POWER MOSFET SO-8 COMPLEMENTARY N-P CHANNEL Search Results

STS3C2F100

Contextual Info: STS3C2F100 N-CHANNEL 100V - 0.110 Ω - 3A SO-8 P-CHANNEL 100V - 0.320 Ω - 1.5A SO-8 COMPLEMENTARY PAIR STripFET POWER MOSFET TYPE VDSS RDS on ID STS3C2F100(N-Channel) STS3C2F100(P-Channel) 100 V 100 V < 0.145Ω < 0.380Ω 3.0 A 1.5 A • ■ ■ ■

JESD97

Abstract: STS3C2F100
Contextual Info: STS3C2F100 N-channel 100V - 0.110 Ω - 3A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS3C2F100(N-channel) 100V <0.145 3.0A STS3C2F100(P-channel) 100V <0.380 1.5A • Standard outline for easy automated surface

JESD97

Abstract: STS3C2F100
Contextual Info: STS3C2F100 N-channel 100V - 0.110 Ω - 3A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS3C2F100(N-channel) 100V <0.145 3.0A STS3C2F100(P-channel) 100V <0.380 1.5A • Standard outline for easy automated surface

JESD97

Abstract: STS4C3F60L s4c3f60l mosfet pch 3a 60v
Contextual Info: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly

mosfet pch 3a 60v

Abstract: JESD97 STS4C3F60L
Contextual Info: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly

Contextual Info: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly

AP4500M

Abstract: AP4502M AP4502 20V P-Channel Power MOSFET AP4535M AP4501M Power MOSFET SO-8 Complementary N-P channel "Power MOSFET" AP2030M
Contextual Info: Power MOSFET SO-8 RDS ON Max(mΩ) Part No. BV DSS(V) I D(A) P D(W) V GS@10V V GS@4.5V Application V GS@2.5V Complementary N-P channel 30V 50 70 5 2 AP4535M LCD -30V 70 90 -4 2 30V 28 42 7 2 AP4501M LCD,M/B -30V 20V 50 90 30 45 -5.3 2 6 2 AP2030M LCD,M/B

MOSFET IGNITION

Abstract: NTMS4700NR2
Contextual Info: ON Semiconductor Selector Guide − Power MOSFET Products Power MOSFET Products In Brief . . . ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑ ÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ

FDY4001CZ

Abstract: SC89
Contextual Info: FDY4001CZ Complementary N & P-Channel PowerTrench MOSFET tm Features General Description Q1: „ Max rDS on = 7Ω at VGS = 2.5V, ID = 175mA This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS=2.5V and

MOSFET P-channel SOT-23

Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Contextual Info: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Contextual Info: bQE D • 01331Ô7 GGGDSMS - T12 ■ - SEMELAB PLC SIILB ^ r -3 ° i-^ 3 prpr M AGNA r^ tec BUZ 905P BUZ 90BP NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY,

Contextual Info: ¡eluom Semiconductor, Inc. TC426 TC427 TC428 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ The TC426/TC427/TC428 are dual CMOS high-speed drivers. A TTL/CMOS input voltage level is translated into a raii-to-rail output voltage level swing. The CMOS output

TC426CPA

Abstract: tc428 equivalent tl494 mosfet dc ac inverter mosfet TC427CPA TC427E TC428COA TC426 equivalent
Contextual Info: WTELEDYNE COMPONENTS TC426 TC427 TC428 DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • High-Speed Switching C l = 1000 p F . 30 ns ■ High Peak Output Current. 1.5A ■ High Output Voltage Swing.Vdd- 25 mV

Contextual Info: WTELEDYNE COMPONENTS TC426 TC427 TC428 DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • High-Speed Switching Cl = 1000 pF 30 ns ■ High Peak Output Current. 1.5A ■ High Output Voltage Swing. V d d - 2 5 mV

MMDF2C02E

Abstract: MMDF2C02ER1 MMDF2C02ER2 B2C02
Contextual Info: MOTOROU SEMICONDUCTOR TECHNICAL DATA Product Pfeview MMDF2C02E Complementary TMOS Fieid Effect Winsiskors Motorola Prefe- Osvlse I I Medium Power Surface Mount Products ~ This new complementary TMOS MOSFET consists of an advanced series of N and P-Channel MOSFH die. The die are

Contextual Info: >1/1 >J X I > 1/1 ADVANCE INFORMATION All inform ation in this data sheet is prelim inary and subject to change. 7/92 P in -P ro g ra m m e d , L o w -V o lta g e , C u rre n t-M o d e S M P S C o n tro lle r The MAX741 can be pin-program m ed into hundreds of

Analog Devices JX A 8 pin

Abstract: ALD1103 N and P MOSFET
Contextual Info: I / I 1 A dvanced L inear D e v ic e s , In c . ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR APPLICATIONS GENERAL DESCRIPTION The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These

A Listing and Cross Reference of Available Technical Literature from ON Semiconductor

Abstract: MMDF3N06VL MMSF4205 MMSF4P01HDR1 MTP75N06HD MTB3N100E mtd1p50e transistor book transistor SOT23 TO4 36 IGBT Manual
Contextual Info: SG385/D Rev. 3, Jul-2000 Low Voltage Surface Mount TMOS Power MOSFET Selector Guide ON Semiconductor Featuring MiniMOS™ SO-8 , EZFET™, Micro8™, SOT-223, TSOP-6, SOT-23, SC-70/SOT-323, DPAK and D2PAK Low Voltage Surface Mount MOSFETs t TMOS Power MOSFETs

tc428 equivalent

Contextual Info: relwom TC426 Semiconductor, Inc. TC428 DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ The TC426/TC427/TC428 are dual CMOS high-speed drivers. A TTL/CMOS input voltage level is translated into an output voltage level swing equaling the supply. The

SI1473DH

Abstract: marking R5* sc-70 N2 SC70 tsop6 marking DC 74371 N2 SC70 6pin MSOP-8 marking AX PIN diode Pspice model V30114 EQUIVALENT OF TO252 PACK OF P-CHANNEL MOSFET WITH
Contextual Info: New Product Si1473DH Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.100 at VGS = - 10 V - 1.6 0.145 at VGS = - 4.5 V - 1.6 VDS (V) - 30 Qg (Typ) 4.1 nC • TrenchFET Power MOSFET APPLICATIONS RoHS • Load Switch for Portable Devices

N Channel d- MOSFET

Abstract: N Channel E- MOSFET ST MOSFET guide EL7182 p channel mosfet 100v GUIDE mosfet EL7212
Contextual Info: h i m CMOS Power MOSFET Drivers " CMOS Pow er MOSFET Drivers ELANTEC P art N um ber D escription P e a k Max "O N” T d i ^TD2 T r /T F i s P ackage C u rren t R esistance ns (ns) m A Con figuration N on-Inverting/ Iso-D rains Inverting/Iso-D rains 4.0A

Tr K 970

Abstract: DIODE 4d
Contextual Info: Complementary MOSFET ELM34601AA-N • General D escription ■ Features ELM 34601AA-N uses advanced tre n c h technology to provide excellent Rds on and low gate charge. N -channel P-channel Vds=30V Id=7A Rds(on) < 21mQ(Vgs=10V) Rds(on) < 32mQ(Vgs=4.5V) Vds=-30V

mosfet based ac drive ckt diagram

Abstract: 200w power AB amplifier circuit diagram DIODE V10-20 2.1 channel amplifier ckt TDA2075A TDA2075 high power fet audio amplifier schematic TDA1400 TRIPATH 200w power amplifier PCB layout
Contextual Info: Tri pat h Tec hnol og y, I nc. - Te c hni cal I nf orm at ion TDA2075A STEREO CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING T M TECHNOLOGY Preliminary Information Revision 0.9 – October 2005 GENERAL DESCRIPTION The TDA2075A is a two-channel, amplifier driver, that uses Tripath’s proprietary Digital Power Processing

Contextual Info: ISL6439 Data Sheet May 2002 Single Synchronous Buck Pulse-Width Modulation PWM Controller FN9057.1 Features • Operates from 3.3V to 5V Input The ISL6439 makes simple work out of implementing a complete control and protection scheme for a DC-DC stepdown converter. Designed to drive N-Channel