PRODUCT ID GUIDELINES Search Results

dream

Contextual Info: DREAM S.A.S. USB Vendor ID / Product ID Guidelines See also the USB-IF website www.usb.org 1. Introduction There are identification and certification options when designing a USB product with DREAM chips. Choices are USBImplementers Forum assigned Vendor ID with OEM-assigned Product ID or DREAM Vendor ID with DREAM-assigned

Contextual Info: January 2011 ENW89810K5CF Bluetooth QD ID:B014433 End Product Listing FCC ID: T7VEBMU IC ID: 216QEBMU PAN1311-SPP In f i n e o n’s BlueMoonUniversal Platform Wireless Modules User’s Manual Hardware Description Revision 1.1 November 2011 ENW89811xxxF

PAN1322-SPP

Contextual Info: August 2013 ENW89841A3KF Bluetooth QD ID:B021246 End Product Listing FCC ID: T7VEBMU IC ID: 216QEBMU PAN1322-SPP Intel’s BlueMoonUniversal Platform Wireless Modules User’s Manual Hardware Description Revision 1.3 Edition 2013-08-14 Published by Panasonic Industrial Devices Europe GmbH

Contextual Info: CP2102/9 SINGLE-CHIP USB TO UART BRIDGE Single-Chip USB to UART Data Transfer - Integrated USB transceiver; no external resistors required - Integrated clock; no external crystal required - Internal 1024-Byte programmable ROM for vendor ID, product ID, serial number, power descriptor, release

Motorola transistor smd marking codes

Abstract: 7900801CA lm6482a 5962-8993001MIA replacement for 11c90 TRANSISTOR SMD MARKING CODE QA LM311 SMD JM38510/10305BEA LM714h Motorola semiconductor smd marking codes
Contextual Info: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1998 Listing GIDEP Nr: GIDEP Category: Issued: 01/06/98 TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):

SQ7002

Abstract: SQ7002K SQ7002K-T1-GE3 8k marking 8k marking code
Contextual Info: SQ7002K Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V 1.30 RDS(on) (Ω) at VGS = 4.5 V 1.90 ID (A) 0.32 Configuration Single • Find out more about Vishay’s Automotive Grade Product

LM723 pin details

Abstract: LM723 application notes LM723 application note M38510-10104 lm723 54L73 DS26LV31 54L04 application lm723 945DM
Contextual Info: ENHANCED SOLUTIONS DESIGN/PROCESS CHANGE NOTIFICATION formerly Military & Aerospace Division PCN Nr: 2002 Listing GIDEP Nr: GIDEP Category: Issued: 01/09/2002 TRB Nr: Product ID (Description): Proposed Date of Change: Description of Change: Effect of Change:

M38510 10102BCA

Abstract: SCX6206 marking code E5 SMD ic jm38510/10101bga SCX6B48AIS SNJ54LS165J JM38510/30004bca JM38510/10102BCA JM38510/10102BIA 946DMQB
Contextual Info: N ENHANCED SOLUTIONS DESIGN/PROCESS CHANGE NOTIFICATION formerly Military & Aerospace Division PCN Nr: 2000 Listing GIDEP Nr: GIDEP Category: Issued: 01/24/2000 TRB Nr: Product ID (Description): Proposed Date of Change: Description of Change: Effect of Change:

IRF540

Abstract: IRF540 smd IRF540 application note Application Note of IRF540 irf540 "27 MHz" irf540 27 MHz IRF540 application IRF540S Applications Note of IRF540 transistor irf540
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF540, IRF540S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 23 A

irf630

Abstract: irf630 smd transistor transistor IRF630 irf630s irf630 philips
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF630, IRF630S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 9 A

IRF640 smd

Abstract: IRF640 applications note irf640 IRF640S IRF640 Field-Effect Transistor IRF640 application note
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF640, IRF640S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 16 A

150B

Abstract: PSMN030-150B
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN030-150B SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 150 V ID = 55.5 A

PSMN057-200B

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN057-200B SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 39 A

PSMN025-100D

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN025-100D SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 47 A

CY37256P160-125AI

Abstract: CY37256P208-125NC CY37256P160-83AI
Contextual Info: fax id: 6148 PRELIMINARY Ultra37256 UltraLogic 256-Macrocell ISR™ CPLD Features — tS = 4.5 ns — tCO = 5.0 ns Product-term clocking IEEE1149.1 JTAG boundary scan Programmable slew rate control on individual I/Os Low power option on individual logic block basis

2028 mosfet

Contextual Info: SQM110N10-09 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition PRODUCT SUMMARY VDS (V) 100 RDS(on) () at VGS = 10 V • TrenchFET Power MOSFET 0.0095 ID (A)

Contextual Info: SQM18N33-160H www.vishay.com Vishay Siliconix Automotive N-Channel 330 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 330 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.160 ID (A) • AEC-Q101 Qualified

Contextual Info: SQM120N04-1m8 Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0018 ID (A) • TrenchFET Power MOSFET 120 Configuration

63817

Abstract: SO8L dual
Contextual Info: SQJ951EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY ID (A) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

SQD25N15-52-GE3

Abstract: C4825
Contextual Info: SQD25N15-52 Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 150 RDS(on) (Ω) at VGS = 10 V 0.052 ID (A) • TrenchFET Power MOSFET 25 Configuration

Contextual Info: SQM120N10-3m8 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0038 ID (A) • AEC-Q101 Qualifiedd

Contextual Info: SQJ951EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY ID (A) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

Contextual Info: SQP60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.015 ID (A) • AEC-Q101 Qualifiedd

Contextual Info: COM20020I 3.3V Rev.E 5Mbps ARCNET ANSI 878.1 Controller with 2K x 8 On-Chip RAM Datasheet Product Features ̇ ̇ Eight, 256 Byte Pages Allow Four Pages TX and RX Plus Scratch-Pad Memory ̇ Next ID Readable ̇ Internal Clock Scaler and Clock Multiplier for