POWER SEMICONDUCTORS SHORT FORM Search Results

FS20R06XE3

Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Contextual Info: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors

RX1214B170W

Abstract: 100A101
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium

MF1011B900Y

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MF1011B900Y Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium

MX1011B700Y

Abstract: MRA444
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX1011B700Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium

RX1214B350Y

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium

RX1214B130Y

Abstract: RX1214B80W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium

BLS3135-10

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS3135-10 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor BLS3135-10 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications

BLS3135-20

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D259 BLS3135-20 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor BLS3135-20 FEATURES PINNING - SOT422A • Suitable for short and medium pulse applications

MX1011B200Y

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX1011B200Y Microwave power transistor Product specification Supersedes data of January 1995 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 µs

BLS2731-20

Abstract: RF POWER TRANSISTOR 2.7 ghz 3.1 ghz list part number
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS2731-20 Microwave power transistor Product specification Supersedes data of 1998 Mar 06 1998 Nov 25 Philips Semiconductors Product specification Microwave power transistor BLS2731-20 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications

transistor SMD DK rc

Abstract: transistor SMD DK RF NPN POWER TRANSISTOR C 10-12 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ BLS2731-110 SOT423 ic smd 342
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-110 Microwave power transistor Product specification Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 PINNING - SOT423A FEATURES • Suitable for short and medium pulse applications

BLS2731-50

Abstract: atc 700a
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-50 Microwave power transistor Product specification Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product specification Microwave power transistor BLS2731-50 PINNING - SOT422A FEATURES • Suitable for short and medium pulse applications

8051 timer internal structure

Abstract: 8051.BUS
Contextual Info: Philips Semiconductors Short-form preliminary specification Low voltage 16-bit microcontroller P90CL301BFH C100 FEATURES • Fully 68000 software compatible • Static design with 32-bit internal structure • Power saving modes: Power-down, Standby and Idle

skB 2802

Abstract: tp 2116 skbz 25 12
Contextual Info: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,

SKM151A4R

Contextual Info: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,

62792

Abstract: semikron skt 24 semikron data 01155 6822 008028 MOSFET 2906 semikron skt 240 180A020 skt16
Contextual Info: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,

skm 200 gb 122 d

Abstract: semikron skkt 132/ 14/ E Semitrans M SKD 100 GAL 124d Semikron SKR 26 /12 semikron skkh 161 semikron skkt 162/ 12/ D semipack skkt 161 sknh 210 semikron skt 240 SKKL131
Contextual Info: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,

05801

Abstract: 250GD128D the calculation of the power dissipation for the IGBT computer calculation of the power dissipation for the igbt 400GD diode IN 5402 skim250gd128d skim500gd128dm K/NSL-6952
Contextual Info: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,

SKM 400GB062D

Abstract: 62792 02634 SKM 400GD063D heatsink for skkt 72 semikron skt 140 IEC 974-1 Semitrans M SKD 100 GAL 124d 6822 semikron skkt 31
Contextual Info: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,

IEC 974-1

Abstract: SKM 400GB062D 195GB124DN 200gb 400GB062D 200GB123D 2119 SKM400GB123D 300GB174D 145GB123D
Contextual Info: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,

SKN 12\08

Abstract: Semikron SKR 26 /12 heatsink SKN semikron SKN 71 007358
Contextual Info: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,

thyristor 0615

Abstract: 250068 005649 2533 74202 semikron skkh 161 semikron skkt 132/ 14/ E skkt 56 SKKH91 semikron 1798
Contextual Info: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,