PPJT7800 Search Results
PPJT7800 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: PPJT7800 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V SOT-363 1A Current Unit: inch mm Features RDS(ON) , VGS@4.5V, ID@1.0A<150mΩ RDS(ON) , VGS@2.5V, ID@0.7A<215mΩ RDS(ON) , VGS@1.8V, ID@0.3A<400mΩ Advanced Trench Process Technology |
Original |
PPJT7800 OT-363 2011/65/EU IEC61249 OT-363 MIL-STD-750, 2013-REV | |
|
Contextual Info: PPJT7800 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V Current SOT-363 1A Unit: inch mm Features RDS(ON) , VGS@4.5V, ID@1.0A<150mΩ RDS(ON) , VGS@2.5V, ID@0.7A<215mΩ RDS(ON) , VGS@1.8V, ID@0.3A<400mΩ Advanced Trench Process Technology |
Original |
PPJT7800 OT-363 2011/65/EU IEC61249 OT-363 MIL-STD-750, 161ications 2013-REV |