POWER MOSFET 500 A Search Results

SMD1P

Abstract: 2N7222U IRFN440 JANTX2N7222U JANTXV2N7222U irfn44
Contextual Info: PD-91552B IRFN440 JANTX2N7222U JANTXV2N7222U HEXFET POWER MOSFET [REF:MIL-PRF-19500/596] N - CHANNEL Ω MOSFET 500 Volt, 0.85Ω Product Summary HEXFET® power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry

t5n50

Abstract: 5n50 5n50 mosfet NTD5N50 NTD5N50T4 351 D-PAK
Contextual Info: NTD5N50 Preferred Device Advance Information Power MOSFET 5 Amps, 500 Volts N–Channel DPAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http://onsemi.com 5 AMPERES 500 VOLTS

2P50EG

Abstract: 2P50 2p50e AN569 MTP2P50E MTP2P50EG mosfet transistor 400 volts.100 amperes
Contextual Info: MTP2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed

AN569

Abstract: MTW20N50E
Contextual Info: MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

MTY30N50E

Contextual Info: MTY30N50E Preferred Device Power MOSFET 30 Amps, 500 Volts N−Channel TO−264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

MTY30N50E

Abstract: AN569
Contextual Info: MTY30N50E Preferred Device Power MOSFET 30 Amps, 500 Volts N–Channel TO–264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

MTP2P50E

Abstract: AN569 mosfet transistor 400 volts.100 amperes
Contextual Info: MTP2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this Power MOSFET is designed

TL 188 TRANSISTOR PIN DIAGRAM

Abstract: AN569 MTY20N50E
Contextual Info: MTY20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N–Channel TO–264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

AN569

Abstract: MTP2P50E mosfet transistor 400 volts.100 amperes
Contextual Info: MTP2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed

MTW14N50

Abstract: MTW14N50E AN569 MT*14N50E MTW14N50E-D
Contextual Info: MTW14N50E Preferred Device Power MOSFET 14 Amps, 500 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

Contextual Info: MTY20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

11N-50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 11 Amps, 500 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 11N50 is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state

Contextual Info: 2SK3535-01 500 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E AV =f(starting Tch):Vcc=48V,I(AV)<=25A Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch):Vcc=48V 2SK3535-01 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET

9N50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N50 Preliminary Power MOSFET 9 Amps, 500 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers planar stripe and DMOS technology. This technology allows a minimum on-state

16N50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 16N50 Preliminary Power MOSFET 16 Amps, 500 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

Contextual Info: FQA13N50CF N-Channel QFET FRFET® MOSFET 500 V, 15 A, 480 mΩ Features Description • 15 A, 500 V, RDS on = 480 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N50 Power MOSFET 4 A, 500 V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 4N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

7n50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N50 Preliminary Power MOSFET 7 Amps, 500 Volts N-CHANNEL POWER MOSFET 1 „ The UTC 7N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

1N50L-TA3-T

Abstract: 1N50
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N50 Preliminary Power MOSFET 1.3 Amps, 500 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

Contextual Info: Analog Power AM12N50P N-Channel 500-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 500 Typical Applications: • Off-line Power Supplies • Electronic Ballasts • High Power LED Lighting

Contextual Info: Analog Power AM9N50P N-Channel 500-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 500 Typical Applications: • Off-line Power Supplies • Electronic Ballasts • High Power LED Lighting

"RF MOSFET" 300W

Abstract: transistor tl 187 "RF MOSFETs" RF POWER MOSFET IXZ1210N50L 200W vhf "RF MOSFET" class d 200w IXZ12210N50L mosfet class ab rf
Contextual Info: IXZ12210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 125V operating

16N50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 16N50 Preliminary Power MOSFET 16 A, 500 V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

547 MOSFET

Abstract: "by 236" diode 2n50 500v 2A mosfet
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N50 Preliminary Power MOSFET 2 Amps, 500 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 2N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state