PO 168 Search Results

APC UPS CIRCUIT DIAGRAM

Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM MAB8051 MAB8051AH-2 p MAF80A51AH-2 P25AD APC UPS repair UPS APC APC UPS CIRCUIT BOARD
Contextual Info: MAB8031AH-2 MAB8051AH-2 PO. 0 - PO. 7 lllllll IllH W April 1989 PORT 0 PO RT 2 D R IVER S D R IV E R S iE IE RAM ! = i > ¥ "T T 128x8 I ROM PORT 2 LATCH PORT 0 LATCH £ 4K x 8 $ 3E 3E STACK POINTER PHILIPS PROGRAM ADDRESS REGISTER JL _SZ_ v_ <^=n v y PCON

2N5192

Contextual Info: 2N5192 NPN Power Transistor For Use In Power Amplifier And Switchi. 1 of 1 Home Part Number: 2N5192 Online Store 2N5192 Diodes NPN Transistors Po w er Trans is t o r For Us e In Po w er Am plifier And

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 2 5 .5 d B m , Single Carrier Level • High po w e r

Contextual Info: 8 TM 3M 7 6 5 4 3 2 1 NOTES MEDIUM FLEX LIFE FLAT CABLE, HF539 1. MATERIAL: A PRIMARY INSULATION: HALOGEN FREE POLYOLEFIN PO). B) CONDUCTORS: 28 AWG, 19 X 40 AWG (19 X , 0.079), TINNED STRANDED COPPER. .050" 28 AWG STRANDED, MEDIUM FLEX LIFE, HALOGEN FREE PO

Contextual Info: SK3430 REVISIONRECORD ECO 16815 ECO 24652 mmi 9 -2 1 K PO SITRO NC M D USTRCS BELIEVES TH E DATA ON T H 6 DRMMNG TO B E RELIABLE, SIN CE TH E TECH M CAL INFORMATION IS O VEN FR EE O F CHARGE, TH E USER EM PLO YS SUCH INFORMATION AT H 6 OWN DISCRETION AND RISK. PO SH R O N C INDUSTRIES ASSU M ES NO

PO 168

Abstract: 8-32-NC-3A Transistor 168 NTE338 8-32NC-3A
Contextual Info: NTE338 Silicon NPN Transistor RF Power Amp Driver PO = 20W Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48V

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 3 1 .5 d B m , Single Carrier Level • High po w e r - PidB = 4 2 .5 d B m at 5.9 G H z to 6.4 GHz

Contextual Info: Systems in Silicon Contact Information: RTD USA 814-234-8087 200 Innovation Blvd., PO Box 906 State College, Pennsylvania 16804-0906 Fax: E-mail: URL: 814 234-5218 sales@rtdusa.com www.rtdusa.com AMD Embedded Processor Division, FusionE86 Support

Contextual Info: SK3431 Eli PO SITRO NC M D USTRCS BELIEVES TH E DATA ON T H 6 DRMMNG TO B E RELIABLE, SIN CE TH E TECH M CAL INFORMATION IS GIVEN FR EE O F CHARGE, TH E USER EM PLO YS SU CH INFORMATION AT H 6 OWN DSCRETION AND RISK. PO SfTRO NC INDUSTRIES ASSU M ES NO R E SPO N S B U T Y FOR RESULTS OBENNED O R DAMAGES

kaschke 094

Abstract: kaschke 049 kaschke 071 KASCHKE 097 034.620 kaschke kaschke 094 094 930 Kaschke 064 kaschke sp-vz kaschke DR 796 kaschke dr-gr
Contextual Info: Automotive Electronics Industrial Electronics Entertainment Electronics Festinduktivitäten – Fixed Inductors Consumer Goods Industry Telecommunications Lighting Electronics GMBH & CO. WWW.KASCHKE.DE KASCHKE KG GMBH & CO. PO box 2542 • 37015 Göttingen · Germany

P6KE400CP

Abstract: P6KE440CP P6KE15CP P6KE36CP P6KE27CP P6KE39CP P6KE12CP P6KE150P
Contextual Info: P6KE6V8P,A/440P,A P6KE6V8CP,A/440CP,CA iiO lT ^ O iD O i TRANSIL FEATURES • PE AK PULSE PO W ER = 600 W @ 1 ms. . B R E A K D O W N VO LTA G E R AN G E : F ro m 6 V 8 to 440 V. ■ UNI AND BID IR E C TIO N A L TYP ES. . LO W C LAM PIN G FACTOR. ■ F A S T R ES PO N SE TIM E:

049* kaschke

Abstract: kaschke rds 049.903 EN60938-2 kaschke rds 25 KASCHKE 043.200 049.651 kaschke 043.202 049.659 KASCHKE 049.651
Contextual Info: Automotive Electronics Industrial Electronics Entertainment Electronics Stromkompensierte Ringkerndrosseln Common mode toroid chokes Consumer Goods Industry Telecommunications Lighting Electronics GMBH & CO. WWW.KASCHKE.DE KASCHKE KG GMBH & CO. PO box 2542 • 37015 Göttingen · Germany

Contextual Info: 6/91 W nauG H Fi 2225-K Martin Avenue, Santa Clara, CA 95050 FAX 1 CO M PO NENTS ù - ì j o- d Cascadable Amplifier AC3036 Typical Values Ultra Broad Band . Medium Gain .

AS-207

Contextual Info: — - td 'k W‘ COMPONENTS cn U G H F i ri Typical Values A PO H 7R A b lU / O 10 TO 2000 MHz JO-8 CASCADABLE _ AC2075 Low Noise Figure . <2.7 dB

AC305

Abstract: Insert MA 1567
Contextual Info: y^nauEññ 8/93 _ 2225-KMartin Avenue, Santa Clara, CA 95050 FAX CO M PO NEN TS ¡B ll ; TO-8 Cascadable Amplifier Outline Drawings I AC305 Typical Values Low Noise F ig u re .

Contextual Info: FLM7785-4F - C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 36.5dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm

RD02MUS1

Abstract: transistor rf m 1104 mosfet 840 datasheet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.

impeder

Abstract: kaschke ferrite material 200B 8200C kaschke 25 impeder core kaschke 26
Contextual Info: Automotive Electronics Industrial Electronics Impeder für induktives HF-Schweissen Impeder for inductive welding Entertainment Electronics Consumer Goods Industry Telecommunications Lighting Electronics GMBH & CO. WWW.KASCHKE.DE KASCHKE KG GMBH & CO. PO box 2542 • 37015 Göttingen · Germany

RD02MUS1

Abstract: T112 transistor marking zg RD02MVS1
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.

AS105

Abstract: AS-105
Contextual Info: — -rJ 'k WnnuEnn ' rev. 10/01 CO M PO NENTS i AC105 1 TO 150 MHz TO-8 CASCADABLE AMPLIFIER AC105 Typical Values A C 105 Low Noise F ig u re . 2.5 dB Medium Output Power.

transistor rf m 1104

Abstract: transistor equivalent D 1047 RD02MUS1 transistor 2439 transistor equivalent 1047 S 170 MOSFET TRANSISTOR transistor 4317 RD02MSU1
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1 Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po

pra7r7s

Abstract: 01m 927 321 rectifier d 355 n 2000 powerex kt kt 605
Contextual Info: PO WER E X IN C j> H 7Ecì4b51 0DDlfl73 fl • ^ 3 Rectifier Assemblies-Air Cooled Assembly Module Type PRA6R620_30 _30 _30 PRA6R620_40 _40 PRA6R620_ 50 PRA7R720_ 06 _06 _06 PRA7R720 _ 09 _09 PRA7R720_ 12 PRA7R7S0_08

FET 4016

Abstract: FLM4450-12F
Contextual Info: FLM4450-12F -C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 41 -506171 Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: riadd = 39% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm

nte360

Contextual Info: NTE360 Silicon NPN Transistor RF Power Output PO = 40W @ 175MHz Description: The NTE360 is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range. Features: • Specified 28 Volt, 175MHz Characteristics: Output Power = 40 Watts