PROTON UP Search Results

prisma

Abstract: smartcard visa SMARTCARD CEPS proton aspic e purse ISO7816 "electronic purse"
Contextual Info: Proton PRISMA Latest-generation smartcard solutions for banking, government and public transport www.st.com/smartcard Key benefits • Ideal for finance, government and public transport applications ■ Seamless migration to multi-application functionality

prisma

Abstract: proton EMV CARDS DDA quality control payment CARDS
Contextual Info: EMVPlus Credit/debit application on ST Proton PRISMA technology www.st.com/smartcard • Multi-brands ■ Extended risk management ■ SDA, DDA, CDA mechanisms ■ One-time password ■ Card-manufacturer independent ■ Simplified personalization ■ Future-proof

Contextual Info: Application Note 1938 Single Event Effects SEE Testing of the ISL71091SEHxx Precision Voltage References Family Introduction SEE Test Objectives The intense proton and heavy ion environment encountered in space applications can cause a variety of single event effects

vcsel spice model

Abstract: 1310nm led Modulating VCSELs 1310nm photodiode 6 Ghz 10Gbps TOcan
Contextual Info: APPLICATION NOTE Modulating Finisar Oxide VCSELs INTRODUCTION In the last decade, proton isolated VCSELs have become the industry standard for short wavelength 850nm gigabit data communications links on multimode fiber. As the speeds have increased beyond 2Gbps, however, the oxide isolated

proton up

Abstract: 4N48
Contextual Info: 66260 6 PIN GULL WING PROTON RADIATION TOLERANT OPTOCOUPLER OPTOELECTRONIC PRODUCTS DIVISION 12/23/2009 Features: Applications: • • • • • • • • • • High Reliability Base lead provided for conventional transistor biasing Rugged package Stability over wide temperature

Contextual Info: 66260 6 PIN GULL WING PROTON RADIATION TOLERANT OPTOCOUPLER OPTOELECTRONIC PRODUCTS DIVISION 05/31/2013 Features: Applications: •          High Reliability Base lead provided for conventional transistor biasing Rugged package Stability over wide temperature

Contextual Info: CYRS1542AV18 CYRS1544AV18 72-Mbit QDR II+ SRAM Two-Word Burst Architecture with RadStop Technology 72-Mbit QDR® II+ SRAM Two-Word Burst Architecture with RadStop™ Technology Radiation Performance Radiation Data • Total Dose =300 Krad ■ Soft error rate both Heavy Ion and proton

Contextual Info: CYRS1543AV18 CYRS1545AV18 72-Mbit QDR II+ SRAM Four-Word Burst Architecture with RadStop Technology 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture with RadStop™ Technology Radiation Performance Radiation Data • Total Dose =300 Krad ■ Soft error rate both Heavy Ion and proton

gemplus

Abstract: AT83C21GC SSOP24 emv 7816 smart card atmel tape and reel
Contextual Info: Features • Smart Card Interface • • • • – Compliance with Standards • ISO/IEC 7816-1, 2, 3 and 4 • EMV 2000 • CB • Mondex , Proton, ZKA, Other: Contact Gemplus® – Supported Smart Cards • Number of Smart Cards Supported: 1 • Asynchronous Cards: T=0 and T=1

TIBC

Abstract: advantis crypto smartcard visa TIBC 3.0 data access CEPS PKCS11 EMV CARDS DDA TIBC 3.0 implementation data access prisma carte moneo
Contextual Info: System-on-Chip solutions for finance Latest-generation smartcard solutions for banking STMicroelectronics is a world leader in the development and delivery of chip products and solutions for the banking sector. This is the result of over 20 years in the industry, delivering

MXPE-LN

Contextual Info: MXPE-LN 3/06/05 10:36 Page 1 MXPE-LN series Very High Extinction Ratio Lithium Niobate Intensity Modulators MXPE-LN series - Very High Extinction Ratio Lithium Niobate Intensity Modulators 1010011001 Ordering information MXPE-LN-W-XX-Y-Z-AB-CD W : 10 bandwidth >10 GHz

NIR-MPX-800-LN-10

Abstract: corning phase modulator RF50 port data NIR-MPX800
Contextual Info: NIR-MPX800 series 800 nm region Phase Modulators Modulator The NIR-MPX800 series are modulators especially designed to operate in the 800 nm wavelength region. They are available with various modulation bandwidth, from low frequency to 10 GHz and above. Features

laser 790 nm

Abstract: LiNbO3 phase modulator U25-A NIR-MPX800
Contextual Info: NIR-MPX800 800 nm Phase Modulator DESCRIPTION The NIR-LN modulators series is specially designed for operation in the Near InfraRed region; it offers to the engineers of emerging applications a choice of modulation devices comparable to what exists for the telecommunications and with bandwidths up to above

Contextual Info: S51216FVRH: 512K x 16-Bit Radiation-Tolerant Static RAM Product Feature Sheet Features • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300 krads Si • Prompt Dose: No burn out and latchup; Dose rate ranging from 1.0 E9 to 1.8

40 v 20 amp, diode

Abstract: 10131 ERA83-006 ERB83-006 ERC80M-006 ERC81 ERC81-006 MARK diode general semiconductor 2 amp 20 - 60v diode ERB83
Contextual Info: COLLHER SEMICONDUCTOR INC 4ÔE ]> • 25307^ ICOL □□□1723 TDÔ <s 60V S chottkys 1 Amp, 2 Amp, 3 Amp, 4 Amp S chottky Barrier Rectifiers General Description: The ERA83, ERB83, ERC81 and ERC80M Series of Schottky Barrier Rectifiers provides exceptional performance in econo­

TEK 467

Abstract: l35 CAPacitor EDLC avx bestcap TEK 7920
Contextual Info: TECHNICAL INFORMATION BESTCAP A NEW DIMENSION IN “FAST” SUPERCAPACITORS Scot Tripp AVX Ltd, Fleet, UK Tel: +44 0 1252 770043 Email: tripps@flt.avxeur.com Dr. Arieh Meitav ECR/AVX, Rehovot, Israel Tel: +972 8 940 7920 Email: arieh@ecr.co.il BESTCAP A NEW DIMENSION IN

7D30A-050EHR

Abstract: 7D50A-050EHR 7D75A-050EHR 7D150A-050EHR EXB841 6D20A-050EJR fuji darlington module 7d30a-050 fuji ipm 7d30a
Contextual Info: COLLIER SEMICONDUCTOR INC MflE 22307*15 00 015 7b 3ÖÜ J> ICOL Power Darlington Modules <S • EXB850 • EXBS40 900 VOLT IGBTs FOR RESONANT APPLICATIONS Device Type IMB50-090A MBT001 VCE8 Votts (min) 900 900 le Amps (min) 50 60 Rth (J-c) °C/Watts (max)

metal detector plans

Abstract: "electromagnetic pulse" DMILL van allen belt satellite neutron detector nuclear CMOS Process 3um signal path designer
Contextual Info: Introduction Higher performance, speed, power consumption and cost are key words designers have to keep in mind to succeed in a fast changing and competitive world wide market. But, before they finally accomplish their dream, their desires often turn into nightmares. This is mostly because new generation components are using very aggressive

Emcore solar cell

Abstract: GE "TUNNEL DIODE" triple-junction "solar cell" solar cells circuit diagram tunnel diode GaAs ATJ photovoltaic cell solar cell EMCORE CIC small solar panel circuit diagram PROTON
Contextual Info: THE DEVELOPMENT OF >28% EFFICIENT TRIPLE-JUNCTION SPACE SOLAR CELLS AT EMCORE PHOTOVOLTAICS Mark A. Stan, Daniel Aiken, Paul R. Sharps, Jennifer Hills, Brad Clevenger, & Navid S. Fatemi Emcore Photovoltaics, 10420 Research Rd., Albuquerque, NM 87123, USA navid_fatemi@emcore.com

Contextual Info: Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide Frank H. Ruddy, Member, IEEE, John G. Seidel, Robert W. Flammang, Ranbir Singh, Member, IEEE, and John Schroeder Abstract–Fast-neutron detectors based on high-purity semiinsulating 4H silicon carbide SiC semiconductor have been

33C408

Contextual Info: 33C408 4 Megabit 512K x 8-Bit CMOS SRAM Memory FEATURES: DESCRIPTION: • RAD-PAK Technology radiation-hardened against natural space radiation • 524,288 x 8 bit organization • Total dose hardness: - > 100 krad (Si) - Dependent upon space mission • Excellent Single Event Effect

IGBT board FUJI

Abstract: snubber resistance of IGBT thyristor 750vdc l series IGBT 150a 1200v IGBT FUJI module RBSOA circuit of six pack module igbt fuji igbt transistor modules 3rd Generation of 1200V IGBT Modules fuji igbt
Contextual Info: The Design Advantages of a Current Limited Third Generation IGBT Module Jerry Gallagher, Collmer Semiconductor Inc., Dallas, Texas Third generation IGBT modules that include a non-latch-up circuit simplify circuit designs. The NLU limits short circuit currents to simplify

2sc2930

Abstract: 2SD930 ET-191 2sc2623 etg36-04 2SC2542 2SC2929 2SC3549 2SD1072 2SD1073
Contextual Info: COLLHER S E M I C O N D U C T O R INC MAE D • 22 36 7 1 2 OGDlSflO flOl « C O L Switching fransistors/MOV's ^ ^ SWITCHING TRANSISTORS TQ-220AB kcont. Amps. Max. V ceo sus 3 400 800 250 -8 0 100 200 200 200 200 350 400 400 400 400 300 350 500 80 80 400

25c2625

Abstract: 2SC2625 2SC2930 2SC3725 ETG36-040D 1000 volt npn 2sd922 2SC3866 Fuji 2SC2930 npn transistor 2sc2625
Contextual Info: COLLHER S E M I C O N D U C T O R INC MAE D • 22 36 7 1 2 OGDlSflO flOl « C O L Switching fransistors/MOV's ^ ^ SWITCHING TRANSISTORS TQ-220AB kcont. Amps. Max. V ceo sus 3 400 800 250 -8 0 100 200 200 200 200 350 400 400 400 400 300 350 500 80 80 400