PQFN FOOTPRINT Search Results

Contextual Info: IRFH8334PbF-1 VDS VGS max RDS on max 30 V ± 20 V 9.0 (@VGS = 10V) (@VGS = 4.5V) 13.5 Qg typ. 7.1 ID 25 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET mΩ nC i PQFN 5X6 mm A Applications • Control MOSFET for high frequency buck converters Features Industry-standard pinout PQFN 5 x 6mm Package

PQFN

Abstract: PQFN footprint AN2467 DUAL ROW QFN leadframe MC33982PNA MC33982FC ADHESIVE GAP PAD PQFN 5 leads PQFN package power freescale JESD51-5
Contextual Info: Freescale Semiconductor, Inc. Application Note AN2467/D Revision 1.0 09/2004 Topic Page Freescale Semiconductor, Inc. 1.0 Purpose . 1 2.0 Scope. 1 3.0 Power Quad Flat No-Lead PQFN

JESD22-B113

Abstract: qfn Substrate design guidelines JESD22B113 JESD22-B111 JESD22B111 AN-1137 AN1136 JEDEC qfn tape JEDEC QFN case outline
Contextual Info: Application Note AN-1136 Discrete Power Quad Flat Pack No-Leads PQFN Board Mounting Application Note Table of Contents Page Device construction . 2 Design considerations . 3 Assembly considerations . 4

S2083

Abstract: M513 s2083 application
Contextual Info: MAAD-008789-000100 Digital Attenuator 32.0 dB, 2-Bit, TTL Driver, DC-4.0 GHz Rev. V1 Functional Schematic Features • • • • • • • Attenuation: Two 16 dB bits Low DC Power Consumption Small Footprint, PQFN Package Integral TTL Driver 50 ohm Impedance

PQFN

Abstract: DUAL ROW QFN leadframe PQFN footprint "exposed pad" PCB via JESD51-5 AN2467 PQFN package power freescale PQFN 8 leads
Contextual Info: Freescale Semiconductor Application Note AN2467 Rev. 4.0, 4/2007 Power Quad Flat No-Lead PQFN Package 1 Purpose This document provides guidelines for Printed Circuit Board (PCB) design and assembly. Package performance attributes such as Moisture Sensitivity

Contextual Info: VND5E004A-E VND5E004ASP30-E Double 4mΩ high-side driver with analog current sense for automotive applications Datasheet - production data PQFN - 12x12 Power lead-less – Overtemperature shutdown with auto restart thermal shutdown – Inrush current active management by

M513

Abstract: S2083
Contextual Info: MAAD-008791-000100 Digital Attenuator 31.5 dB, 6-Bit, TTL Driver, DC-3.0 GHz Functional Schematic Features • • • • • • • Rev. V1 Attenuation: 0.5 dB Steps to 31.5 dB Low DC Power Consumption Small Footprint, PQFN Package Integral TTL Driver 50 ohm Impedance

PQFN footprint

Abstract: AM50-0012 AM50-0012SMB AM50-0012TR AM50-0012TR-3000 M513
Contextual Info: High Dynamic Range LNA 1700 - 2400 MHz AM50-0012 V2 Features • • • • • Functional Block Diagram Ideal for Base Station Applications High Gain: 19 dB @ 2000 MHz Low Noise Figure: 1.4 dB High Input IP3: +13 dBm Small Footprint 3 mm 12 Lead PQFN Package

Contextual Info: VND5004B-E VND5004BSP30-E Double 4mΩ high-side driver with analog current sense for automotive applications Datasheet - production data PQFN 12x12 Power lead-less MultiPowerSO-30 Features Parameters Symbol Value Max transient supply voltage VCC 41 V Operating voltage range

IRFHM831TRPBF

Contextual Info: IRFHM831PbF HEXFET Power MOSFET VDS 30 V RDS on max 7.8 m Qg (typical) RG (typical) 7.3 0.5 nC ID 40h A (@VGS = 10V) (@Tc(Bottom) = 25°C) : : PQFN 3.3mm x 3.3mm Applications • Control MOSFET for Buck Converters Features and Benefits Benefits Features

IRFH5110

Abstract: max9337
Contextual Info: PD -96294A IRFH5110PbF HEXFET Power MOSFET VDS 100 V RDS on max 12.4 mΩ Qg (typical) 54 nC RG (typical) 1.5 Ω 63 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors

Contextual Info: FastIRFET IRFH4213DPbF HEXFET Power MOSFET VDSS RDS on max (@ VGS = 10V) (@ VGS = 4.5V) 25 V 1.35 m 1.90 Qg (typical) 25 nC ID (@TC (Bottom) = 25°C) 100 A PQFN 5X6 mm Applications  Synchronous Rectifier MOSFET for Synchronous Buck Converters

Contextual Info: IRFH5255PbF HEXFET Power MOSFET VDS 25 V RDS on max 6.0 mΩ Qg (typical) RG (typical) 7.0 0.6 nC ID 51 A (@VGS = 10V) (@Tc(Bottom) = 25°C) Ω PQFN 5X6 mm Applications • Control MOSFET for high Frequency Buck Converters Features and Benefits Benefits

IRFH5206

Abstract: max8750 IRFH5206TR2PBF AN-1154 IRFH5206TRPBF
Contextual Info: PD -97466 IRFH5206PbF HEXFET Power MOSFET VDS 60 V RDS on max 6.7 m 40 1.7 nC 89 A (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) : : PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

Contextual Info: PD -97615 IRFH5220PbF HEXFET Power MOSFET VDS 200 V RDS on max 99.9 mΩ 20 2.3 nC Ω 20 A (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors

PQFN footprint

Abstract: diode marking 33a on semiconductor IRFH5210TR2PBF marking 33a on semiconductor AN-1154 IRFH5210TRPBF IRFH5210
Contextual Info: PD - 97490 IRFH5210PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 100 V 14.9 mΩ Qg (typical) RG (typical) 39 nC 1.8 Ω ID 55 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

IRFH5106PbF

Abstract: AN-1154 IRFH5106
Contextual Info: PD -95959 IRFH5106PbF HEXFET Power MOSFET VDS 60 V 5.6 mΩ nC RG typical 50 1.4 ID 100 A RDS(on) max (@VGS = 10V) Qg (typical) (@Tc(Bottom) = 25°C) Ω PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

AC Transformer 50A 100V

Contextual Info: IRLH7134PbF HEXFET Power MOSFET VDS 40 V RDS on max 3.3 mΩ 39 nC (@VGS = 10V) Qg (typical) ID 50 (@Tc(Bottom) = 25°C) i A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications

Contextual Info: PD - 97614A IRFH5215PbF HEXFET Power MOSFET VDS 150 V RDS on max 58 mΩ Qg (typical) 21 nC RG (typical) 2.3 Ω 27 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Primary Side Synchronous Rectification Inverters for DC Motors

IRFH5010TRPBF

Abstract: mosfet 500V 50A IRFH5010TR
Contextual Info: PD-96297A IRFH5010PbF HEXFET Power MOSFET VDS 100 V RDS on max 9.0 mΩ Qg (typical) 67 nC RG (typical) 1.2 Ω (@VGS = 10V) ID 100 (@Tc(Bottom) = 25°C) h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors

IRFH5406TRPBF

Contextual Info: PD-96299A IRFH5406PbF HEXFET Power MOSFET VDS 60 V RDS on max 14.4 mΩ Qg (typical) 21 nC RG (typical) 1.1 Ω 40 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

Contextual Info: IRFH4210DPbF HEXFET Power MOSFET VDSS 25 V RDS on max (@ VGS = 10V) (@ VGS = 4.5V) 1.35 Qg (typical) 37.0 nC ID (@TC (Bottom) = 25°C) 100 A 1.10 m PQFN 5X6 mm Applications  Synchronous Rectifier MOSFET for Synchronous Buck Converters

IRFH5215

Abstract: irfh5215pbf
Contextual Info: PD - 97614A IRFH5215PbF HEXFET Power MOSFET VDS 150 V RDS on max 58 mΩ Qg (typical) 21 nC RG (typical) 2.3 Ω 27 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Primary Side Synchronous Rectification Inverters for DC Motors

TH 2190 mosfet

Abstract: TH 2190 AN-1154 IRFH5303TR2PBF IRFH5303TRPBF
Contextual Info: PD -97467 IRFH5303PbF HEXFET Power MOSFET VDS 30 V RDS on max 4.2 m 15 0.6 nC 82 A (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) : : PQFN 5X6 mm Applications • Control MOSFET for high frequency buck converters Features and Benefits Benefits