POWER MOSFET SSP Search Results

FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Contextual Info: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

NEC 10F triac

Abstract: 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272
Contextual Info: SEMICONDUCTOR DEVICES FOR POWER SUPPLY SELECTION GUIDE • Thyristor • Power MOSFET • Small-Signal MOSFET • Power Supply IC • Operational Amplifier • Comparator • Three-Terminal Regulator • Photocoupler • Zener Diode 13th Edition CONTENTS 1. POWER SUPPLY BLOCK DIAGRAM . 2

SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Contextual Info: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

marking g20

Abstract: 2SK1658
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1658 is an N -channel vertical type MOSFET which 2.1±0.1 can be driven by 2.5 V power supply. 1.25±0.1 As the MOSFET is low Gate Leakage Current, it is suitable for

lm117 3.3V

Abstract: 6v battery charger lm317 automatic 12v battery charger lm317 automatic LM317 dc adaptor 12v to 3.6v lm317 soic-8 circuit diagram for 48v automatic battery charger LM337 TO92 Parallel Application LM2596 SOT23-5 i2c based pwm generator 12V DC to 3 Phase 36V AC INVERTERS
Contextual Info: Power Products Selection Guide 1Q 2006 National’s Power Management Product Portfolio Power Solutions by Category Voltage Conversion Voltage Control Voltage References Voltage Monitoring Linear regulators MOSFET drivers Shunt Current gauges Switching regulators

Irf640 irf9540

Abstract: IRFR220TF IRF510 mosfet irf640 451 MOSFET KSP44 IRFR9120-TF STR 456 2n3904 2n3906 KST2222ATF IRFR120TF
Contextual Info: PRODUCT INDEX ALPHA NUMERIC INDEX Power MOSFET S/STR Standard MOSFET PART NO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907A-TF KST3904-TF KST3906-TF

SSS7N60B

Abstract: Power MOSFET SSP7n60b SSP7N60B
Contextual Info: SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

ssp45N20B 200v mosfet

Abstract: SSP45N20B SSS45N20B
Contextual Info: SSP45N20B/SSS45N20B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SSP10N60B

Abstract: SSS10N60B diode sd pd
Contextual Info: SSP10N60B/SSS10N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SS*2n60b

Abstract: SSP2N60B SSS2N60B SSP2N60 SSS2n60 20ISM
Contextual Info: SSP2N60B/SSS2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

ssp*45N20A

Abstract: SSP45N20A 45N20B 45N20
Contextual Info: SSP45N20B/SSS45N20B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SSP10N60B

Abstract: SSS10N60B
Contextual Info: SSP10N60B/SSS10N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SSP1N50B

Contextual Info: SSP1N50B SSP1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SSP1N60B

Abstract: Power MOSFET SSP SSS1N60B
Contextual Info: SSP1N60B/SSS1N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SSS4N60B

Abstract: ssp4n60b SSS4N60B equivalent Power MOSFET SSP4N60B
Contextual Info: SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

sss1n50B

Contextual Info: SSP1N50B/SSS1N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SSS7N60B

Abstract: SSS7N60B equivalent SSP7N60B 28A-600
Contextual Info: SSP7N60B/SSS7N60B SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

sss10n60b

Abstract: SSP10N60B
Contextual Info: SSP10N60B/SSS10N60B SSP10N60B/SSS10N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

ssp2n60b

Abstract: SSS2N60B SS*2n60b 20ISM
Contextual Info: SSP2N60B/SSS2N60B SSP2N60B/SSS2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SSS4N60B

Abstract: ssp4n60b Power MOSFET SSP4N60B SSS4N60B equivalent
Contextual Info: SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

vo8 diode

Abstract: MOSFET 800V 3A
Contextual Info: SSP3N80A Advanced Power MOSFET FEATURES Avatanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jaA Max. @ Low Rds(on) ' 3.800 Q (Typ.) 800 V RdS(oo) =

Contextual Info: SSP7N80A Advanced Power MOSFET FEATURES BVDSS = 800 V • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25nA Max. @ VDS = 800V

SSP4N80A

Abstract: 2950PF
Contextual Info: SSP4N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVDss - 800 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25j*A Max. @ VDS = 800V

MOSFET 900V 2A

Contextual Info: SSP2N90A Advanced Power MOSFET FEATURES BV0SS = 900 V • ■ ■ ■ ■ > Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 i-iA Max. @ Vqs = 900V