POWER DIODES, TOSHIBA Search Results

reverse-conducting thyristor

Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Contextual Info: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate

1-1L1A

Contextual Info: DF2S16FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S16FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C Characteristic Symbol Power dissipation Rating P* Junction temperature Storage temperature range Unit

EQUIVALENT BYD33D

Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and

Contextual Info: DF3A6.8LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A6.8LFV Diodes for Protecting against ESD Lead Pb - free Characteristic Symbol Rating Unit P 150 * mW Power dissipation Junction temperature Storage temperature range Tj 150 °C

marking AU

Contextual Info: DF3A5.6LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A5.6LFV Diodes for Protecting against ESD Lead Pb - free Characteristic Symbol Rating Unit P 150 * mW Power dissipation Junction temperature Storage temperature range Tj 150 °C

Contextual Info: DF3A6.8LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A6.8LFV Diodes for Protecting against ESD Characteristic Symbol Rating Unit Power dissipation P 150 * mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range

Contextual Info: DF2S24FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S24FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C 0.07M Characteristic Symbol Rating Unit P* 150 mW Power dissipation Junction temperature Storage temperature range

Contextual Info: DF2S8.2FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S8.2FS Diodes for Protecting against ESD Unit in mm Maximum Ratings Ta = 25°C 0.2 ±0.05 0.07M A Characteristic Symbol Rating Unit Power dissipation P 150* mW Junction temperature

DF2S16FS

Contextual Info: DF2S16FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S16FS Diodes for Protecting against ESD Unit: mm 0.07M A Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C

Contextual Info: DF2S24FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S24FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C 0.07M Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg

Contextual Info: DF2S6.8FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S6.8FS Diodes for Protecting against ESD Unit in mm Maximum Ratings Ta = 25°C 0.07M A Characteristic Symbol Rating Unit Power dissipation P 150* mW Junction temperature Tj 150

Contextual Info: DF2S8.2FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S8.2FS Diodes for Protecting against ESD Unit in mm 0.2 ±0.05 Maximum Ratings Ta = 25°C 0.07M A Characteristic Symbol Rating Unit Power dissipation P 150* mW Junction temperature

Contextual Info: DF2S6.8FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S6.8FS Diodes for Protecting against ESD Unit in mm Maximum Ratings Ta = 25°C 0.07M Characteristic Symbol Rating Unit Power dissipation P 150* mW Junction temperature Tj 150 °C

DF2S24FS

Contextual Info: DF2S24FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S24FS Diodes for Protecting against ESD Unit: mm 0.07M A Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C

Contextual Info: DF2S8.2FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S8.2FS Diodes for Protecting against ESD Unit in mm Maximum Ratings Ta = 25°C 0.07M Characteristic Symbol Rating Unit Power dissipation P 150* mW Junction temperature Tj 150 °C

Contextual Info: DF3A8.2FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A8.2FV Diodes for Protecting against ESD Symbol Rating Unit P* 150 mW Power dissipation Junction temperature Storage temperature range Tj 150 °C Tstg −55~150 °C 2 0.32±0.05 3

Contextual Info: DF2S24FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S24FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150

Contextual Info: DF2S16FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S16FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150

DF2S12FS

Abstract: toshiba diodes 1-1l1a
Contextual Info: DF2S12FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S12FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150

Contextual Info: DF3A8.2FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A8.2FV Diodes for Protecting against ESD Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range 2 0.32±0.05 3

Contextual Info: DF3A6.2FV TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type DF3A6.2FV Diodes for Protecting Against ESD Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range 0.4 1 2 0.32±0.05

toshiba zener

Contextual Info: DF3A8.2LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A8.2LFV Diodes for Protecting against ESD Lead Pb - free Characteristic Symbol Rating Unit Power dissipation P 150 * mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range

Contextual Info: DF3A5.6LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A5.6LFV Diodes for Protecting against ESD • Lead Pb - free Characteristic Symbol Rating Unit Power dissipation P 150 * mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range

Contextual Info: DF3A3.6FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A3.6FV Diodes for Protecting against ESD Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range 2 0.32±0.05 3