POWER DIODE 800V 20A Search Results

power Diode 800V 20A

Abstract: S20VT80
Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S20VT80 CaseCase : 2F: SVT Unit : mm 800V 20A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION ●Big Power Supply

RM10TA-M

Abstract: E80276 AC motor reverse forward electrical diagram FORWARD REVERSE 3 PHASE MOTOR
Contextual Info: MITSUBISHI DIODE MODULES RM10TA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE RM10TA-M,-H • IO • VRRM DC output current . 20A Repetitive peak reverse voltage . 400/800V • 3 phase bridge • Insulated Type • UL Recognized

Contextual Info: MITSUBISHI DIODE MODULES RM10TA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE RM10TA-M,-H DC output current . 20A Repetitive peak reverse voltage . 400/800V • 3 phase bridge • Insulated Type • UL Recognized Yellow Card No. E80276 N

Contextual Info: MITSUBISHI DIODE MODULES RM10TA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE RM10TA-M,-H DC output current . 20A Repetitive peak reverse voltage . 400/800V • 3 phase bridge • Insulated Type • UL Recognized Yellow Card No. E80276 N

RM10TB

Abstract: RM10TB-M rm10t
Contextual Info: MITSUBISHI DIODE MODULES RM10TB-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE ! RM10TB-M,-H j • lo DC output current.20A Repetitive peak reverse voltage 400/800V • 3 phase bridge • Insulated Type • UL Recognized Yellow Card No. E80276 N>

Contextual Info: MITSUBISHI DIODE MODULES RM10TA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE RM10TA-M,-H • lo DC output cu rre n t. 20A Repetitive peak reverse voltage 400/800V • 3 phase bridge • Insulated Type • UL Recognized Yellow Card No. E80276 N

forward and reverse control of 3 phase ac motor

Abstract: "Power Diode" 500V 20A
Contextual Info: MITSUBISHI DIODE MODULES RM10TA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE RM10TA-M,-H •.to • • • • DC output current. 20A V rrm Repetitive peak reverse voltage 400/800V 3 phase bridge Insulated Type UL Recognized Yellow Card No. E80276 N

APT38F80B2

Abstract: APT38F80L MIC4452
Contextual Info: APT38F80B2 APT38F80L 800V, 38A, 0.28Ω Max, trr ≤300ns N-Channel FREDFET T-Max Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT38F80B2

Abstract: APT38F80L MIC4452
Contextual Info: APT38F80B2 APT38F80L 800V, 41A, 0.24Ω Max, trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

400v 20A ultra fast recovery diode

Abstract: APT38F80B2 APT38F80L MIC4452
Contextual Info: APT38F80B2 APT38F80L 800V, 38A, 0.28Ω Max, trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT38F80B2 APT38F80L 800V, 41A, 0.24Ω Max, trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APTM100DA40T1G VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC Features • 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction

Contextual Info: APTM100SK40T1G VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Buck chopper MOSFET Power Module 5 11 6 Application • • Q1 7 AC and DC motor control Switched Mode Power Supplies Features 8 NTC 3 4 • CR2 1 2 • • • 12 Power MOS 8 MOSFETs

APTM100DA40T1G

Abstract: APT0406 APT0502
Contextual Info: APTM100DA40T1G VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC Features • 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction

"VDSS 800V" 40A mosfet

Contextual Info: APTMC120HR11CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 110mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 20A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies

E80276

Abstract: TM10T3B-M
Contextual Info: MITSUBISHI THYRISTOR MODULES TM10T3B-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM10T3B-M,-H • IO • VRRM • • • • DC output current . 20A Repetitive peak reverse voltage . 400/800V VDRM Repetitive peak off-state voltage

Contextual Info: S6304 Data Sheet SiC Schottky Barrier Diode Bare Die VR 1200V IF 20A*1 65nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type

Contextual Info: MITSUBISHI THYRISTOR MODULES TM10T3B-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM10T3B-M,-H DC output current . 20A Repetitive peak reverse voltage . 400/800V VDRM Repetitive peak off-state voltage . 400/800V 3 Phase Mix Bridge

Contextual Info: MITSUBISHI THYRISTOR MODULES TM10T3B-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM10T3B-M,-H DC output current . 20A Repetitive peak reverse voltage . 400/800V VDRM Repetitive peak off-state voltage . 400/800V 3 Phase Mix Bridge

APT10078BLL

Contextual Info: APT50GT120B2RDL G 1200V TYPICAL PERFORMANCE CURVES APT50GT120B2RDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.

MOSFET welding INVERTER 200A

Abstract: H bridge 300v 30a jc5010
Contextual Info: APT20GS60BRDQ1 G APT20GS60SRDQ1(G) 600V, 20A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low

SKW07N120

Contextual Info: Preliminary SKW07N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:

APT10078BLL

Abstract: APT50GT120LRDQ2G
Contextual Info: APT50GT120LRDQ2 G 1200V TYPICAL PERFORMANCE CURVES APT50GT120LRDQ2 APT50GT120LRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO-264 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch

Contextual Info: TYPICAL PERFORMANCE CURVES 1200V APT33GF120B2_LRDQ2 G APT33GF120B2RDQ2 APT33GF120LRDQ2 APT33GF120B2RDQ2G* APT33GF120LRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED (B2) T-Max® TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through