POWER AMPLIFIER MMIC DESIGN HIGH EFFICIENCY Search Results

pin configuration of 8251

Abstract: block diagram 8251 RAYTHEON RMPA1902A-58
Contextual Info: RMPA1902A-58 PCS GaAs MMIC Power Amplifier PRODUCT INFORMATION Description Features The RMPA1902-58 is a monolithic high efficiency power amplifier for PCS CDMA personal communication system applications. The MMIC requires off-chip matching. The amplifier circuit design is a single ended configuration that

RAYTHEON

Abstract: RMPA1902-58 RMPA1902A-58
Contextual Info:
 R aytheon Commercial E lectronics RMPA1902A-58 PCS GaAs MMIC Power Amplifier The RMPA1902-58 is a monolithic high efficiency power amplifier for PCS CDMA personal communication system applications. The MMIC requires offchip matching. The amplifier circuit design is a single ended configuration

TQP7M4002

Abstract: LB514
Contextual Info: TQP7M4002 Advance Datasheet 3V Quad-Band E-GSM/GSM850/DCS/PCS Power Amplifier MMIC Description: Package Outline : The TQP7M4002 is a quad-band capable 3V power amplifier MMIC for GSM applications. Fabricated with a high-reliability InGaP GaAs HBT technology, the MMIC supports GPRS Class12 operation. By virtue of advanced design techniques,

pin configuration of 8251

Abstract: C17-C19 PA1900 RMPA1901-53 MURATA MW
Contextual Info: RMPA1901-53 PCS CDMA GaAs MMIC Power Amplifier Description Features The RMPA1901-53 is a monolithic high efficiency power amplifier for PCS CDMA applications. Performance parameters may be slightly adjusted by “tweaking” the off-chip matching components. The amplifier circuit design

Contextual Info: Raytheon Electronics Description The RMPA1902-53 is a monolithic high efficiency power amplifier for PCS CDMA personal communication system applications. The MMIC requires offchip matching. The amplifier circuit design is a single ended configuration that utilizes harmonic tuning for increased power added efficiency and

RAYTHEON

Abstract: C17-C19
Contextual Info:   5D\WKHRQ&RPPHUFLDO OHFWURQLFV RMPA1901-53 PCS CDMA GaAs MMIC Power Amplifier Description Features The RMPA1901-53 is a monolithic high efficiency power amplifier for PCS CDMA applications. Performance parameters may be slightly adjusted by “tweaking” the off-chip matching components. The amplifier circuit design is

Contextual Info: Raytheon Electronics The RMPA0912-53 is a monolithic high efficiency power amplifier for TACS/CDMA dual mode applications in the 887 to 925 MHz frequency band. The MMIC requires off-chip matching. The amplifier circuit design is a single ended configuration that utilizes harmonic tuning for increased power

dual-gate

Contextual Info: Texas Instruments TGA8024 Monolithic X-Band Dual-Gate Driver Amplifier Features • ■ ■ ■ 0.5 watt output power Dual-gate for precise output power control Good input SWR 1.5:1 for packaged MMIC Well-behaved insertion phase under varying bias ■ High gain to simplify circuit design

mmds down converter

Abstract: HMC394LP4 Crystal Radio MMIC Downconverter ku band HMC409 c-Band mmic core chip ku vsat "buffer amplifier" HMC394 HMC406MS8G HMC407MS8G
Contextual Info: OFF-THE-SHELF INSIDE. HITTITE MICROWAVE CORPORATION AUTUMN 2001 1 Watt and 0.5 Watt Power Amplifiers at 1.9 GHz, 2.4 GHz, 3.5 GHz and 5.8 GHz Now Available! New High Efficiency MMIC GaAs InGaP HBT Designs for +3V and +5V Platforms Hittite is expanding its GaAs InGaP HBT product line by adding eight new power

A29200

Abstract: power amplifier mmic
Contextual Info: RMPA29200 29-31 GHz 2 Watt Power Amplifier MMIC ADVANCED INFORMATION Description Features The RMPA29200 is a high efficiency power amplifier designed for use in Sat-Com, point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA29200 is a 3-stage

PM2104

Contextual Info: P œ M A O C N O I F I L I T H C I C P M 2 1 f c S Ü Power Amp W 1400 to 2000 MHz Operation Features • • • • 1.0 Watts 30 dBm Output Power 50% Efficiency SOIC 8 Pin Package Multiple Biasing Modes Applications • Portable Wireless Communications

Contextual Info: RMPA19000 18-22 GHz Power Amplifier MMIC PRODUCT INFORMATION Description Features The Fairchild Semiconductor's RMPA19000 is a high efficiency driver amplifier designed for use in point to point radio, point to multi-point communications and other millimeter wave applications. The RMPA19000 is a 3-stage

3000 watt power amplifier circuit diagram

Abstract: 15 watt power supply circuit diagram power amplifier mmic
Contextual Info: RMPA29000 27-30 GHz 1 Watt Power Amplifier MMIC Description Features The Fairchild Semiconductor RMPA29000 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA29000 is a 3stage GaAs MMIC amplifier utilizing Fairchild Semiconductor's advanced 0.15µm gate length Power PHEMT

4000 WATT amplifier diagram

Abstract: power amplifier mmic
Contextual Info: RMPA27000 27 - 29 GHz 1.8 Watt Power Amplifier MMIC Description Features The Fairchild Semiconductor RMPA27000 is a high efficiency power amplifier designed for use in Sat-Com, point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The

Contextual Info: # 425430398 RMDA29000 27-31 GHz Driver Amplifier MMIC ADVANCED INFORMATION Description Features The Fairchild Semiconductor's RMDA29000 is a high efficiency driver amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications.

Contextual Info: RMPA39000 37-40 GHz GaAs MMIC Power Amplifier PRODUCT INFORMATION Description Features The Fairchild Semiconductor RMPA39000 is a high efficiency power amplifier designed for use in point to point radio, point to multi point communications, LMDS and other millimeter-wave applications. The RMPA39000 is a 3stage GaAs MMIC amplifier chip utilizing Fairchild Semiconductor's advanced 0.15 µm gate length Power PHEMT

Pacific Monolithics

Abstract: power amplifier mmic design high efficiency PM2102
Contextual Info: PACIFIC PHZ10S Power Amp MONOUTHICS 800 to 950 MHz Operation Features • • • • 1.4 Watts 31.5 dBm Output Power 60% Efficiency SOIC 8 Pin Package Multiple Biasing Modes Applications • Portable Wireless Communications • Analog Cellular & Cordless Telephone

RMDA25000

Contextual Info: RMDA25000 23-28 GHz Driver Amplifier MMIC ADVANCED INFORMATION Description Features The Fairchild Semiconductor's RMDA25000 is a high efficiency driver amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMDA25000 is a 3stage GaAs MMIC amplifier utilizing Fairchild Semiconductor's advanced 0.15µm gate length Power PHEMT

Contextual Info: GaAs MMIC VSAT Power Amplifier, 1.4W, 14.0-14.5 GHz AM42-0002 AM42-0002 GaAs MMIC VSAT Power Amplifier, 1.4W 14.0 - 14.5 GHz Features • • • • • • CR-15 High Linear Gain: 22 dB Typ. High Saturated Output Power: +31.5 dBm Typ. High Power Added Efficiency: 22% Typ.

AM42-0041

Abstract: CR-15 IDS500
Contextual Info: GaAs MMIC VSAT Power Amplifier, 0.5W, 14.0-14.5 GHz AM42-0041 AM42-0041 GaAs MMIC VSAT Power Amplifier, 0.5W 14.0 - 14.5 GHz Features • • • • • CR-15 High Linear Gain: 28 dB Typ. High Saturated Output Power: +28 dBm Typ. High Power Added Efficiency: 22% Typ.

Contextual Info: April 28, 2014 MACOM Launches New X-Band High Power Amplifiers for Commercial Radar and Communication Applications Two-stage and three-stage MMIC Amplifiers Boast up to 41dBm of Saturated Pulsed Output Power and 40% Power Added Efficiency LOWELL, Mass.- BUSINESS WIRE - M/A-COM Technology Solutions Inc. ("MACOM"), a leading supplier of high performance

45580

Abstract: 1gg6-8002 4433 fet tca 761 1gg6 8002 amplifier HMMC-5618 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC
Contextual Info: Agilent HMMC-5617 6–18 GHz Medium Power Amplifier 1GG6-8002 Data Sheet Features • High efficiency: 11% @ P–1 dB typical • Output power, P–1 dB: 18 dBm typical • High gain: 14 dB typical • Flat gain response: ±0.5 dB typical • Low input/output VSWR:

BGA2450

Abstract: BP317 ISM2400
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 BGA2450 MMIC power amplifier Objective specification 2000 July 14 Philips Semiconductors Objective specification MMIC power amplifier BGA2450 PINNING FEATURES • Low-voltage operation 3 V PIN • High power-added efficiency (35 %)

RMDA29000

Abstract: RMPA29200 2 Watt Power Amplifier
Contextual Info: RMPA29200 29–31 GHZ 2 Watt Power Amplifier MMIC General Description Features The Fairchild Semiconductor’s RMPA29200 is a high efficiency power amplifier designed for use in point to point and point to multi-point radios, and various communications applications. The RMPA29200 is a 3-stage GaAs