POWER MOSFET - 169 A Search Results

180v dc motor speed control schematic

Abstract: aircraft logic gates DIH-129 DIH-149 DIH-169
Contextual Info: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 65 Rushmore Street Westbury, NY 11590 DIH-129, DIH-149, DIH-169 Power MOSFET N/O SPST Photovoltaic AC-DC Relay Features: Applications: Ø Ø Ø Ø Ø Ø 28V DC Aircraft Power Control &

Contextual Info: IRF610A Advanced Power MOSFET Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge - 200 V ^ D S o n = 1.5 ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V I Low Rds(0n) ■ 1-169 £l(Typ.)

Contextual Info: DI ON ICS INC 31E D B SflMflêOM ODODB'ib 3 B D I O POWER MOSFET PHOTOVOLTAIC RELAY AC/DC, SPST/NO DIH-129 D DIH-149 DIH-169 FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low level logic compatibility Optical Isolation, to 6 5 0 V AC Low on resistance

sars03

Abstract: sars03 diode STR-E1555 STR-E1565 200W MOSFET POWER AMP SE024N str TV SMPS sars0 sanken hybrid Sanken CROSS
Contextual Info: PFC/DC-DC Systematic Combo Power IC STR-E1555 March, 2006 •General Description ■Package-SLA21Pin STR-E1555 is a Hybrid IC power-factor-corrected switching mode power supply SMPS . Start-up circuit and a controller of PFC and DC/DC parts are built in one chip. In addition,

sars03

Abstract: sars03 diode STR-E1565 SE024N stre1565 str TV SMPS SE024 sars03 transistor 24V SMPS 200w circuit single output SANKEN 24V DC
Contextual Info: PFC/DC-DC Systematic Combo Power IC STR-E1565 •General Description September .2005 ■Package-SLA21Pin STR-E1565 is a Hybrid IC power-factor-corrected switching mode power supply SMPS . Start-up circuit and a controller of PFC and DC/DC parts are built in one chip. In addition,

Motorola 0936

Abstract: 305 Power Mosfet MOTOROLA 173 MHz RF CHIP
Contextual Info: MOTOROLA . . _ Order this document byMRFit>4/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF184 RF POWER Field-Efffect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequen­ cies to 1.0 GHz. The high gain and broadband performance of this device

XRF184

Abstract: MRF184 173 MHz RF CHIP 305 Power Mosfet MOTOROLA
Contextual Info: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistor MRF184 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device

45n80c

Abstract: 800 coolmos
Contextual Info: IXKN 45N80C CoolMOS Power MOSFET VDSS = 800 V ID25 = 44 A RDS on max = 74 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B D S G G S E72873 S G = Gate S = Source D = Drain S D Either source terminal at miniBLOC can be used as main or Kelvin Source

fast diode SOT-227

Contextual Info: IXKN 45N80C COOLMOS * Power MOSFET VDSS = 800 V ID25 = 44 A RDS on max = 74 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B D S G G S E72873 S G = Gate S = Source D = Drain S D Either source terminal at miniBLOC can be used

ut40n03

Abstract: UT-40 a1693
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT40N03 Power MOSFET 40 Amps, 30 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UT40N03 power MOSFET provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

Contextual Info: IXKN 75N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 75 A RDS on) max = 36 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D miniBLOC, SOT-227 B S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source

sars03 diode

Abstract: diode sars03 sars03 chopper transformer winding formula STR-E1565 c1740s SE024N a933 transistor c1740-s STR-E1500
Contextual Info: STR-E1500 Family Application Note Sanken Electric Co., Ltd http://www.sanken-ele.co.jp STR-E1500 Family Application Note ///////////////// Contents ///////////////// 1 General Description 4 2 Features 4 3 STR-E1500 Family 4 Package Information 5 5 Block diagram

j608

Contextual Info: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the

Contextual Info: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–10R1 has been specifically designed for use

A1693

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT40N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ FEATURES * RDS ON = 17mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Drain *Pb-free plating product number: UT40N03L

Contextual Info: IXUN 280N10 Advanced Technical Information VDSS = 100 V ID25 = 280 A Ω typ. RDS(on) = 3.9 mΩ Trench Power MOSFET Very low RDS(on) SOT-227 B, miniBLOC D KS G G S KS S D G = Gate S = Source D = Drain KS = Kelvin Source Features Symbol Conditions VDSS TJ = 25°C to 150°C

ixun 350n10

Abstract: 350N10 IXUN350N10
Contextual Info: IXUN 350N10 Advanced Technical Information VDSS = 100 V ID25 = 350 A Ω typ. RDS(on) = 1.9 mΩ Trench Power MOSFET Very low RDS(on) SOT-227 B, miniBLOC D KS G G S KS S D G = Gate S = Source D = Drain KS = Kelvin Source Features Symbol Conditions VDSS TJ = 25°C to 150°C

Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz

VK200 INDUCTOR

Abstract: Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF175GU/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistors MRF175GU MRF175GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband

Contextual Info: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the

MRF255 equivalent

Abstract: mrf255 mosfet MRF255 MRF255PHT arco 461 mica trimmer ES211 "RF MOSFETs" 100 watt hf mosfet 12 volt 14 watt hf mosfet 12 volt vdd 2204B
Contextual Info: MOTOROLA Order this document by MRF255/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power Field-Effect Transistor N–Channel Enhancement–Mode 55 W, 12.5 Vdc, 54 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies

zener diode 7c3

Abstract: electrolytic capacitor 470 Nippon capacitors MRF255 equivalent
Contextual Info: MOTOROLA O rder th is docum ent by MRF255/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power Field-Efffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies

547 MOSFET

Abstract: unelco 1073 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF176GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband

MRF151G

Abstract: L8776 Nippon capacitors rf amplifier circuit mrf151g
Contextual Info: MOTOROLA O rder this docum ent by M RF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF151G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this