POWER MOSFET, P Search Results

power mosfet

Abstract: mosfet "Power MOSFET" POWER MOSFET DATA BOOK to220fp mosfet equivalent 2SK3130 TO-220FP mosfet Application Notes MOSFET DATA BOOK
Contextual Info: 2SK3130 Power MOSFET GENERAL DESCRIPTION FEATURES Page 1 2SK3130 Power MOSFET ABSOLUTE MAXIMUM RATIGS Page 2 2SK3130 Power MOSFET ELECTRICAL CHARACTERISTICS o Unless otherwise specified,TJ=25 C. Page 3 2SK3130 Power MOSFET TYPICAL ELECTRICAL CHARACTERISTICS

Contextual Info: ON Semiconductor Selector Guide − Power MOSFET Products Power MOSFET Products http://onsemi.com 8 ON Semiconductor Selector Guide − Power MOSFET Products http://onsemi.com 9

HIGH POWER MOSFET TOSHIBA

Abstract: all mosfet power TPD7101F MOSFET TOSHIBA
Contextual Info: TPD7101F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7101F 2 channel High-Side N-ch Power MOSFET Gate Driver The TPD7101F is a 2 channel high-side N-ch power MOSFET gate driver. This IC contains a power MOSFET driver and power MOSFET protective

2N7225U

Abstract: SMD1P IRFN250 JANTX2N7225U JANTXV2N7225U mosfet ir 250 n 2n7225
Contextual Info: PD-91549B IRFN250 JANTX2N7225U HEXFET POWER MOSFET JANTXV2N7225U [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 200 Volt, 0.100Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry

MOSFET P-channel SOT-23

Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Contextual Info: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

2n7224U

Abstract: IRFN150 JANTX2N7224U JANTXV2N7224U
Contextual Info: PD-91547B IRFN150 JANTX2N7224U JANTXV2N7224U HEXFET POWER MOSFET [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 100Volt, 0.070Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry

Contextual Info: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •

Contextual Info: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 110mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •

800V 40A mosfet

Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
Contextual Info: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •

Contextual Info: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 20mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •

Contextual Info: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 17mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •

SMD1P

Abstract: 2N7222U IRFN440 JANTX2N7222U JANTXV2N7222U irfn44
Contextual Info: PD-91552B IRFN440 JANTX2N7222U JANTXV2N7222U HEXFET POWER MOSFET [REF:MIL-PRF-19500/596] N - CHANNEL Ω MOSFET 500 Volt, 0.85Ω Product Summary HEXFET® power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry

2N7236U

Abstract: smd 2f IRFN9140 JANTX2N7236U JANTXV2N7236U
Contextual Info: PD-91553C IRFN9140 JANTX2N7236U JANTXV2N7236U HEXFET POWER MOSFET [REF:MIL-PRF-19500/595] P - CHANNEL Ω MOSFET -100 Volt, 0.20Ω Product Summary ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry

SiC POWER MOSFET

Abstract: sic MOSFET APTMC60TLM14CAG
Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

Contextual Info: Power MOSFET Electrical Characteristics Power MOSFET in Detail 4. Electrical Characteristics 4.1 Terminology The following is an explanation of main items used to evaluate power MOSFET performance. 1 |Yfs|: forward transfer admittance |Yfs| = ΔID/ΔVGS

Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

utc 324

Abstract: UF3055
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3055 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION As an N-channel enhancement mode power MOSFET, the UTC UF3055 is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls

UF840

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching

5962-8850301PA

Abstract: 5962-88503012C TSC426 5962-88503032C CQCC1-N20 5962-8850302PA
Contextual Info: SCOPE: DUAL POWER MOSFET DRIVER Device Type 01 02 03 Generic Number TSC426M x /883B TSC427M(x)/883B TSC428M(x)/883B Circuit Function Dual Power Inverting MOSFET Driver Dual Power Noninverting MOSFET Driver Dual Power Inverting/Noninverting MOSFET Driver Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:

Contextual Info: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998

Contextual Info: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998

UF630L-TM3-T

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET „ DESCRIPTION 1 1 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,