POWER MOS FET GATE DRIVE Search Results

2SK1658

Abstract: TC236
Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SK1658 IM-CHANNELMOS FET FOR SWITCHING The 2SK1658 is an N-channel vertical type MOS FET which can be PACKAGE DIMENSIONS Unit : mm driven by 2.5 V power supply. As the MOS FET is low Gate Leakage Current, it is suitable fo r

sot89-3

Contextual Info: MOS FET P-CHANNEL POWER MOS FET FOR SWITCHING The S-90P series is a P-channel power MOS FET that realizes low on-resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection

G1563

Abstract: D1563 2SK1658 C10535E VP15-00-3 NEC MARKING surface TC236
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SK1658 is an N -channel vertical type MOS FET which can be PACKAGE DRAWING Unit : mm driven by 2.5 V power supply. 2.1 ±0.1 1.25 ±0.1 As the MOS FET is low Gate Leakage Current, it is suitable for appliances

90n0212sma

Abstract: SOT233
Contextual Info: MOS FET N-CHANNEL POWER MOS FET FOR SWITCHING The S-90N series is an N-channel power MOS FET that realizes a low on-resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate

nec 2501

Abstract: nec RF package SOT89 NE5500134 nec marking power amplifier NEC MARKING CODE code marking NEC date code marking NEC FET SOT-89 N-Channel HS350 sot89 fet
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500134 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate

ELECTRONIC BALLAST SK

Contextual Info: Panasonic Power MOS-FET Gate Drive IC AN8175/S • Overview The AN8175/S is a high voltage,high speed power MOS-FET and IGBT driver with both high side and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized

dc 20v motor matsua

Abstract: mosfet Gate Drive dc 20v motor matsushita AN8175 panasonic igbt and power mosfet driver
Contextual Info: Panasonic Power MOS-FET Gate Drive 1C AN8175/S Overview The AN8175/S is a high voltage,high speed power MOS-FET and IGBT driver with both high side and low side referenced output channels. Proprietary HYIC and latch immune CMOS technologies enable ruggedized

2SK1656

Contextual Info: DATASHEET Warn MOS FIELD EFFECT TRANSISTOR m È8 Œ Êfflfë »n m , 2SK1656 N-CHANNEL MOS FET FOR SW ITC H IN G The 2SK1656 is an N-channel vertical type MOS FET which can be PACKAGE DIMENSIONS Unit : mm driven by 2.5 V power supply. As the MOS FET is low Gate Leakage Current, it is suitable for

2SK1657

Contextual Info: M O S FIELD EFFECT TRANSISTOR 2SK1657 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit: mm 2.8 ± 0.2 0.65ig:!5 1.5 3 The 2SK1657 is an N-channel vertical type MOS FET w hich can be driven by 2.5 V power supply. As the MOS FET is lo w Gate Leakage C urrent, it is suitable fo r filte r

90n0212sma

Contextual Info: POWER SUPPLY ICs [GENERAL-PURPOSE] POWER MOS FET Under Development The S-90N series is an N-channel power MOS FET that realizes a low on-resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate

MP4208

Contextual Info: MP4208 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type Four L2-π-MOSV in One MP4208 Industrial Applications High Power High Speed Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • −4 V gate drive available

HAF2026RJ

Abstract: HAF2026RJ-EL-E
Contextual Info: HAF2026RJ Silicon N Channel Power MOS FET Power Switching REJ03G1255-0100 Rev.1.00 Sep 26, 2005 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of

Here I Am Lord

Abstract: HAF2026RJ HAF2026RJ-EL-E
Contextual Info: HAF2026RJ Silicon N Channel Power MOS FET Power Switching REJ03G1255-0200 Rev.2.00 Jun 02, 2006 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of

Contextual Info: MP4208 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type L2-π-MOSV 4 in 1 MP4208 Industrial Applications High Power High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • −4 V gate drive available ·

Contextual Info: MP4210 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type Four L2-π-MOSV inOne MP4210 Industrial Applications High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver • 4-V gate drivability

Contextual Info: MP4211 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type Four L2-π-MOSV inOne MP4211 Industrial Applications High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver • 4-V gate drivability

MP4410

Contextual Info: MP4410 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type L2-π-MOSV 4 in 1 MP4410 Industrial Applications High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • 4 V gate drive available •

MP4209

Contextual Info: MP4209 Silicon N Channel MOS Type Four L2-π-MOSV in One TOSHIBA Power MOS FET Module MP4209 Industrial Applications High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver • 4-V gate drivability

2SJ128-Z

Abstract: TC181
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ128-Z P-CHANNEL SILICON POWER MOS FET FOR HIGH SPEED SWITCHING PACKAGE DRAWING Unit: mm • Suitable for switching power supplies, actuator controls, and pulse circuits. 5.0 ±0.2 • 4 V gate drive (Logic level)

Contextual Info: MP4412 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type Four L2-π-MOSV inOne MP4412 Industrial Applications High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver • 4-V gate drivability

Contextual Info: Rev.2.0_00 S-90N0113SMA POWER MOS FET The S-90N0113SMA is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection diode is built in

Contextual Info: Rev.2.0_00 S-90N0513SPN POWER MOS FET The S-90N0513SPN is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection diode is built in

PA2770GR

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2770GR SWITCHING DUAL P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2770GR is Dual P-Channel MOS Field Effect Transistors designed for Motor Drive application. 8 5 1 ; Source 1 2 ; Gate 1

13003 TRANSISTOR equivalent

Contextual Info: Rev.2.0_00 S-90N0442SUA POWER MOS FET The S-90N0442SUA is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection diode is built in