POWER MOSFET SMD PACKAGE Search Results

KTHC5513

Contextual Info: IC IC SMD Type Power MOSFET KTHC5513 Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Featuring Complementary Pair Low RDS on in a ChipFET Package for High Efficiency Performance Low Profile ( 1.10 mm) Allows Placement in Extremely Thin

P Channel Low Gate Charge

Abstract: KTHD3100C
Contextual Info: IC IC SMD Type Power MOSFET KTHD3100C Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Provides Great Thermal Characteristics Trench P-Channel for Low On Resistance Low Gate Charge N-Channel for Test Switching Absolute Maximum Ratings Ta = 25

Contextual Info: PD-91543C POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

IRFN054

Contextual Info: PD - 91543B POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

IRFN054

Contextual Info: PD-91543C POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: NTHD3101F Power MOSFET and Schottky Diode −20 V, Fetky, P−Channel, −3.2 A, with 2.2A Schottky Barrier Diode, ChipFET] Features • • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package Leadless SMD Package Provides Great Thermal Characteristics

Contextual Info: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: PD - 91545A POWER MOSFET SURFACE MOUNT SMD-1 IRFN044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) 0.04 Ω IRFN044 ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

smd marking DA QT

Abstract: 24W16 C2608 SMD mosfet MARKING code TJ NTHD3133PFT1G
Contextual Info: NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features •ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics

Contextual Info: NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features •ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics

IRFNG50

Abstract: mosfet 10a 800v high power 91556A
Contextual Info: PD - 91556A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG50 R DS(on) 2.0Ω ID 5.5A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

smd diode 39a

Abstract: mosfet 10a 800v IRFNG40 mosfet 10a 800v high power smd+diode+39a
Contextual Info: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

IRFN044

Abstract: smd diode 44a
Contextual Info: PD - 91545A POWER MOSFET SURFACE MOUNT SMD-1 IRFN044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN044 R DS(on) 0.04 Ω ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

IRHNB7360SE

Contextual Info: PD - 91740B IRHNB7360SE 400V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-3 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNB7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-3 International Rectifier’s RADHardTM HEXFET® MOSFET

IRHNA7264SE

Abstract: RAD-HARD
Contextual Info: PD - 91432C IRHNA7264SE 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7264SE Radiation Level RDS(on) 100K Rads (Si) 0.11Ω ID 34A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

IRHNA7460SE

Abstract: HEXFET Power MOSFET SMD2
Contextual Info: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

IRHNA7360SE

Contextual Info: PD-91398B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7360SE 400V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

IRHNA7460SE

Contextual Info: PD - 91399A IRHNA7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

IRHN7250SE

Contextual Info: PD - 91780B IRHN7250SE 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7250SE Radiation Level RDS(on) 100K Rads (Si) 0.10Ω ID 26A SMD-1 International Rectifier’s RADHardTM HEXFET® MOSFET

Contextual Info: PD - 91432C IRHNA7264SE 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7264SE Radiation Level RDS(on) 100K Rads (Si) 0.11Ω ID 34A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

IRHNA7360SE

Contextual Info: PD - 91398A IRHNA7360SE 400V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

IRHNB7264SE

Contextual Info: PD - 91738A IRHNB7264SE 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-3 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNB7264SE Radiation Level RDS(on) 100K Rads (Si) 0.11Ω ID 34A SMD-3 International Rectifier’s RADHardTM HEXFET® MOSFET

Contextual Info: PD - 91738A IRHNB7264SE 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-3 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNB7264SE Radiation Level RDS(on) 100K Rads (Si) 0.11Ω ID 34A SMD-3 International Rectifier’s RADHardTM HEXFET® MOSFET

Contextual Info: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, N−Channel, with 2.2 A Schottky Barrier Diode, ChipFET http://onsemi.com Features • • • • • MOSFET Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals