PSMN165-200K |
|
NXP Semiconductors
|
PSMN165-200K - N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 2.9 A; Qgd (typ): 12 nC; RDS(on): 165@10V mOhm; VDSmax: 200 V |
Original |
PDF
|
219.13KB |
12 |
PSMN165-200K |
|
Philips Semiconductors
|
N-channel enhancement mode field-effect transistor |
Original |
PDF
|
106.65KB |
13 |
PSMN165-200K,118 |
|
NXP Semiconductors
|
PSMN165-200K - N-channel TrenchMOS SiliconMAX standard level FET, SOT96-1 Package, Standard Marking, Reel Pack, SMD, 13" |
Original |
PDF
|
219.13KB |
12 |
PSMN165-200K,518 |
|
NXP Semiconductors
|
N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 2.9 A; Qgd (typ): 12 nC; RDS(on): 165@10V mOhm; VDSmax: 200 V; Package: SOT96-1 (SO8); Container: Reel Dry Pack, SMD, 13" |
Original |
PDF
|
106.64KB |
13 |
PSMN165-200K,518 |
|
NXP Semiconductors
|
PSMN165-200 - TRANSISTOR 2900 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Small Signal |
Original |
PDF
|
219.13KB |
12 |
PSMN165-200K518 |
|
NXP Semiconductors
|
SMALL SIGNAL N-CHANNEL MOSFET |
Original |
PDF
|
887.45KB |
|
PSMN165-200K/T3 |
|
NXP Semiconductors
|
N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 2.9 A; Qgd (typ): 12 nC; RDS(on): 165@10V mOhm; VDSmax: 200 V |
Original |
PDF
|
106.64KB |
13 |