PO C 90 Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 2 5 .5 d B m , Single Carrier Level • High po w e r

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 2 5 .5 d B m , Single Carrier Level • High po w e r

RLD78MRA6

Contextual Info: RLD78MRA6 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm ／ Part No. 780nm Wavelength λp （nm） Absolute maximum ratings （Tc=25° C） Electrical and optical characteristics （Tc=25° C） Po （mW） Topr PO VR Iop η Vop Im

RLD78MFA1

Contextual Info: RLD78MFA1 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm ／ Part No. 780nm Wavelength λp （nm） Absolute maximum ratings （Tc=25° C） Electrical and optical characteristics （Tc=25° C） Po （mW） Topr PO VR Iop η Vop Im

RLD2WMFV2

Abstract: RLD2WMUL3
Contextual Info: RLD2WMFV2 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm ／ Part No. 780nm Wavelength λp （nm） Absolute maximum ratings （Tc=25° C） Electrical and optical characteristics （Tc=25° C） Po （mW） Topr PO VR Iop η Vop Im

RLD2WM

Contextual Info: RLD78NZM6 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm ／ Part No. 780nm Wavelength λp （nm） Absolute maximum ratings （Tc=25° C） Electrical and optical characteristics （Tc=25° C） Po （mW） Topr PO VR Iop η Vop Im

Contextual Info: RLD2BPNK4 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm ／ Part No. 780nm Wavelength λp （nm） Absolute maximum ratings （Tc=25° C） Electrical and optical characteristics （Tc=25° C） Po （mW） Topr PO VR Iop η Vop Im

Contextual Info: RLD2BPND1 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm ／ Part No. 780nm Wavelength λp （nm） Absolute maximum ratings （Tc=25° C） Electrical and optical characteristics （Tc=25° C） Po （mW） Topr PO VR Iop η Vop Im

780nmLD

Contextual Info: RLD4BPMP1 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm ／ Part No. 780nm Wavelength λp （nm） Absolute maximum ratings （Tc=25° C） Electrical and optical characteristics （Tc=25° C） Po （mW） Topr PO VR Iop η Vop Im

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r

0C314

Abstract: H7 RF IC-311 SP 6554 A adcb 27 TI BB cross MC68HC11D3 MC68HC711D3 S002D OC310
Contextual Info: MC68HC11D3RG/AD MC68HC11D3 MC68HC711D3 PROGRAMMING REFERENCE GUIDE M MOTOROLA 192 BYTES STATIC RAM MULTIPLEXED ADDRESS/DATA BUS • A8 A15À A D 7 - -ADO À y y y DATA DIRECTION REGISTER C DATA DIRECTION REGISTER B PO RTC PO RTB A A

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-10L Features • H igh po w e r - IM 3 = -45 d B c a t Po = 29 dB m , - S in g le c a rrie r level • H igh po w e r - P 1dB = 4 0 .5 d B m at 12.7 G H z to 13.2 G H z • H igh gain - G 1 b = 6 .0 dB at 12.7 G H z to 13.2 G H z

38285824

Abstract: 927176-2
Contextual Info: METRIC DO NOT SCALE DIMENSIONS IN mm T H IR D A N G LE P R O JE C T IO N NOTES SNAP-IN THERE PO LARIZERS PN. 15 NO WINDOW F OR INDICATION OF SPECIAL-HEAD FIR ST IS WITH OR 927637-2 PO LARIZERS CAN B E AT TH IS APPLIED . END IN 10 AND 14 P O S . HEADERS PO SITIO N.

AC380

Abstract: Z0-28 2500 watt amplifier 59C82 AN610
Contextual Info: 7 - 7 4 - 0 9 - 0 1 8/90 pO aU E H R ' C O M PO N EN TS 2225-K M artin Avenue, Santa Clara, CA 95050 FA X 408 492-1400 (4 0 8 )4 9 2 -1 5 0 0 TO_8 Cascadabie Amplifier ^ AC380 (Typical Values) ( Outline Drawings') Ultra Low Noise Figure .

Contextual Info: TOSHIBA 2SC3147 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 147 VHF BAND PO W ER AM PLIFIER APPLICATIONS Unit in mm 18.4±Q5 • Output Power • : High Efficiency : Po = 50W Min. (f = 175MHz, V ee = 12.5V, = 70% (Typ.) VC, —70% (Typ.)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r - PidB = 39-5 d B m at 5.9 G H z to 6.4 GHz

UL 1569

Contextual Info: www.hermeticswitch.com PO Box 2220 Chickasha, OK 73023 Phone: 405 224-4046 Fax: (405) 224-9423 ISO 9001 Registered Part Number PRX+1900 Contact Form C SPDT Switch Configuration Rev. C Cylindrical Proximity Sensor Features Advantages • Hermetically sealed contacts

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 3 1 .5 d B m , Single Carrier Level • High po w e r - PidB = 4 2 .5 d B m at 5.9 G H z to 6.4 GHz

vqe 13

Abstract: APT35G60BN APT35G50BN APT35G60
Contextual Info: D • 0 5 5 ? ^ OOOObSl MêT aa d v a n c e d W æ PO W ER 'T C .V M rÆ Ê Ê T e c h n o l o g y APT35G60BN APT35G50BN PO W ER 3^0 « A V P 600V 500V 35A 35A M O S IV IG B T N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

Contextual Info: www.hermeticswitch.com PO Box 2220 Chickasha, OK 73023 Phone: 405 224-4046 Fax: (405) 224-9423 ISO 9001 Registered PRX+8300 Part Number Contact Form C SPDT Switch Configuration Rev. C Low-Profile Proximity Sensor Features Advantages • Hermetically sealed contacts

Contextual Info: www.hermeticswitch.com PO Box 2220 Chickasha, OK 73023 Phone: 405 224-4046 Fax: (405) 224-9423 ISO 9001 Registered PRX+1300 Part Number C Contact Form Switch Configuration SPDT Rev. C Press-Fit Proximity Sensor for Burglar Alarm Industry Features Advantages

LFT 3A

Abstract: HA 1329 2SD1329
Contextual Info: HITACHI 2SD1329 R SILICON NPN TRIPLE DIFFUSED LOW FREQ UEN CY PO W ER AMPLIFIER PO W ER SWITCHING I. Base 2 C ollector (R a n g e 3 E m m er (D im en sio n s in m m ) {JE D E C TO-220AB} • A BSO LU T E MAXIMUM RATINGS (Ta=25°C) Item Symbol MAXIMUM COLLECTOR DISSIPATION

Contextual Info: 44 P C B Terminal strips Terminal strips, standard parts, 2 solder p in s/po le Terminal strips, standard parts, 2 solder pins/pole Terminal strips, grey, standard parts, 2 solder p in s/po le 0.08 - 0.5 mm2 | A W G 28 - 20 in adjacent positions 0.75 mm2/ A W G 18

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-10L TECHNICAL DATA FEATURES : • H IG H G AIN H IG H PO W ER IM 3 = - 4 5 d B c at Po = 29 dBm , GidB = 6.0 dB at 10.7 G H z to 11.7 G H z B R O A D B A N D IN T E R N A LL Y M A T C H E D S ingle C arrier Level