POWER DARLINGTON SCHEMATIC Search Results

BU323Z

Abstract: free ic 555 BU323Z-D transistor ignition circuit
Contextual Info: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is

BU323Z

Contextual Info: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360–450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is

MJ10009

Abstract: 1N4937 2N3762 MTP3055E
Contextual Info: ON Semiconductort MJ10009 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high–voltage,

MJE802

Contextual Info: MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON APPLICATIONS GENERAL PURPOSE SWITCHING ■ DESCRIPTION The MJE802 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration,

fw26025

Abstract: FW26025A fw26025a1 fw26025a1 equivalent MALAYSIA FW26025A1 parameters FW26025A1 st fw26025a1 fw26025a1 "transistor" transistor fw26025a1 ic 351
Contextual Info: FW26025A1 PNP POWER DARLINGTON TRANSISTOR • INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington

35N04G

Abstract: NJD35N04G NJD35N04T4G
Contextual Info: NJD35N04G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. http://onsemi.com Features • Exceptional Safe Operating Area

vbe 10v, vce 500v NPN Transistor

Abstract: transistor ignition circuit bu941
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM

35N04G

Abstract: schematic diagram electrical motor control
Contextual Info: NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. Features • Exceptional Safe Operating Area

NJD35N04G

Abstract: NJD35N04T4G
Contextual Info: NJD35N04G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. http://onsemi.com Features • Exceptional Safe Operating Area

tip137

Abstract: tip13 TIP13x tip131
Contextual Info: TIP131, TIP132 NPN , TIP137 (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. http://onsemi.com Features DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS, 70 WATTS

Contextual Info: BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM

Contextual Info: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BD336 SILICON PNP POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP DARLINGTON . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS

2N6668

Abstract: 2N6667 1N5825 2N6387 2N6388 MSD6100
Contextual Info: ON Semiconductor 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for general–purpose amplifier and low speed switching applications. PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60–80 VOLTS 65 WATTS • High DC Current Gain —

MJ3001

Abstract: mj3000
Contextual Info: SGS-THOMSON MJ2500/MJ2501 MJ3000/MJ3001 ÜLieTOOffäDOl COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are

BDX33C

Abstract: BDX33B BDX34B BDX34C
Contextual Info: BDX33B BDX33C BDX34B BDX34C  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They

1280 stepper motor

Abstract: 9735a DARLINGTON ARRAYS high current darlington transistor A-9734A A-9736 all diodes ratings darlington power transistor inductive sensor IC inductive sensor SYMBOL
Contextual Info: 2878 AND 2879 2878 2879 Data Sheet 29305.10B* AND QUAD HIGH-CURRENT DARLINGTON SWITCHES QUAD HIGH-CURRENT DARLINGTON SWITCHES These quad Darlington arrays are designed to serve as interface between low-level logic and peripheral power devices such as solenoids, motors, incandescent displays, heaters, and similar loads of up

Contextual Info: BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON • STMicroelectronics PREFERRED SALESTYPE . NPN DARLINGTON WITH INTEGRATED ANTI PARALLEL COLLECTOR-EMITTER DIODE . HIGH VOLTAGE CAPABILITY . HIGH DC CURRENT GAIN . U.L. RECOGNISED ISOWATT218 PACKAGE

Contextual Info: Si SGS-THOMSON HDoœiiLKerasiiüiDes TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

Contextual Info: BDX87C SILICON NPN POWER DARLINGTON TRANSISTOR . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTI PARALLEL COLLECTOR-EMITTER DIODE APPLICATION . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS 2 DESCRIPTION The BDX87C is a silicon Epitaxial-Base NPN

BD680

Abstract: BD677 BD678A BD679 BD680A BD681 BD677A BD678 BD679A BD682
Contextual Info: BD6xxx Complementary power Darlington transistors Features . • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications 3 ■ Linear and switching industrial equipment

GP-016

Contextual Info: 7003 , HIGH-VOLTAGE HIGH-CURRENT DARLINGTON ARRAY Containing seven high-voltage, high-current Darlington power drivers, the ULN7003A is designed for interlacing between TTL or MOS logic and a variety of peripheral loads such as relays, stepper motors, print heads, and lamps. The four open-collector Darlington outputs

Contextual Info: SGS-THOMSON [¡«æ iH iera *! 2N6035/2N6036 2N6038/2N6039 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . 2N6036 AND 2N6039 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N6038 and 2N6039 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in