PPJT7801 Search Results
PPJT7801 Datasheets Context Search
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Contextual Info: PPJT7801 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V SOT-363 -0.7A Current Unit: inch mm Features RDS(ON) , VGS@-4.5V, ID@-0.7A<325mΩ RDS(ON) , VGS@-2.5V, ID@-0.6A<420mΩ RDS(ON) , VGS@-1.8V, ID@-0.5A<600mΩ Advanced Trench Process Technology |
Original |
PPJT7801 OT-363 2011/65/EU IEC61249 OT-363 MIL-STD-750, 2013-REV | |
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Contextual Info: PPJT7801 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V SOT-363 -0.7A Current Unit: inch mm Features RDS(ON) , VGS@-4.5V, ID@-0.7A<325mΩ RDS(ON) , VGS@-2.5V, ID@-0.6A<420mΩ RDS(ON) , VGS@-1.8V, ID@-0.5A<600mΩ Advanced Trench Process Technology |
Original |
PPJT7801 OT-363 2011/65/EU IEC61249 OT-363 MIL-STD-750, 2013-REV |