POWER DIODES WITH V-I CHARACTERISTICS Search Results

ATTP1

Abstract: BZX85 BZX851
Contextual Info: <jX >G e n e r a l v BZX85 Series S e m ic o n d u c t o r Zener Diodes Vz Range 3.6 to 200V Power Dissipation 1,3W DO-2Q4AL DO-41 Glass Features -f+i ►Silicon Planar Power Zener Diodes. i >For use in stabilizing and clipping circuits with high power rating.

Contextual Info: v G eneral S e m ic o n i ZPU100 thru ZPU180 Zener Diodes Vz Range 100 to 180V Power Dissipation 1.3W D0-204AL DO-41 Glass Features “ iti Ì • Silicon Planar Zener Diodes I • For use in stabilizing and clipping circuits with higher power rating. • The Zener voltages are graded according to the

siemens igbt BSM 150 gb 100 d

Abstract: siemens igbt BSM 100 gb siemens igbt BSM 150 Gb 160 d siemens igbt BSM 50 gb 120 d siemens igbt BSM 300 siemens igbt chip siemens igbt BSM 100
Contextual Info: r i 3 r I i C f i l m i c v i t u r d o r U O I V e a I n v i u r ï D V J L -l n I o n r t K i o C - \J ^ IGBT Power Module • Haif-bridge ' • including fast free-wheeiing diodes 'jm • Package with insulated metai base piate VM4UJ0/3 Type ^CE Package

siemens igbt BSM 150 gb 100 d

Abstract: siemens igbt BSM 150 Gb 160 d Semiconductor Group igbt siemens igbt BSM 50 gb 100 d siemens igbt BSM 100 gb siemens igbt chip ScansUX69 siemens igbt BSM 100 siemens igbt BSM 400 gb siemens igbt BSM 25 gb 100 d
Contextual Info: r i 3 r I i C f i l m i c v i t u r d o r U O I V e a I n v i u r ï D V J L -l n I o n r t K i o C - \J ^ IGBT Power Module • Haif-bridge ' • including fast free-wheeiing diodes 'jm • Package with insulated metai base piate VM4UJ0/3 Type ^CE Package

ST02D-170F2

Abstract: AHA 500 ST02D-1 Zener Diode marking 3a DIODE CQ U180
Contextual Info: m n m ^ /u x Power-Clamper Surface M ount D evice m s Z e n e r Diode with F as t Recovery Diode • f t M U ! OUTLINE ST02D-170F2 170V 200W ftft ■H i Feature ■ Power Zener Diodes with FRD ■ SMD Package ■ Application for snubber circuit £ V\ 'T ¿5 V

Contextual Info: N AMER PHILIPS/DISCRETE 1N746A to 1N759A 2SE D bt.s3i3i aoi73ki? a • T -tt-O l I 400 mW ZENER DIODES Silicon planar diodes in DO-35 packages intended for use as low power voltage stabilizers or voltage references. The series consists of 14 types with nominal working voltages ranging from 3.3 to 12 V.

LB-156

Abstract: LB156 LB 156 ctb 34 RECTIFIER CTM32R LB156 33 A
Contextual Info: SANKEN ELECTRIC U S A H E Rectifier Diodes for Power Supply D I TTTDTm IVrm : 5 0 —800V 0D0007S 0 | Hlo :1.5—15A T - 3 .3 - O S ’ CfM/RB/LBs«te V rsm V rm V (V) lo (A) If s m (A) Tstg (°C) Vf Ir Ifkhi (V) (ii A) (/¿A) SOHz Half Sine with Wave CTM-31S

ior e78996

Contextual Info: Bulletin 127403 rev. A 09/97 International i ö r Rectifier IRKDL450.S20 FAST DIODES s e r ie s SUPER MAGN-A-pak Power Modules Features • High power FAST recovery diode series ■ High current capability 460 A ■ 3000 V RMS isolating voltage with non-toxic substrate

aS3131

Abstract: 1N746A 1N747A 1N748A 1N749A 1N750A 1N751A 1N759A air temperature 1N753A
Contextual Info: tr - N AMER P H IL IP S/ DI SC RE TE bfc,5313Ì 001731*7 a 2SE B 1N746A to 1N759A T-ll~07 i ; 400 mW ZENER DIODES , Silicon planar diodes in DO-35 packages intended for use as low power voltage stabilizers or voltage references. The series consists of 14 types with nominal working voltages ranging from 3.3 to 12 V.

PSL-80

Abstract: siemens igbt BSM 200 GA 120
Contextual Info: SIEMENS BSM 200 GA 100 D IGBT Module Preliminary Data V CE = 1000 V / c = 275 A at Tc = 25 C I c = 200 A at Tc = 80 C • • • • • Power m odule Single switch Including fast free-wheel diodes Package with insulated m etal base plate Package outlines/C ircuit diagram : 4”

laser diode for rw drive

Contextual Info: MITSUBISHI LASER DIODES t n e m p elo v e D r Unde inary TYPE NAME ML6XX24 SERIES FOR OPTICAL INFORMATION SYSTEMS m i l e r P ML60124R, ML601J24 FEATURES DESCRIPTION ML6XX24 is a high power AlGaAs semiconductor laser which provides a stable, single transverse mode oscillation with

BSM15GD120D

Contextual Info: SIEMENS B SM 15 G D 120 D IG B T Module Preliminary Data VCE = 1200 V I c = 6 x 25 A at Tc = 25 "C I c = 6 x 1 5 A at r o = 80" C • Power module • 3-phase full bridge • Including fast free-wheel diodes • Package with insulated metal base plate • Package outlines/Circuit diagram: 31’

Contextual Info: C i ir ly f f r * , c IGBT Module BSM 25 GD 100 D Preliminary Data VCE = 1000 V = 6 x 25 A lc • • • • • Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Circuit diagram: Fig. 3 b 1 Type Ordering code

siemens igbt BSM 50 gb 120 d

Contextual Info: SIEMENS IGBT Module Preliminary Data BSM 75 GB 120 D BSM 75 GAL 120 D VCE = 1200 V / c = 2 x 100 A at Tc = 25 "C I c = 2 x 75 A at Tc = 80 C • • • • • Power module Half-bridge/Chopper Including fast free-wheel diodes Package with insulated metal base plate

siemens igbt BSM 25 gb 100 d

Abstract: siemens igbt BSM 100 gb siemens igbt BSM 150 Gb 160 d siemens igbt BSM 50 gb 100 d igbt module bsm 300
Contextual Info: SIEMENS BSM 25 GB 100 D BSM 25 GAL 100 D IGBT Module Preliminary Data VCE = 1000 V / c = 2 x 3 5 A at Tc = 25 C I c = 2 x 2 5 A at r c = 80 C • • • • • Power m odule H alf-bridge/Chopper Including fast free-wheel diodes Package with insulated metal base plate

Contextual Info: r= J * 7 # SG S -T H O M S O N . * ß M [ E O T i 2 * S L 9 3 2 6 DUAL INTELLIGENT POWER LOW SIDE SWITCH PRODUCT PREVIEW • DUAL POW ER LOW SIDE DRIVER WITH LOW R dson TYPICALLY 250m£} (Tj = 25°C . INTERNAL OUTPUT CLAMPING DIODES V fb = 50V FOR INDUCTIVE RECIRCULATION

IXAN0044

Abstract: D94013DE ups manufacturing transformer diagram Bridge Rectifiers aeg MEO260-12DA3 AEG static inverter MOSFET welding INVERTER welding inverter circuit diagrams calculation of diode snubber calculation of IGBT snubber
Contextual Info: Fast Recovery Epitaxial Diodes FRED Characteristics - Applications - Examples IXAN0044 Rüdiger Bürkel, Thomas Schneider During the last 10 years, power supply topology has undergone a basic change. Power supplies of all kinds are now constructed so that heavy and bulky

Diode BA 163

Contextual Info: Zero Bias Detector Diodes Features • CAN BE USED WITHOUT EXTERNAL DC BIAS ■ EXHIBIT UNIFORM Rv CHARACTERISTICS ■ HIGH VOLTAGE SENSITIVITY ■ AVAILABLE IN PACKAGES, CHIPS AND BEAM LEADS Applications This family of Zero Bias Detector ZBD diodes is designed

MA4E932A

Abstract: MA4E931C MA4E932B MA40186 MA40186B MA40186C MA40187D MA4E929 MA4E929A MA4E929B
Contextual Info: an A M P company Zero Bias Detector Diodes V 2.00 Features Case Styles • • • • sions Can Be Used Without External DC Bias Exhibit Uniform Rv Characteristics High Voltage Sensitivity Available in Packages, Chips and Beam Leads See appendix for complete dimen­

Mixer and Detector Diodes

Abstract: X-Band Motion Detector "zero-bias schottky diode" ST Low Forward Voltage Schottky Diode gold metal detectors VF-8Z microwave motion sensors balun diode mixer motion sensor doppler x band diode detector waveguide
Contextual Info: APPLICATION NOTE Mixer and Detector Diodes Surface Barrier Diodes Electrical Characteristics and Physics of Schottky Barriers Most people who use diodes are more familiar with junction devices than with the surface barrier diodes commonly used in mixer and detector circuits. In a junction diode the rectifying

power BJT DARLINGTON PAIR NPN

Abstract: lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference
Contextual Info: BAT54 SERIES SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1– SEPTEMBER 1995 1 BAT54 SERIES ✪ 1 1 1 TYPICAL CHARACTERISTICS 1 10m 100m 3 1m 10m +125°C +85°C +25°C 1m +125°C 3 +85°C 100µ 10µ 100µ 10µ 0.15 0.3 0.45 0.6 Forward Voltage VF V

AN599

Abstract: AN-599 BY255 diode BYT261 100C BY255 BYT60P BYV255 BYW51
Contextual Info: AN599 APPLICATION NOTE PARALLEL OPERATION OF POWER RECTIFIERS INTRODUCTION In parallel operation of several diodes, the current is not split into equal parts because of differences between forward characteristics. The current through the rectifier having the lowest voltage drop will be higher than the current through the

Contextual Info: n/A-CON SEMICONDnBRLNGTON 11 D S b l4 2 S m 0G0134Û b • MIC / - O 7 ^ -6 7 /M W Zero Bias Detector Diodes Features ■ CAN BE USED WITHOUT EXTERNAL DC BIAS ■ EXHIBIT UNIFORM Rv CHARACTERISTICS ■ HIGH VOLTAGE SENSITIVITY ■ AVAILABLE IN PACKAGES, CHIPS

Silicon Point Contact Diode

Contextual Info: TYPICAL D.C. CHARACTERISTICS 36 37 1 Low barrier PDB 1 1 Ze o Bias P D B - 1 i Sta ndard GaAs Setlottky r .♦V ✓ 3 ^ ✓ l / • 4 ik \ " Standard GaAs \ Schottky \ I Low barrier PDB 2 " / X Zero Bia s PDB I 10 -20- ; Voltage N Current /mA 8 / Figure 10. Comparison of the l-V characteristics o f a 'zero bias' PDB diode, a low barrier PDB diode and a standard