G SiHFIBC40G AN609, 31-May-10 PDF

    Contextual Info: IRFD014_RC, SiHFD014_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    IRFD014 SiHFD014 AN609, CONFIGURA5-Oct-10 3009m 0416u 6348m 9120m PDF

    Contextual Info: IRLR024_RC, IRLU024_RC, SiHLR024_RC, SiHLU024_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


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    IRLR024 IRLU024 SiHLR024 SiHLU024 AN609, 9731m 2316m 0467m PDF

    Contextual Info: IRFZ48R_RC, SiHFZ48R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    IRFZ48R SiHFZ48R AN609, 6055m 9011m 2958m 1718m 3035m PDF

    TSS 6672-1

    Contextual Info: Si2319CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    Si2319CDS AN609, 26-May-10 TSS 6672-1 PDF

    Contextual Info: SiHFZ34S_RC, SiHFZ34L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    SiHFZ34S SiHFZ34L AN609, 4962m 9514m 4372m 1122m 6484m PDF