POWER AMPLIFIER 4 GHZ Search Results

soqpsk

Abstract: ku-band 15 watt SSPA RF power amplifier MHz
Contextual Info: Solid State Power Amplifier High Power, Broadband, Ku Band Solid State RF Amplifier Aethercomm Part Number SSPA 14.4-15.5-4 is a high • Operation from 14.4 to 15.5 GHz power, Ku Band solid state power amplifier that operates • 4 Watts Output Power Min

high power microwave transmitter

Abstract: microwave sensor 145mm power amplifier 12 GHZ High Power Microwave Device 90-GHz
Contextual Info: HBH 8.0 – 12.0 GHz High Power Amplifier Microwave GmbH HA6011/4 General Description The HA6011/4 is a high power amplifier modul for applications in Ku-Band. The high gain and high output power makes this device an ideal choice as a high power amplifier for

Contextual Info: Amplifier, Power, 1.6W 9.5-14.5 GHz MAAPGM0070-DIE Rev A Advance Datasheet Features ♦ 1.6 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0070-DIE is a 4-stage 1.6 W power amplifier with

Contextual Info: Amplifier, Power, 1.6W 9.5-14.5 GHz MAAPGM0070-DIE 903279 — Advanced Datasheet Features ♦ 1.6 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0070-DIE is a 4-stage 1.6 W power amplifier with

Contextual Info: Amplifier, Power, 1.3W 17.7-19.7 GHz MAAPGM0072-DIE Rev A Advance Datasheet Features ♦ 1.3 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0072-DIE is a 4-stage 1.3 W power amplifier with

Contextual Info: Amplifier, Power, 1.6W 10.0-13.25 GHz MAAPGM0070-DIE Rev A Advance Datasheet Features ♦ 1.6 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0070-DIE is a 4-stage 1.6 W power amplifier with

Contextual Info: HMC327MS8G / 327MS8GE v04.0607 6 GaAs InGaP HBT MMIC POWER AMPLIFIER, 3 - 4 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 3.3 - 3.6 GHz applications: Gain: 21 dB • Wireless Local Loop 45% PAE Saturated Power: +30 dBm

AN3016

Abstract: MAAP-000072-PKG003 MAAP-000072-SMB003
Contextual Info: Amplifier, Power, 1 W 17.7-19.7 GHz MAAPGM0072-DIE Rev B Preliminary Datasheet Features ♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0072-DIE is a 4-stage 1 W power amplifier with on-chip

MAAP-000070-PKG003

Abstract: AN3016 MAAP-000070-MCH000 MAAP-000070-SMB003
Contextual Info: Amplifier, Power, 1.9W 10.0-13.25 GHz MAAPGM0070-DIE Rev B Preliminary Datasheet Features ♦ 1.9 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0070-DIE is a 4-stage 1.9 W power amplifier with on-chip

MCR03EZHUJ000

Abstract: S1872 s1872a S1898 s1901
Contextual Info: PRELIMINARY DATA SHEET SKY65129-11: 1.98-2.02 GHz High Linearity 4 W Power Amplifier Applications Description • Satellite phones/SATCOM Skyworks SKY65129-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power,

signal generator

Abstract: AWT6252 AWT6274 AWT6275 E4419B E9301H agilent HBT transistor series
Contextual Info: Application Note WCDMA IMT/PCS 4 mm x 4 mm Power Amplifier Modules Rev 0 RELEVANT PRODUCTS • • • • AWT6252 AWT6274 AWT6275 AWT6276 GENERAL DESCRIPTION The ANADIGICS 4 mm x 4 mm hetero-junction bipolar transistor HBT power amplifier modules designed

MAAP-000072-PKG003

Abstract: MAAP-000072-SMB003 MAAP-000072-SMB004 S2083
Contextual Info: RoHS Compliant MAAP-000072-PKG003 Amplifier, Power, 1.3W 17.7-19.7 GHz Rev A Preliminary Datasheet Features ♦ 1.3 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process YYWW AP072G XXX MACOM Description The MAAP-000072-PKG003 is a 4-stage 1.3 W power amplifier

2 Watt rf Amplifier

Abstract: HMC139 5 watt microwave amplifier 10 watt 16 ohm power amplifier "15 GHz" power amplifier 10 watt D000G4D
Contextual Info: ^□0 4 12 5 D00 0G4 D ÖSb IHTM HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC139 JANUARY 1994 Features ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 4 TO 7 GHz 2.5 WATT OUTPUT POWER General Description The HMC139 is a GaAs MMIC amplifier

AWT6282

Abstract: E4419B E9301H agilent HBT transistor series
Contextual Info: Application Note UMTS 1700/IMT/PCS 4 mm x 4 mm Power Amplifier Modules Rev 1 Relevant products • AWT6278 • AWT6279 • AWT6282 General Description The ANADIGICS 4 mm x 4 mm hetero-junction bipolar transistor HBT power amplifier modules designed UMTS High Band, and operates from a single lithiumion (Li-ion) battery. The amplifier input and output

Contextual Info: CMM-4 2.0 to 20.0 GHz GaAs MMIC Amplifier □ Flat Gain □ +16 dBm P.! dB □ Small Size: 39 x 74 mils □ Directly Cascadable □ Self-Biased □ Single Power Supply □ Guaranteed Performance Celeritek CMM-4 GaAs MMIC Amplifier The CMM-4 is a 2 to 20 GHz GaAs MMIC amplifier.

DM6030HK

Abstract: XP1072-BD
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD January 2009 - Rev 29-Jan-09 Features Ka-Band 4 W Power Amplifier 22.0 Small Signal Gain 35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: SPA-110-30-04-SMA DATA SHEET High Power Amplifier at 4 Watt P1dB Operating From 8.5 GHz to 11 GHz with 30 dB Gain, 45 dBm IP3 and SMA SPA-110-30-04-SMA is a 4 W X-band coaxial power amplifier designed for high linearity applications in the 8.5 to 11 GHz frequency range. The amplifier offers

DC 0509

Abstract: 327MS8GE H327 HMC327MS8G HMC327MS8GE
Contextual Info: HMC327MS8G / 327MS8GE v05.0509 11 GaAs InGaP HBT MMIC 1/2 W POWER AMPLIFIER, 3 - 4 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 3.3 - 3.6 GHz applications: High Gain: 21 dB • Wireless Local Loop Output P1dB: +27 dBm

Contextual Info: RF5633 RF5633 3.3 GHz to 3.6 GHz Linear Power Amplifier 3.3 GHz TO 3.6 GHz LINEAR POWER AMPLIFIER Package Style: QFN, 24-Pin, 4 mm x 4 mm x 0.9 mm Features  Single 5.0 V Power Supply  34 dB Small Signal Gain Typ.  Supports Low Gain Mode  2.5% EVM WiMAX

Contextual Info: RMWP26001 24-26.5 GHz Power Amplifier MMIC PRODUCT INFORMATION Description Features The RMWP26001 is a 4-stage GaAs MMIC amplifier designed as a 24 to 26.5 GHz Power Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In

long range gold detector circuit diagram

Contextual Info: RMWP38001 37-40 GHz Power Amplifier MMIC PRODUCT INFORMATION Description Features The RMWP38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Power Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction

RAYTHEON

Abstract: RMWP26001
Contextual Info: RMWP26001 24-26.5 GHz Power Amplifier MMIC PRODUCT INFORMATION Description Features The RMWP26001 is a 4-stage GaAs MMIC amplifier designed as a 24 to 26.5 GHz Power Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In

power amplifier mmic

Contextual Info: RMWP23001 21-24 GHz Power Amplifier MMIC PRODUCT INFORMATION Description Features The RMWP23001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 24 GHz Power Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction

RMWP23001

Contextual Info: RMWP23001 21–24 GHz Power Amplifier MMIC General Description Features The RMWP23001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 24 GHz Power Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other