POWER DIODE 6A Search Results

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

APT06DC60HJ

Contextual Info: APT06DC60HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 600V IC = 6A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery

APT06DC60HJ

Contextual Info: APT06DC60HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 600V IC = 6A @ Tc = 100°C Application •    Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features     + ~ SiC Schottky Diode

Contextual Info: STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

Contextual Info: STPSC606 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode K A K Description TO-220AC STPSC606D The SiC diode is an ultrahigh performance power

STPSC606D

Abstract: STPSC606 STPSC606G-TR STPSC606G
Contextual Info: STPSC606 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode K A K Description TO-220AC STPSC606D The SiC diode is an ultrahigh performance power

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

Contextual Info: US 3A . US 3M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /4 Surface mount diode Ultrafast silicon rectifier diodes US 3A.US 3M

Contextual Info: S3A . S3M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /4 Surface mount diode Standard silicon rectifier diodes S3A.S3M  4

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet − production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ K K Description The SiC diode is an ultrahigh performance power

Contextual Info: SB 320.SB 3100 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Schottky barrier rectifiers diodes SB 320.SB 3100 8  9  1

Contextual Info: 405nm Butterfly Packaged Diode Laser K41S14F-0.10W Key Features： Š 405nm wavelength Š 100mW output power Š 60µm fiber core diameter Š 0.22NA Applications： Š Printing Š Biochemical Analysis Š Scientific BWT Beijing’s High Power Diode Laser Modules are manufactured by

Contextual Info: 405nm Butterfly Packaged Diode Laser K41S14F-0.10W Key Features： Š 405nm wavelength Š 100mW output power Š 60µm fiber core diameter Š 0.22NA Applications： Š Printing Š Biochemical Analysis Š Scientific BWT Beijing’s High Power Diode Laser Modules are manufactured by

405nm diode

Abstract: 405nm Laser 405nm
Contextual Info: 405nm Coaxial Packaged SM Diode Laser K41S03F-0.03W-S Key Features： Š 30mW output power Š 3µm fiber core diameter Š 0.12NA Š 405nm wavelength Applications： Š Printing Š Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by

405nm Laser 5 mw

Abstract: 405nm 650NM laser diode 20mw 405nm 20mW laser diode 405nm 405nm Laser 15 mw
Contextual Info: 405nm Coaxial Packaged SM Diode Laser K41S03F-0.02W-S Key Features： Š 20mW output power Š 3µm fiber core diameter Š 0.12NA Š 405nm wavelength Applications： Š Printing Š Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by

Contextual Info: 405nm Coaxial Packaged MM Diode Laser K41S03F-0.10W Key Features： Š 100mW output power Š 60µm fiber core diameter Š 0.22NA Š 405nm wavelength Applications： Š Printing Š Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by

Contextual Info: 405nm Coaxial Packaged SM Diode Laser K41S03F-0.02W-S Key Features： Š 20mW output power Š 3µm fiber core diameter Š 0.12NA Š 405nm wavelength Applications： Š Printing Š Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by

HAT2126RP

Contextual Info: HAT2126RP Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching ADE-208-1576D Z 5th. Edition Dec. 2002 Features • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode

Contextual Info: 405nm HHL Packaged SM Diode Laser K41S06F-0.10W Key Features： Š 405nm wavelength Š 100mW output power Š 60µm fiber core diameter Š 0.22NA Applications： Š Printing Š Biochemical Analysis Š Scientific BWT Beijing’s High Power Diode Laser Modules are manufactured by

Contextual Info: 405nm Coaxial Packaged SM Diode Laser K41S03F-0.03W-S Key Features： Š 30mW output power Š 3µm fiber core diameter Š 0.12NA Š 405nm wavelength Applications： Š Printing Š Aiming beam BWT Beijin g’s High Power Diode Laser Modules are manufactured b y

Contextual Info: 405nm HHL Packaged SM Diode Laser K41S06F-0.10W Key Features： Š 405nm wavelength Š 100mW output power Š 60µm fiber core diameter Š 0.22NA Applications： Š Printing Š Biochemical Analysis Š Scientific BWT Beijing’s High Power Diode Laser Modules are manufactured by

Contextual Info: UF 5400.UF 5408 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Ultrafast silicon rectifier diodes 8  9  1  9  9  -)  1

Contextual Info: 830nm Fiber-Coupled Diode Laser K83S02F-1.00W Key Features： Š 1W output power Š 62.5µm fiber core diameter Š 0.22NA Š 830nm wavelength Applications： Š Printing BWT Beijin g’s High Power Diode Laser Modules are manufactured b y adopting sp ecialized fiber-coupling techniques, resulting in volume