POWERPAIR 3 X 3 PART MARKING Search Results
POWERPAIR 3 X 3 PART MARKING Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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5962-8950303GC |
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ICM7555M - Dual Marked (ICM7555MTV/883) |
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MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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54ACT244/B2A |
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54ACT244/B2A - Dual marked (5962-8776001B2A) |
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ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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MQ80186-8/BYC |
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80186 - Microprocessor, 16-Bit - Dual marked (8501001YC) |
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POWERPAIR 3 X 3 PART MARKING Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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week code SILICONIXContextual Info: Part Marking Information www.vishay.com Vishay Siliconix DEVICES: PowerPAK SO-8 PowerPAK SO-8L PowerPAK 1212-8 PowerPAIR® 6 x 3.7 PowerPAK 1212-8S PowerPAIR 6 x 5 PowerPAIR 3 x 3 Single and Dual 7401 LL TYWF 7401 = Example Base Part Number or marking codea |
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1212-8S 25-Jun-12 week code SILICONIX | |
Part Marking Information
Abstract: vishay siliconix code marking
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1212-8S, 212-8W 08-Jun-15 Part Marking Information vishay siliconix code marking | |
Contextual Info: SiZ342DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 and Channel-2 30 RDS(on) (Ω) MAX. ID (A) 0.0111 at VGS = 10 V 30 a 0.0138 at VGS = 4.5 V 27.5 Qg (Typ.) 4.5 nC • Material categorization: For definitions of |
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SiZ342DT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
ON TSOP-6 MARKING 6L
Abstract: SOT-923 PowerPAIR 3 x 3 part marking
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TSSOP-16 07-Feb-12 ON TSOP-6 MARKING 6L SOT-923 PowerPAIR 3 x 3 part marking | |
Contextual Info: SiZ342DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 and Channel-2 30 RDS(on) (Ω) MAX. ID (A) 0.0115 at VGS = 10 V 30 a 0.0153 at VGS = 4.5 V 27.5 Qg (Typ.) 4.5 nC • Material categorization: for definitions of |
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SiZ342DT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VISHAY SILICONIX www.vishay.com Power MOSFETs Package Application Note AN826 Recommended Minimum Pad Patterns with Outline Drawing Access for Vishay Siliconix MOSFETs By Kandarp Pandya This web-smart document offers the following features: a. Click on any package type listed under the “Package” column to go to the corresponding minimum recommended pad pattern |
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AN826 15-Apr-15 TSSOP-16 | |
Contextual Info: New Product SiZ300DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 a RDS(on) () ID (A) 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11 0.0110 at VGS = 10 V 28 0.0165 at VGS = 4.5 V 28 Qg (Typ.) |
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SiZ300DT 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
057 98BContextual Info: SiZ300DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) () 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11 0.0110 at VGS = 10 V |
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SiZ300DT 2002/95/EC 11-Mar-11 057 98B | |
Contextual Info: New Product SiZ300DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) () 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11 |
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SiZ300DT 2002/95/EC 11-Mar-11 | |
Contextual Info: SiZ340DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () MAX. ID (A) 0.0095 at VGS = 10 V 30a 0.0137 at VGS = 4.5 V 22 0.0051 at VGS = 10 V 40a 0.0070 at VGS = 4.5 V |
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SiZ340DT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiZ300DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 a RDS(on) () ID (A) 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11 0.0110 at VGS = 10 V 28 0.0165 at VGS = 4.5 V 28 Qg (Typ.) |
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SiZ300DT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
siz300dtContextual Info: New Product SiZ300DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 a RDS(on) () ID (A) 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11 0.0110 at VGS = 10 V 28 0.0165 at VGS = 4.5 V 28 Qg (Typ.) |
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SiZ300DT 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product SiZ300DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) () 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11 |
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SiZ300DT 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product SiZ702DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 and Channel-2 30 RDS(on) () ID (A) 0.0120 at VGS = 10 V 16a 0.0145 at VGS = 4.5 V 16a Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21 |
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SiZ702DT 2002/95/EC SiZ702DT-T1-GE3 11-Mar-11 | |
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234BContextual Info: New Product SiZ790DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0047 at VGS = 10 V 35a 0.0059 at VGS = 4.5 V |
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SiZ790DT 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 234B | |
Contextual Info: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.) |
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SiZ730DT 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product SiZ790DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0047 at VGS = 10 V 35a 0.0059 at VGS = 4.5 V |
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SiZ790DT 2002/95/EC 11-Mar-11 | |
Contextual Info: SiZ340DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) MAX. ID (A) 0.0095 at VGS = 10 V 30 a 0.0137 at VGS = 4.5 V 22 0.0051 at VGS = 10 V 40 a 0.0070 at VGS = 4.5 V |
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SiZ340DT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.) |
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SiZ730DT 2002/95/EC SiZ730DT-T1-GE3 11-Mar-11 | |
Contextual Info: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) () ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a Qg (Typ.) |
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SiZ728DT 2002/95/EC SiZ728DT-T1-GE3 11-Mar-11 | |
Contextual Info: New Product SiZ904DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () Max. ID (A) 0.024 at VGS = 10 V 0.030 at VGS = 4.5 V 0.0135 at VGS = 10 V 0.017 at VGS = 4.5 V 12a 12a 16a 16a |
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SiZ904DT 2002/95/EC SiZ904DT-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0072 at VGS = 10 V 24a 0.0092 at VGS = 4.5 V 24a 0.0039 at VGS = 10 V 28a 0.0047 at VGS = 4.5 V a 28 Qg (Typ.) |
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SiZ900DT 2002/95/EC SiZ900DT-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product SiZ700DT Vishay Siliconix N-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0086 at VGS = 10 V 16a 0.0108 at VGS = 4.5 V 16a 0.0058 at VGS = 10 V 16a 0.0066 at VGS = 4.5 V 16a Qg (Typ.) |
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SiZ700DT 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiZ704DT Vishay Siliconix N-Channel 30-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0240 at VGS = 10 V 0.0300 at VGS = 4.5 V 0.0135 at VGS = 10 V 0.0170 at VGS = 4.5 V 12a 12a 16a 16a Qg (Typ.) |
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SiZ704DT 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 |