POWER DIODE WITH PIV OF 30V Search Results

500 watt half bridge schematic

Abstract: 26A RECTIFIER BRIDGE 25A, 50V BRIDGE-RECTIFIER PFCM-1500M IR rectifier diode 100A 800V power diode with piv of 30v
Contextual Info: SENSITRON SEMICONDUCTOR PFCM-1500M TECHNICAL DATA DATA SHEET 4160, REV. – HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • HERMETIC PACKAGE • 600 VOLT, 0.21 OHM, 26.0A MOSFET • • RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING ULTRAFAST DIODE

rectifier diode with piv of 30v

Abstract: power diode with piv of 30v 500 watt half bridge schematic DIODE RECTIFIER BRIDGE 25A, 50V BRIDGE-RECTIFIER PFCM-1500C
Contextual Info: SENSITRON SEMICONDUCTOR PFCM-1500C TECHNICAL DATA DATA SHEET 4159, REV. – NON-HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • • • • SEALED PACKAGE 600 VOLT, 0.21 OHM, 26.0A MOSFET ULTRAFAST DIODE RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING

ZENER A16

Contextual Info: OM9001SS OM9003SS OM9002SS OM9004SS POWER MOSFET AND HIGH EFFICIENCY RECTIFIER IN A SINGLE HERMETIC ISOLATED SIP PACKAGE 100V Thru 500V, Up To 30 Amp, N-Channel MOSFET With Back To Back Zener Gate Clamp Protection And Uncommitted Ultra-Fast Recovery 35 To 50 nsec Rectifier

doorbell circuit working

Abstract: UDA-10 UDA-15 UDC-10 UDC-15 7.5kv diode 5KV fast recovery DIODE
Contextual Info: RECTIFIER ASSEMBLIES UDA, UDB, UDC, UDD , UDE, UDF SERIES High Voltage Doorbell Modules, Standard and Fast Recovery FEATURES DESCRIPTION • • • • • • • This series of high-voltage, high-current stacks that incorporate a unique modular design makes it ideally suited for high

1N6624U JANTXV

Abstract: "Ultra-Fast Recovery Rectifiers" 1N6629U JANTX JANTX 1N5811
Contextual Info: HERMETIC AXIAL LEAD RECTIFIERS ULTRAFAST RECOVERY DEVICES 25 nsec ≤ trr ≤ 70 nsec TYPE NUMBER PEAK INVERSE VOLTAGE MAX. AVG. DC OUTPUT CURRENT MAXIMUM REVERSE CURRENT @ PIV Volts Amps 55°C 100°C µAmps 25°C 100°C SRS160HE SRS180HE SRS1100HE 600 800

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

rectifier diode with piv of 30v

Abstract: power diode with piv of 30v 4559 S SHD116111 SHD116111B
Contextual Info: SHD116111 SHD116111B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4559, REV. A HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

DIODE 4014

Contextual Info: SHD116011 SHD116011B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4014, REV. C HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: • Switching Power Supply  Converters  Free-Wheeling Diodes  Polarity Protection Diode

SHD116011B

Abstract: rectifier diode with piv of 30v
Contextual Info: SHD116011 SHD116011B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4014, REV. A HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

Contextual Info: SHD116011 SHD116011B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4014, REV. C HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: • Switching Power Supply  Converters  Free-Wheeling Diodes  Polarity Protection Diode

SHD116011B

Abstract: rectifier diode with piv of 30v DIODE 4014
Contextual Info: SHD116011 SHD116011B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4014, REV. B HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Very Low Forward Voltage Drop

Contextual Info: SHD117011 P/N SHD117011(P/N)A SHD117011(P/N)B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4563, REV. A HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Add Suffix "S" to Part Number for S-100 Screening. Applications: Switching Power Supply

SHD117011

Abstract: rectifier diode with piv of 30v
Contextual Info: SHD117011 P/N SHD117011(P/N)A SHD117011(P/N)B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4563, REV. – HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Add Suffix "S" to Part Number for S-100 Screening. Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

Contextual Info: SHD117011 P/N SHD117011(P/N)A SHD117011(P/N)B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4563, REV. A HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Add Suffix "S" to Part Number for S-100 Screening. Applications: Switching Power Supply

Contextual Info: SHD117211 P/N SHD117211(P/N)A SHD117211(P/N)B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4576, REV. A HERMETIC POWER SCHOTTKY RECTIFIER Low Forward Voltage Drop Add Suffix "S" to Part Number for S-100 Screening. Applications: Switching Power Supply

SHD117211

Abstract: rectifier diode with piv of 30v
Contextual Info: SHD117211 P/N SHD117211(P/N)A SHD117211(P/N)B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4576, REV. – HERMETIC POWER SCHOTTKY RECTIFIER Low Forward Voltage Drop Add Suffix "S" to Part Number for S-100 Screening. Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

4717

Abstract: SEN-4717
Contextual Info: SENSITRON SEMICONDUCTOR SEN-4717 TECHNICAL DATA PART NUMBER: SEN-4717 SCHOTTKY BATTERY DISCHARGE BYPASS DIODE DESCRIPTION: BATTERY DISCHARGE BYPASS SILICON SCHOTTKY DIODE. o MAXIMUM RATINGS All ratings are at TA = 25 C unless otherwise specified. RATING CONDITIONS

117T

Abstract: G1594 BKC Diodes germanium diode "Germanium Diode"
Contextual Info: BKC INTERNATIONAL • O i “0 7 1 1 7 ^ 0 3 G00D317 3 30É D 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 TeleFax (6Ì1) 681-9135 Telex 928377 BKC 2 0 0 0 APPLICATIONS Designed specifically to be used with state of the art technology where

CA3141

Abstract: CA3141E MS-001-BB VF10
Contextual Info: CA3141 CT T ODU CEMEN 7 R P E A 74 T L 7 E OL REP 00-442OBS ENDED 8 1 m s.co MM ions ECO pplicat p@harri R O N ral A centap High-Voltage Diode Array For Cent : Call or email Industrial and Military Semiconductor January 1999 Commercial, Applications Features

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

diode 1334

Abstract: 1334 diode power diode with piv of 30v CA3141E CA3141 high voltage diodes MS-001-BB VF10 e16 diode 533 1334 diode
Contextual Info: CA3141 S E M I C O N D U C T O R High-Voltage Diode Array For Commercial, Industrial and Military Applications July 1996 Features Description • Matched Monolithic Construction - VF Match Each Diode Pair . . . . 0.55mV At IF = 1mA The CA3141E High Voltage Diode Array Consists of ten general purpose high reverse breakdown diodes. Six diodes are

CH751H-40PT

Abstract: diode with piv of 40v 1000C
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH751H-40PT SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.03 Ampere APPLICATION * High speed switching for detection SC-76/SOD-323 FEATURE * Small surface mounting type. SC-76/SOD-323 * Low VF and low IR * High reliability

IGBT 48V 200A

Contextual Info: SPM6G50-60 SENSITRON SEMICONDUCTOR TECHNICAL DATA Custom Power Hybrid Three-Phase IGBT BRIDGE, 600 VOLT, 50 AMP ELECTRICAL CHARACTERISTICS PER IGBT DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED PARAMETER SYMBOL MI N TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage

K375

Abstract: 100F6
Contextual Info: Preliminary Data Sheet OM120L60SB OMIOOF6OSB OM90L120SB QM70F120SB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Cu rre nt. High Voltage 600V An d 1200V. Up To 150 A m p IGBTs With FRED Diodes FEATURES • Includes Internal FRED Diode • Rugged Package Design