POWER RESISTORS Search Results

Contextual Info: 28 Power Resistors High Power Rating Chip Resistors www.asj.com.sg Features • • Offers double the power rating of standard chip resistors Up to 2W for 2512 case size • Pb-Free with reflow soldering backward compatibility Dimensions and Construction CPW10

TYCO HSA50

Abstract: HSA50 RESISTORS HSA25 HSA50 HSA5 ac to dc pulse supply 5000 watt HSC100 Aluminium Housed high Power Resistor hsc200 250L
Contextual Info: Aluminium Housed Power Resistors Type HS Series Type HS Series Characteristics - Electrical HSA & HSC - 5 Watts to 75 Watts Tyco are the leading European supplier of standard and custom designed aluminium housed resistors for general-purpose use, power supplies, power generation

hat25

Contextual Info: SH Vishay Sfernice Heatsink Encased Wirewound Power Resistors Industrial Applications FEATURES • ≤ 50 W at + 25 °C • High power characteristics RoHS • Utilize heatsink capability COMPLIANT • Good mechanical protection • Industrialized product

Contextual Info: POWER RESISTORS January, 2008 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal Bourns Plant Managers Bourns Fixed Resistors Product Line Announces Improvements in Power Resistor Specifications

NSG2555

Abstract: TRANSISTOR T4
Contextual Info: NSG2555 4 AMPERE NPN DARLINGTON POWER TRANSISTOR SILICON POWER DARLINGTON TRANSISTOR • • • • General Purpose Amplifier and Switching Application High Current Gain hFE = 3000 Typ @ 2A M onolithic Construction Built in Base Emitter Shunt Resistors

VPRC221

Abstract: phycomp 2322 phycomp 2322 series resistors Resistors 2322 Phycomp Phycomp phycomp 2322 resistors
Contextual Info: DISCRETE CERAMICS DATA SHEET www.phycomp-components.com VPRC221 5% High-voltage power chip resistors size 2512 Product specification Supersedes data of 3rd November 1999 2001 Apr 27 Rev.2 Phycomp Product specification High-voltage power chip resistors size 2512

Contextual Info: HLZ Vishay Dale Wirewound Resistors, Industrial Power, Edgewound FEATURES • High temperature silicon coating • Complete welded construction • Excellent for intermittent power and pulsing applications • Designed to meet heavy-duty requirement where space is at a premium

transistor c2383

Abstract: c2383 transistor C2383 C2383 NPN Transistor PH1214-30EL
Contextual Info: an AMP company Radar Pulsed Power Transistor, 3OW, 1 .Oms Pulse, 10% Duty PHI 214-30EL . 1.2 - 1.4 GHz v2.00 Features _-.- - - =.* NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors

transistor power 5w

Abstract: Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor J17 2052-5636-02 transistor C 1344 transistor Common Base configuration j170
Contextual Info: an AMP company CW Power Transistor, ,2.3 GHz 5W PH2323-5 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System

Contextual Info: EL / CEL Series — Commercial Power Resistors Features Applications • Low cost, high performance • Kitchen appliances • Resistance range from 0.2 to 600 ohms • Automotive devices • Power rating: EL series = 4 watts per inch • Televisions and radios

Contextual Info: High Power Low Ohmic Chip Resistors <Wide Terminal type> LTR Series Features 1 Chip Resistors for current detection : 10m ~ 2) High joint reliability with long side terminations. 3) Improvement of rated power enables to displace smaller size of resistors,

transistor j39

Abstract: J31 transistor
Contextual Info: T=- an AMP ‘5 cornRaw Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty PH2729-11 OM 2.7 - 2.9 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

Mallory Capacitor

Contextual Info: -= -=z an AMP company = Radar Pulsed Power Transistor, 3OW, lps Pulse, 10% Duty PH3134-30s 3.1 - 3.4 GHz v2.00 Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

pr0200020

Abstract: PR020002 pr01 vishay pr0200020100 PR01 2322 193 vishay Vishay PR02
Contextual Info: PR01/02/03 Vishay BCcomponents Power Metal Film Leaded Resistors FEATURES • High power in small packages 1 W/0207 size to 3 W/0617 size • Different lead materials for different applications • Defined interruption behaviour • Lead (Pb)-free solder contacts

VHB25-28S

Abstract: ASI10725
Contextual Info: VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28S is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability PACKAGE STYLE .380 4L STUD .112x45° A B

LTR50

Contextual Info: High Power Chip Resistors < Wide Terminal type > LTR Series Features 1 High joint reliability with long side terminations. 2) Highest power ratings in their class. 3) Guaranteed anti-surge characteristic in all series. 4) ROHM resistors have obtained ISO9001 / ISO / TS16949 certification.

CCF02

Contextual Info: CCF02 CCF-2 Vishay Dale Metal Film Resistors, Industrial Power, Flameproof FEATURES • Small size suitable for 1/2, 1 & 2 watt applications • High power rating, small size • Flameproof, high temperature coating meets EIA RS-325-A • Excellent high frequency characteristics

ARC-182

Abstract: transistor Common emitter configuration transistor t 04 27 PHOI an/ARC-182
Contextual Info: an AMP company CW Power Transistor, 30 - 400 MHz 16W PHOI 04-I 6 Features NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation 16 Watt PEP Output Diffused Emitter Ballasting Resistors Gold Metallization System Prqqn in Thousands of ARC-182 Airborne Radios

Contextual Info: Revised November 1999 100301 Low Power Triple 5-Input OR/NOR Gate General Description Features The 100301 is a monolithic triple 5-input OR/NOR gate. All inputs have 50 kΩ pull-down resistors and all outputs are buffered. • 23% power reduction of the 100101

Contextual Info: Revised November 1999 100304 Low Power Quint AND/NAND Gate General Description Features The 100304 is monolithic quint AND/NAND gate. The Function output is the wire-NOR of all five AND gate outputs. All inputs have 50 kΩ pull-down resistors. • Low Power Operation

IRFPS37N50A

Abstract: ST 7905 and application notes 7905 regulator AN-994 MJ30001 Pulse-10 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD- 91822C SMPS MOSFET IRFPS37N50A HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

Contextual Info: OPA2541 Dual High Power OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● OUTPUT CURRENTS TO 5A ● POWER SUPPLIES TO ±40V ● FET INPUT The OPA2541 is a dual power operational amplifier capable of operation from power supplies up to ±40V and output currents of 5A continuous. With two monolithic power amplifiers in a single package it provides

PIC18F97J94

Abstract: PIC18F65J94 PIC18F87J94 jedec Package TO-39 PIC18F66J CHHN 035 Full-bridge series resonant converter sck1r0 PIC18F67J94 lcd panel schema
Contextual Info: PIC18F97J94 FAMILY 8-Bit LCD Flash Microcontroller with USB and XLP Technology Extreme Low-Power Features: Peripheral Features continued : • Multiple Power Management Options for Extreme Power Reduction: - VBAT allows for lowest power consumption on back-up battery (with or without RTCC)

power amplifier circuit diagram with ic lm4871

Abstract: LM4871 5.1 audio power amplifier AN-450 LM4861 LM4871M LM4871N M08A DS100008-1
Contextual Info: LM4871 1.1W Audio Power Amplifier with Shutdown Mode General Description Key Specifications The LM4871 is a bridge-connected audio power amplifier capable of delivering typically 1.1W of continuous average power to an 8Ω load with 0.5% THD from a 5V power supply.