POWER LOSS Search Results
POWER LOSS Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
| MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN | |||
| MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
| MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN | |||
| MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
POWER LOSS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DESIGN AID Effect of V.S.W.R. on transmitted power EFFECT OF V.S.W.R. ON TRANSMITTED POWER V.S.W.R. V.S.W.R. RETURN TRANS. VOLT POWER LOSS LOSS REFL. TRANS dB dB dB COEFF. % POWER V.S.W.R. RETURN TRANS. VOLT POWER REFL. V.S.W.R. LOSS LOSS REFL. TRANS % dB |
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STD-521-1976 | |
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Contextual Info: VSWR, Return Loss and Transmission Loss vs. Transmitted Power VSWR Return Loss dB Trans. Loss (dB) Volt. Refl Coeff Power Trans (%) Power Refl (%) VSWR Return Loss (dB) Trans. Loss (dB) Volt. Refl Coeff Power Trans (%) Power Refl (%) 1.00 1.01 1.02 1.03 |
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9/03A | |
VOLTERRAContextual Info: POWER INDUCTORS POWER INDUCTORS CDBM75 M OUTLINE Developed the power inductor for the power supply IC for next generation CPU released by Volterra, Primarion and Maxim. It is a product which corresponds to the lower power loss and high frequency 500kHzϳ1MHz demand. |
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CDBM75 500kHz1MHz CDBM75 200nH VOLTERRA | |
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Contextual Info: Analog Power AMJ460N N-Channel 60V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power |
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AMJ460N J021-8 J021-8 DS-AMJ460 | |
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Contextual Info: Analog Power AM3455P P-Channel 30V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power |
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AM3455P DS-AM3455 | |
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Contextual Info: Analog Power AM2328N N-Channel 20V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power |
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AM2328N OT-23 | |
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Contextual Info: Analog Power AMJ432N N-Channel 20V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power |
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AMJ432N J021-8 J021-8 DS-AMJ432 | |
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Contextual Info: Analog Power AM2314N N-Channel 20V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power |
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AM2314N OT-23 | |
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Contextual Info: Analog Power AM2398N N-Channel 60V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power |
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AM2398N OT-23 | |
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Contextual Info: Analog Power AMJ431P P-Channel 30V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power |
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AMJ431P J021-8 J021-8 DS-AMJ431 | |
PQ200WNA1ZPH
Abstract: sharp lead free product
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PQ200WNA1ZPH PQ200WNA1ZPH sharp lead free product | |
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Contextual Info: Analog Power AM3428N N-Channel 20V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power |
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AM3428N DS-AM3428 | |
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Contextual Info: Analog Power AMJ420N N-Channel 20V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power |
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AMJ420N J021-8 J021-8 DS-AMJ420 | |
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Contextual Info: AM3406N Analog Power N-Channel 30V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power |
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AM3406N DS-AM3406 | |
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Contextual Info: Analog Power AM2329P P-Channel 30V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power |
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AM2329P OT-23 | |
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Contextual Info: Analog Power AMJ433P P-Channel 30V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power |
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AMJ433P J021-8 J021-8 DS-AMJ433 | |
6102005
Abstract: Low Power-Loss Voltage Regulators sharp lead free product The Optoelectronic Manufacturing PQxxx SHARP REGULATORS
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PQxxxEF02SZH PQxxxEF02SZH 6102005 Low Power-Loss Voltage Regulators sharp lead free product The Optoelectronic Manufacturing PQxxx SHARP REGULATORS | |
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Contextual Info: Low Power-Loss Voltage Regulators PQ05RF14 PQ05RF14 1A Output, Low Power-Loss Voltage Regulator Considering Power Line Voltage Drop • ■ Features Low power-loss Dropout voltage: MAX. 0.5V ● Compact resin full-mold package ● Output voltage value (5.1V) with an allowance for power line |
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PQ05RF14 | |
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Contextual Info: APT6013JFLL 600V 39A 0.130Ω R POWER MOS MOS 7 FREDFET POWER 7 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS ON |
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APT6013JFLL OT-227 | |
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Contextual Info: ACTIVE FREQUENCY MULTIPLIERS TYPICAL PERFO RM AN CE V S . INPUT POWER IN PU T RETURN LOSS VS. IN PU T POWER IN PU T RETURN LOSS VS. IN PU T POWER FOR J DRIVE LEVEL MULTIPLIERS cn TD CD CD o cc Z □c 1G INPUT POWER dBm) 14 18 22 INPUT POWER (dBm) IN PU T RETURN LOSS VS. IN PU T POWER |
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GS20141
Abstract: GS-12-658
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92A/linear 2002/95/IEC GS-12-658 GS-20-141 10106124-4004001LF 10106126-4004001LF 10HDP 10106132-A008001LF 10106139-A008001LF GS20141 GS-12-658 | |
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Contextual Info: APT8020JLL 800V 33A 0.200W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
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APT8020JLL OT-227 | |
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Contextual Info: APT50M50JLL 500V 71A 0.050W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
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APT50M50JLL OT-227 | |
Diode 188Contextual Info: APT6010JLL 600V 47A 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
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APT6010JLL OT-227 Diode 188 | |