POWER MOSFET SO8 FL Search Results

NTMFS4846N

Abstract: NTMFS4846NT1G NTMFS4846NT3G
Contextual Info: NTMFS4846N Power MOSFET 30 V, 100 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThermally Enhanced SO8 Package

4946n

Contextual Info: NTMFS4946N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

NTMFS4849NT1G

Abstract: NTMFS4849NT3G
Contextual Info: NTMFS4849N Power MOSFET 30 V, 71 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThermally Enhanced SO8 Package

4851N

Abstract: NTMFS4851NT1G NTMFS4851NT3G
Contextual Info: NTMFS4851N Power MOSFET 30 V, 66 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThermally Enhanced SO8 Package

Contextual Info: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V

to220 pcb footprint

Abstract: "thermal via" PCB D2PAK LFPAK footprint Renesas LFPAK footprint POWERPAK SO8 TO220 HEATSINK DATASHEET thermal PCB D2PAK sot669 lfpak LFPAK package
Contextual Info: LFPAK The Toughest Power-SO8 The evolution of Power MOSFET packages Typical TO220 construction TO220 is the ‘original’ through-hole power package. It is suitable for through-hole mounting and low-cost wave soldering. It also provides very low thermal resistances when mounted to a suitable heatsink.

ITF86182SK8T

Abstract: MS-012AA TB370
Contextual Info: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V

Contextual Info: NTMFS4846N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

NTMFS4849NT1G

Abstract: NTMFS4849NT3G
Contextual Info: NTMFS4849N Power MOSFET 30 V, 71 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

Contextual Info: NTMFS4849N Power MOSFET 30 V, 71 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

4851N

Abstract: NTMFS4851NT1G NTMFS4851NT3G
Contextual Info: NTMFS4851N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

Contextual Info: NTMFS4851N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

AN7254

Abstract: AN7260 ITF86110DK8T MS-012AA TB370
Contextual Info: ITF86110DK8T Data Sheet 7.5A, 30V, 0.025 Ohm, Dual N-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 January 2002 Features • Ultra Low On-Resistance - rDS(ON) = 0.025Ω, VGS = 10V - rDS(ON) = 0.034Ω, VGS = 4.5V

AN7254

Abstract: ITF86172SK8T MS-012AA TB370 vj04
Contextual Info: ITF86172SK8T Data Sheet 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 January 2002 Features • Ultra Low On-Resistance - rDS(ON) = 0.016Ω, VGS = −10V - rDS(ON) = 0.023Ω, VGS = −4.5V

TB370

Abstract: AN7254 AN7260 ITF87072DK8T MS-012AA
Contextual Info: ITF87072DK8T Data Sheet 6A, 20V, 0.037 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 January 2002 Features • Ultra Low On-Resistance - rDS(ON) = 0.037Ω, VGS = −4.5V - rDS(ON) = 0.039Ω, VGS = −4.0V

AN7254

Abstract: AN7260 ITF86110DK8T MS-012AA TB370
Contextual Info: ITF86110DK8T Data Sheet 7.5A, 30V, 0.025 Ohm, Dual N-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 January 2000 Features • Ultra Low On-Resistance - rDS(ON) = 0.025Ω, VGS = 10V - rDS(ON) = 0.034Ω, VGS = 4.5V

ITF86182SK8T

Abstract: MS-012AA TB370
Contextual Info: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH January 2002 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V - rDS(ON) = 0.0175Ω, VGS = −4V

AN7254

Abstract: ITF86172SK8T MS-012AA TB370
Contextual Info: ITF86172SK8T Data Sheet 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 January 2000 File Number 4809.1 Features • Ultra Low On-Resistance - rDS(ON) = 0.016Ω, VGS = −10V - rDS(ON) = 0.023Ω, VGS = −4.5V

AN7254

Abstract: AN7260 ITF86130SK8T MS-012AA TB370
Contextual Info: ITF86130SK8T Data Sheet 14A, 30V, 0.0078 Ohm, N-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4798.5 Features • Ultra Low On-Resistance - rDS(ON) = 0.0078Ω, VGS = 10V - rDS(ON) = 0.010Ω, VGS = 4.5V - rDS(ON) = 0.012Ω, VGS = 4.0V

AN7254

Abstract: AN7260 ITF87072DK8T MS-012AA TB370
Contextual Info: ITF87072DK8T Data Sheet 6A, 20V, 0.037 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 March 2000 File Number 4812.3 Features • Ultra Low On-Resistance - rDS(ON) = 0.037Ω, VGS = −4.5V - rDS(ON) = 0.039Ω, VGS = −4.0V

Contextual Info: ITF87072DK8T TM Data Sheet 6A, 20V, 0.037 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 March 2000 File Number 4812.3 Features • Ultra Low On-Resistance - rDS(ON) = 0.037Ω, VGS = −4.5V - rDS(ON) = 0.039Ω, VGS = −4.0V

tesec DV240

Abstract: AN1029 AN-569 DV240 NDS9956 213 so8
Contextual Info: AN1029 April, 1996 Maximum Power Enhancement Techniques for SO-8 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus

RESISTOR FOOTPRINT 1206

Abstract: vishay so-8 asynchronous Buck controller 1206 footprint 1247 diode 25V capacitors LM2727 RESISTOR FOOTPRINTS 1812 footprint MOSFET SO-8
Contextual Info: National Semiconductor Application Note 1247 Chris Richardson October 2002 Introduction Additional Footprints The LM2727 Evaluation board has been designed for a wide variety of components in order to show the flexibility of the LM2727 chips. The input voltage limitations are the same as

flyback transformers

Abstract: high side MOSFET driver optocoupler 3.1v ZENER DIODE 24V to 15V REGULATOR IC
Contextual Info: LM5001 High Voltage Switch Mode Regulator General Description Features The LM5001 high voltage switch mode regulator features all of the functions necessary to implement efficient high voltage Boost, Flyback, SEPIC and Forward converters, using few external components. This easy to use regulator integrates a