POWER TRANSISTOR 1 WATT 2.4 GHZ Search Results

HMC455LP3

Contextual Info: HMC455LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB

MICROWAVE TRANSISTOR

Contextual Info: HMC455LP3 v00.1102 MICROWAVE CORPORATION InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB

RMPA2455

Abstract: f245 VM122 500 watt RF amplifier GHz 2.45 Ghz power amplifier 30 db
Contextual Info: RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier Features General Description • ■ ■ ■ ■ ■ ■ ■ ■ The RMPA2455 power amplifier is designed for high performance WLAN access point applications in the 2.4–2.5 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm

Contextual Info: HMC455LP3 / 455LP3E v02.0605 AMPLIFIERS - SMT 8 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB • GSM, GPRS & EDGE

Contextual Info: HMC455LP3 / 455LP3E v02.0605 AMPLIFIERS - SMT 8 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB • GSM, GPRS & EDGE

Contextual Info: HMC455LP3 / 455LP3E v02.0605 AMPLIFIERS - SMT 8 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB • GSM, GPRS & EDGE

455LP3E

Abstract: HMC455LP3 150 watt amplifier circuits
Contextual Info: HMC455LP3 / 455LP3E v02.0605 AMPLIFIERS - SMT 5 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB • GSM, GPRS & EDGE

QB-925

Contextual Info: Model # QB-925 8 Watt Hybrid Driver Amplifier 2.0 – 6.0 GHz, 4 Watt Hybrid Driver Amplifier • High Saturated Output Power to 10 Watts • Rugged GaN Technology • Balanced Output Configuration for Optimum Return Loss • 2 Stage Amplifier with Independent Gate & Drain Bias Controls

150 watt amplifier circuits

Contextual Info: HMC455LP3 v01.0604 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB • GSM, GPRS & EDGE

RMPA2455

Abstract: VM122
Contextual Info: RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier Features General Description • ■ ■ ■ ■ ■ ■ The RMPA2455 power amplifier is designed for high performance WLAN access point applications in the 2.4–2.5 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm

BD135

Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
Contextual Info: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics

461LP3E

Abstract: HMC455LP3 HMC461LP3 pin configuration of IC 1619 2.1 amplifier circuit diagram
Contextual Info: HMC461LP3 / 461LP3E v02.0705 AMPLIFIERS - SMT 5 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features A high linearity 1 watt amplifier for: +45 dBm Output IP3 Balanced Configuration • Multi-Carrier Systems 12 dB Gain • GSM, GPRS & EDGE

1417 transistor

Abstract: transistor 1417 microwave amplifier 2.4 ghz 10 watts c 1417 1417-12A 2.4 ghZ rf transistor amplifier TRANSISTOR 12 GHZ RF TRANSISTOR 1 WATT POWER TRANSISTOR 1 WATT 2.4 GHZ 1417 ic
Contextual Info: 1417 - 12A 12 Watt - 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1417-12A is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1400-1700 MHz. This transistor is designed for Microwave Broadband Class C amplifier

HMC455LP3

Abstract: HMC461LP3 hmc - 020
Contextual Info: HMC461LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - SMT 8 Typical Applications Features A high linearity 1 watt amplifier for: +45 dBm Output IP3 Balanced Configuration • Multi-Carrier Systems 12 dB Gain

Contextual Info: HMC461LP3 v00.1202 MICROWAVE CORPORATION InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - SMT 8 Typical Applications Features A high linearity 1 watt amplifier for: +45 dBm Output IP3 Balanced Configuration • Multi-Carrier Systems 12 dB Gain

2100 wcdma repeater circuit

Abstract: HMC457 HMC457QS16G GSM 3g repeater circuit RF TRANSISTOR 1 WATT HMC457QS16GE
Contextual Info: HMC457QS16G / 457QS16GE v03.0907 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA 48% PAE @ +32 dBm Pout

Contextual Info: HMC457QS16G / 457QS16GE v03.0907 LINEAR & POWER AMPLIFIERS - SMT 11 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range ampliier: Output IP3: +46 dBm

GSM 3g repeater circuit

Abstract: HMC 007
Contextual Info: HMC457QS16G / 457QS16GE v01.0705 AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Designer’s Kit Available Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier:

GSM 3g repeater circuit

Abstract: HMC457QS16G 2100 WCDMA repeater circuit
Contextual Info: HMC457QS16G / 457QS16GE v02.0107 AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA

HMC457QS16G

Abstract: GSM repeater circuit using transistor 2100 mhz rf power amplifier circuit diagram 500 watt power circuit diagram GSM 3g repeater circuit 3g amplifier 2100 WCDMA repeater circuit HMC457
Contextual Info: HMC457QS16G / 457QS16GE v03.0907 6 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA 48% PAE @ +32 dBm Pout

GSM 3g repeater circuit

Abstract: HMC457 HMC457QS16G
Contextual Info: HMC457QS16G / 457QS16GE v03.0907 LINREAR & POWER AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm

GSM WCDMA repeater circuit

Abstract: HMC457QS16G 2100 mhz rf power amplifier circuit diagram GSM 3g repeater circuit 301 miniature smt transistor
Contextual Info: HMC457QS16G v00.0904 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - SMT 8 Features Typical Applications The HMC457QS16G is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA 48% PAE @ +32 dBm Pout

Contextual Info: HMC457QS16G / 457QS16GE v01.0705 AMPLIFIERS - SMT 8 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA

Contextual Info: HMC457QS16G v00.0904 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Features Typical Applications AMPLIFIERS - SMT 8 The HMC457QS16G is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA 48% PAE @ +32 dBm Pout