POWERMOSFET GATE DRIVE Search Results

powermosfet Gate Drive

Contextual Info: n-Channel Power MOSFET OptiMOS BSF077N06NT3 G Data Sheet 1.4, 2011-03-01 Preliminary Industrial & Multimarket OptiMOS™ Power-MOSFET BSF077N06NT3 G 1 Description OptiMOS™60V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together

Contextual Info: n-Channel Power MOSFET OptiMOS BSF077N06NT3 G Data Sheet 1.3, 2011-03-01 Preliminary Industrial & Multimarket OptiMOS™ Power-MOSFET BSF077N06NT3 G 1 Description OptiMOS™60V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together

BSB150N15NZ3G

Contextual Info: n-Channel Power MOSFET OptiMOS BSB150N15NZ3 Data Sheet 2.3, 2011-03-01 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB150N15NZ3 G 1 Description OptiMOS™150V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together

Contextual Info: n-Channel Power MOSFET OptiMOS BSB056N10NN3 G Data Sheet 2.3, 2011-02-28 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB056N10NN3 G 1 Description OptiMOS™100V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together

Contextual Info: SSF7N80A Power MOSFET FEATURES Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge 800 V ^ D S o n = 1 . 8 Q. o II ■ B V DSS - ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V

Contextual Info: Advanced SSS1N60A Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^DS on = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 600V B Low Rds(0n) ■ 9-390 £1 (Typ.)

Contextual Info: IRF540A Advanced Power MOSFET 100 V RDS on = 0.052Î2 In = 28 A FEATURES • BVDSS = Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature

Contextual Info: Advanced SSP2N90A Power MOSFET FEATURES BVDSS - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V

Contextual Info: Advanced SSP7N80A Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 800 V ^ D S o n = 1 . 8 Q. lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V

Contextual Info: Advanced IRFSZ34A Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175; ■ Lower Leakage Current : 10 nA Max. @ VDS = 60V ■

Contextual Info: SFP9644 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^ D S o n - In ■ Extended Safe Operating Area ■ Lower Leakage Current : -1 0 |^A (M a x.) @ V DS = -250V

Contextual Info: Advanced SSS6N70A Power MOSFET FEATURES - 700 V ^ D S o n = 1.8 Q. BVDSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge lD = 4 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 700V

Contextual Info: S F W /I9 62 0 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^DS on In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -200V

Contextual Info: SSR/U3055LA Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance o ■ ^ D S o n = II Avalanche Rugged Technology ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage ■ Lower RDS(ON) : 00 ■ 0.1

Contextual Info: Advanced SSP1N60A Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 600 V ^ D S o n = 12 a lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 600V

Contextual Info: SFS9624 Advanced Power MOSFET FEATURES B V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge dss = ^ D S o n = ID ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V

Contextual Info: Advanced SSP45N20A Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^ D S o n ID = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10H A (M ax.) @ V DS = 200V

Contextual Info: SSR/U3055A FEATURES Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge 60 V ^ D S o n = 0 .1 5 ft o II ■ B V DSS - ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (M ax.) @ V DS = 60V

Contextual Info: SFP9530 Advanced Power MOSFET FEATURES BV DSS = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n - ■ Lower Input Capacitance In = -10.5 A ■ Improved Gate Charge 0 -3 & ■ 175°C Opereting Temperature TO-220 ■ Extended Safe Operating Area

Contextual Info: Advanced SSH4N90AS Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^DS on = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V H Low Rds(0n) ■ 3.054 £1 (Typ.)

Contextual Info: Advanced SSS3N90A Power MOSFET FEATURES - 900 V ^ D S o n = 6.2 Q. BVDSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge lD = 2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V

D065A

Contextual Info: Advanced SSS2N60A Power MOSFET FEATURES BVDSS - 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 1-3 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 600V

Contextual Info: Advanced IRFS140A Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA Max. @ V DS= 1 0 0 V

Contextual Info: IRFS750A FEATURES Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge 400 V ^ D S o n = 0 .3 & o ■ B V DSS - ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 400V