POWER DIODE 400V 10 A Search Results

100L2CZ

Abstract: 10GL2CZ 100L2C 10FL2CZ 10dl2cz
Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 10(D,F,G)L2CZ47A SWITCHING TYPE POWER SUPPLY APPLICATION. Unit in mm CONVERTER & CHOPPER APPLICATION. 10.3 MAX 03.2±O .2 • Repetitive Peak Reverse Voltage : V^^=200, 300, 400V • Average Output Recified Current : Io=10A

Contextual Info: AOK10B60D 600V, 10A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

E OFF

Abstract: 100°C AOB5B60D
Contextual Info: AOB5B60D 600V, 5A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

RG305

Abstract: diode 10a 400v
Contextual Info: AOT10B60D 600V, 10A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

Package

Abstract: AOTF15B60D
Contextual Info: AOTF15B60D 600V, 15A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

Package

Abstract: E OFF 100°C AOTF5B60D
Contextual Info: AOTF5B60D 600V, 5A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

Package

Abstract: E OFF 100°C AOT5B60D
Contextual Info: AOT5B60D 600V, 5A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

AOD5B60

Contextual Info: AOD5B60D 600V, 5A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

k10t60

Abstract: Q67040S4681 Q67040S4682 30A20V fast recovery diode 1000v 10A IKP10N60T K10T60 IKB10N60T IKP10N60T SWITCHING DIODE 600V 2A Q67040-S4681
Contextual Info: IKP10N60T IKB10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C

Contextual Info: AOK20B60D1 600V, 20A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

AOK30B60D1

Contextual Info: AOK30B60D1 600V, 30A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

k06t60

Abstract: igbt k06t60 IKA06N60T PG-TO220-3-31 Wr1c
Contextual Info: IKA06N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop ® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs

k06t60

Abstract: fast recovery diode 1000v 10A diode 400V 6A diode 6a 400v IKP06N60T 6A, 100v fast recovery diode datasheet ic 7822 FAST RECOVERY DIODE 200ns PG-TO-220-3-1
Contextual Info: IKP06N60T p TrenchStop series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs

APT30GP60JDQ1

Contextual Info: APT30GP60JDQ1 600V TYPICAL PERFORMANCE CURVES APT30GP60JDQ1 E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

APT0502

Abstract: 400v 15A igbt module
Contextual Info: APTGF30TL601G VCES = 600V IC = 30A @ Tc = 80°C Three level inverter NPT IGBT Power Module Application • Solar converter • Uninterruptible Power Supplies Features • Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz

Contextual Info: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

APT30GP60BDF1

Contextual Info: TYPICAL PERFORMANCE CURVES APT30GP60BDF1 APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

Contextual Info: APT30GP60JDF1 600V POWER MOS 7 IGBT E E A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

30GP60BDF1

Contextual Info: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

ic 7493

Abstract: data sheet IC 7493 7493 IC IC 7493 data sheet Datasheet of 7493 IC APT40GP60B2DQ2G definition of 7493 ic 7493 7493 APPLICATION 7493 integrated circuit
Contextual Info: APT40GP60B2DQ2 G 600V TYPICAL PERFORMANCE CURVES APT40GP60B2DQ2 APT40GP60B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

APT30GT60BRDL

Contextual Info: TYPICAL PERFORMANCE CURVES APT30GT60BRDL G 600V APT30GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers

IRGP4640D-E

Abstract: irgp4640d IRGP4640DPBF irgp4640
Contextual Info: IRGP4640DPbF IRGP4640D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C C IC = 40A, TC = 100°C tSC 5 s, TJ max = 175°C G VCE(on) typ. = 1.60V @ IC = 24A E n-channel G Gate Applications • Industrial Motor Drive

D15E65D2

Abstract: IDV15E65D2
Contextual Info: Diode RapidSwitchingEmitterControlledDiode IDV15E65D2 FullPAKwithEmitterControlledDiode Datasheet IndustrialPowerControl IDV15E65D2 EmitterControlledDiode RapidSwitchingEmitterControlledDiode  Features: A •

Contextual Info: Diode RapidSwitchingEmitterControlledDiode IDW15E65D2 EmitterControlledDiode Datasheet IndustrialPowerControl IDW15E65D2 EmitterControlledDiode RapidSwitchingEmitterControlledDiode  Features: A •