POWER MOSFET 150 A Search Results

150N15

Abstract: E 150N10 150N10 9100pF
Contextual Info: HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C, RGS = 1MW 150 150 V V ±20

Tf 227

Contextual Info: IXFN 150N15 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 150 150 V V VGS VGSM

150N15

Abstract: fast IXFX
Contextual Info: HiPerFETTM Power MOSFETs IXFK 150N15 IXFX 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 150 150

Contextual Info: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V = 25 A ID25 Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

CoolMOS Power Transistor

Abstract: POWER MOSFET 4600 UPS SIEMENS 25N80C
Contextual Info: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V ID25 = 20 A Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: FQA46N15 N-Channel QFET MOSFET 150 V, 50 A, 42 mΩ Features Description • 50 A, 150 V, RDS on = 42 mΩ (Max) @VGS = 10 V, ID = 25 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT150N06 Power MOSFET 150 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT150N06 is an N-channel Power Trench MOSFET, using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT150N06 Power MOSFET 150 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT150N06 is an N-channel Power Trench MOSFET, using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.

Contextual Info: Advance Technical Information Standard Power MOSFET IXTH 60N15 VDSS = 150 V ID cont = 60 A Ω RDS(on) = 33 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 150

150N15

Contextual Info: IXFK 150N15 IXFX 150N15 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150

60N15

Contextual Info: Advance Technical Information Standard Power MOSFET VDSS = 150 V ID cont = 60 A Ω RDS(on) = 33 mΩ IXTH 60N15 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 150

SQD25N15-52-GE3

Abstract: C4825
Contextual Info: SQD25N15-52 Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 150 RDS(on) (Ω) at VGS = 10 V 0.052 ID (A) • TrenchFET Power MOSFET 25 Configuration

SQM85N15-19-GE3

Contextual Info: SQM85N15-19 Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 150 RDS(on) (Ω) at VGS = 10 V 0.019 ID (A) • TrenchFET Power MOSFET 85 Configuration

SUD25N15-52

Contextual Info: SUD25N15-52 New Product Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.052 @ VGS = 10 V 25 0.060 @ VGS = 6 V 23 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized APPLICATIONS

150T4

Abstract: NTD3055 NTD3055-150 RG 702
Contextual Info: NTD3055-150 Power MOSFET 9.0 Amps, 60 Volts N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 9.0 AMPERES 60 VOLTS RDS on = 150 mΩ Typical Applications

3150g MOSFET

Contextual Info: NTD3055-150, NVD3055-150 Power MOSFET 9.0 A, 60 V, N−Channel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • NVD Prefix for Automotive and Other Applications Requiring

75n15

Contextual Info: Advance Technical Information IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS

solar inverter circuit

Abstract: D-68623
Contextual Info: Advanced Technical Information FMM 65-015P ID25 Trench Power MOSFET = 65 A = 150 V Ω = 12.5 mΩ VDSS RDSon -Phaseleg Topologyin ISOPLUS i4-PACTM T1 T2 1 5 MOSFET T1/T2 Features Conditions VDSS TVJ = 25°C to TVJmax Maximum Ratings VGS 150 V ±20 V ID25

Si2325DS

Abstract: MS1117
Contextual Info: Si2325DS New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 150 rDS(on) (W) ID (A) 1.2 @ VGS = −10 V −0.69 1.3 @ VGS = −6.0 V −0.66 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)

Contextual Info: SQD25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested

Si7956DP

Contextual Info: Si7956DP New Product Vishay Siliconix Dual N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.105 @ VGS = 10 V 4.1 0.115 @ VGS = 6 V 3.9 D TrenchFETr Power MOSFET D Low On-Resistance in New Low Thermal Resistance PowerPAKr Package

si3440

Abstract: Si3440DV Si3440DV-T1 SI3440DV-T1-E3 TSOP-6 .54
Contextual Info: Si3440DV Vishay Siliconix New Product N-Channel 150-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D PWM Optimized for Fast Switching In Small Footprint D 100% Rg Tested PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.375 @ VGS = 10 V 1.5 0.400 @ VGS = 6.0 V

starter/generator

Abstract: D-68623
Contextual Info: Advanced Technical Information FMM 150-0075P ID25 Trench Power MOSFET = 150 A = 75 V Ω = 4.7 mΩ VDSS RDSon -Phaseleg Topologyin ISOPLUS i4-PACTM T1 T2 1 5 MOSFET T1/T2 Features Conditions VDSS TVJ = 25°C to TVJmax Maximum Ratings VGS 75 V ±20 V ID25

Si2325DS

Contextual Info: Si2325DS New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 150 rDS(on) (W) ID (A) 1.2 @ VGS = −10 V −0.69 1.3 @ VGS = −6.0 V −0.66 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)