POWER MOSFETS APPLICATION NOTES Search Results
POWER MOSFETS APPLICATION NOTES Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN | |||
MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN | |||
MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
POWER MOSFETS APPLICATION NOTES Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: VISHAY SILICONIX Power MOSFETs Application Note 608 Power MOSFET Basics: Understanding Gate Charge and Using it to Assess Switching Performance By Jess Brown INTRODUCTION This is the second in a series of application notes that define the fundamental behavior of MOSFETs, both as standalone |
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02-Dec-04 | |
sot-23 74w datasheet
Abstract: APP1832 IRF6603 IRF6604 MAX1544 MAX1718 MAX1897
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com/an1832 MAX1718: MAX1897: AN1832, APP1832, Appnote1832, sot-23 74w datasheet APP1832 IRF6603 IRF6604 MAX1544 MAX1718 MAX1897 | |
SQ3427
Abstract: sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309
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AEC-Q101 VMN-SG2151-1209 docu33-4-9337-2727 SQ3427 sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309 | |
full bridge pwm controller sg3526
Abstract: SG3526 sample circuit sg3526 power supply full bridge sg3526 application notes MTP40N06M MTP10N10M application form chip sg3526 MTP50N05E soft start circuit 555 timer using in smps application form for chip sg3526
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AND8093/D r14525 full bridge pwm controller sg3526 SG3526 sample circuit sg3526 power supply full bridge sg3526 application notes MTP40N06M MTP10N10M application form chip sg3526 MTP50N05E soft start circuit 555 timer using in smps application form for chip sg3526 | |
Si4624DY
Abstract: SiP12203 si4624 POWERPAK SO8 mosfet IC MOSFET QG AN607 AN608 SI4622DY Si4642DY
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SiP12201 SiP12203 02-Oct-08 Si4624DY si4624 POWERPAK SO8 mosfet IC MOSFET QG AN607 AN608 SI4622DY Si4642DY | |
INT-936
Abstract: INTDT93-4 AN949 AN-949
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AN-949 02-Jul-10 INT-936 INTDT93-4 AN949 AN-949 | |
IRFP60A
Abstract: 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413
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O-220 Q101-Compliant IRFP60A 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413 | |
IPC-MF-150
Abstract: "thermal via" PCB D2PAK Siliconix mosfet guide SI4346DY Si4368DY Siliconix Selection Guide
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SI4346DY Si4368DY 21-Nov-07 IPC-MF-150 "thermal via" PCB D2PAK Siliconix mosfet guide Siliconix Selection Guide | |
pspiceContextual Info: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note 841 Electro-Thermal Simulation of Vishay Siliconix Power MOSFETs on a PSpice Platform By Kandarp Pandya INTRODUCTION Currently, separate R-C thermal and PSpice circuit models are provided on the product information page for each |
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AN838 AN838 AN609, pspice | |
500 Watt Phase Shifted ZVT Power Converter
Abstract: ZVT full bridge pwm controller uc3875 Designing a Phase Shifted Zero Voltage Transition ZVT Power Converter uc3875 application pfc ZVT uc3875 SEM900 APT9703 MKT .33K ZVT full bridge pwm controller phase shifted zero voltage
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APT9703 500 Watt Phase Shifted ZVT Power Converter ZVT full bridge pwm controller uc3875 Designing a Phase Shifted Zero Voltage Transition ZVT Power Converter uc3875 application pfc ZVT uc3875 SEM900 APT9703 MKT .33K ZVT full bridge pwm controller phase shifted zero voltage | |
10BQ040
Abstract: IRF7809A IRF7809AV
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PD-90010 IRF7809AV IRF7809AV Cd52-7105 10BQ040 IRF7809A | |
10BQ040
Abstract: IRF7811AV 16VZ
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PD-94009 IRF7811AV IRF7811AV IA-48 10BQ040 16VZ | |
Contextual Info: PD-TBD IRF7811AV IRF7811AV • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications Description This new device employs advanced HEXFET Power |
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IRF7811AV IRF7811AV | |
IRF7822Contextual Info: PD- 94032 PROVISIONAL IRF7822 HEXFET Power MOSFET for DC-DC Converters • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications |
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IRF7822 IRF7822 a52-7105 | |
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9936 SO8
Abstract: marking 9936 so-8
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PD-94031 IRF7811W IRF7811W 9936 SO8 marking 9936 so-8 | |
IRLR8103V
Abstract: 10BQ040
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PD-94021A IRLR8103V IRLR8103V combinatio252-7105 10BQ040 | |
95212Contextual Info: PD - 95212 IRF7809AVPbF • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications • Lead-Free Description This new device employs advanced HEXFET Power |
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IRF7809AVPbF IRF7809AV EIA-481 EIA-541. 95212 | |
transistor equivalent table
Abstract: totempole driver APP4190 CCFL Controllers power mosfets 4190 ccfl driver DS3988 DS3991 DS3994
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DS3994, DS3992, DS3991, DS3988, DS3984 DS39xx DS3984, transistor equivalent table totempole driver APP4190 CCFL Controllers power mosfets 4190 ccfl driver DS3988 DS3991 DS3994 | |
led rgb amplifier
Abstract: abstract led digital display board Luminus Driver max16821 LED led rgb amplifier circuit pwm rgb led driver Luminus pwm luminus datasheet APP4367 MAX16821
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MAX16821 com/an4367 AN4367, APP4367, Appnote4367, led rgb amplifier abstract led digital display board Luminus Driver max16821 LED led rgb amplifier circuit pwm rgb led driver Luminus pwm luminus datasheet APP4367 | |
IRF7809AV
Abstract: 10BQ040 EIA-541 F7101 IRF7101 IRF7809A MS-012AA
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PD-90010A IRF7809AV IRF7809AV EIA-481 EIA-541. 10BQ040 EIA-541 F7101 IRF7101 IRF7809A MS-012AA | |
Contextual Info: PD-90010A IRF7809AV • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications • 100% Tested for RG Description This new device employs advanced HEXFET Power |
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PD-90010A IRF7809AV IRF7809AV EIA-481 EIA-541. | |
10BQ040
Abstract: EIA-541 IRFR120 IRLR8103V
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PD-94021C IRLR8103V IRLR8103V EIA-481 EIA-541. EIA-481. 10BQ040 EIA-541 IRFR120 | |
IRF FET
Abstract: 10BQ040 EIA-541 IRFR120 IRLR8103V
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PD-94021C IRLR8103V IRLR8103V EIA-481 EIA-541. EIA-481. IRF FET 10BQ040 EIA-541 IRFR120 | |
10BQ040
Abstract: EIA-541 IRFR120 IRFU120 IRLR8103V
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PD-94021B IRLR8103V IRLR8103V O-252AA) EIA-481 EIA-541. EIA-481. 10BQ040 EIA-541 IRFR120 IRFU120 |