PO 168 Search Results

APC UPS CIRCUIT DIAGRAM

Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM MAB8051 MAB8051AH-2 p MAF80A51AH-2 P25AD APC UPS repair UPS APC APC UPS CIRCUIT BOARD
Contextual Info: MAB8031AH-2 MAB8051AH-2 PO. 0 - PO. 7 lllllll IllH W April 1989 PORT 0 PO RT 2 D R IVER S D R IV E R S iE IE RAM ! = i > ¥ "T T 128x8 I ROM PORT 2 LATCH PORT 0 LATCH £ 4K x 8 $ 3E 3E STACK POINTER PHILIPS PROGRAM ADDRESS REGISTER JL _SZ_ v_ <^=n v y PCON

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 2 5 .5 d B m , Single Carrier Level • High po w e r

Contextual Info: 8 TM 3M 7 6 5 4 3 2 1 NOTES MEDIUM FLEX LIFE FLAT CABLE, HF539 1. MATERIAL: A PRIMARY INSULATION: HALOGEN FREE POLYOLEFIN PO). B) CONDUCTORS: 28 AWG, 19 X 40 AWG (19 X , 0.079), TINNED STRANDED COPPER. .050" 28 AWG STRANDED, MEDIUM FLEX LIFE, HALOGEN FREE PO

Contextual Info: SK3430 REVISIONRECORD ECO 16815 ECO 24652 mmi 9 -2 1 K PO SITRO NC M D USTRCS BELIEVES TH E DATA ON T H 6 DRMMNG TO B E RELIABLE, SIN CE TH E TECH M CAL INFORMATION IS O VEN FR EE O F CHARGE, TH E USER EM PLO YS SUCH INFORMATION AT H 6 OWN DISCRETION AND RISK. PO SH R O N C INDUSTRIES ASSU M ES NO

PO 168

Abstract: 8-32-NC-3A Transistor 168 NTE338 8-32NC-3A
Contextual Info: NTE338 Silicon NPN Transistor RF Power Amp Driver PO = 20W Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48V

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 3 1 .5 d B m , Single Carrier Level • High po w e r - PidB = 4 2 .5 d B m at 5.9 G H z to 6.4 GHz

Contextual Info: SK3431 Eli PO SITRO NC M D USTRCS BELIEVES TH E DATA ON T H 6 DRMMNG TO B E RELIABLE, SIN CE TH E TECH M CAL INFORMATION IS GIVEN FR EE O F CHARGE, TH E USER EM PLO YS SU CH INFORMATION AT H 6 OWN DSCRETION AND RISK. PO SfTRO NC INDUSTRIES ASSU M ES NO R E SPO N S B U T Y FOR RESULTS OBENNED O R DAMAGES

kaschke 094

Abstract: kaschke 049 kaschke 071 KASCHKE 097 034.620 kaschke kaschke 094 094 930 Kaschke 064 kaschke sp-vz kaschke DR 796 kaschke dr-gr
Contextual Info: Automotive Electronics Industrial Electronics Entertainment Electronics Festinduktivitäten – Fixed Inductors Consumer Goods Industry Telecommunications Lighting Electronics GMBH & CO. WWW.KASCHKE.DE KASCHKE KG GMBH & CO. PO box 2542 • 37015 Göttingen · Germany

049* kaschke

Abstract: kaschke rds 049.903 EN60938-2 kaschke rds 25 KASCHKE 043.200 049.651 kaschke 043.202 049.659 KASCHKE 049.651
Contextual Info: Automotive Electronics Industrial Electronics Entertainment Electronics Stromkompensierte Ringkerndrosseln Common mode toroid chokes Consumer Goods Industry Telecommunications Lighting Electronics GMBH & CO. WWW.KASCHKE.DE KASCHKE KG GMBH & CO. PO box 2542 • 37015 Göttingen · Germany

AC305

Abstract: Insert MA 1567
Contextual Info: y^nauEññ 8/93 _ 2225-KMartin Avenue, Santa Clara, CA 95050 FAX CO M PO NEN TS ¡B ll ; TO-8 Cascadable Amplifier Outline Drawings I AC305 Typical Values Low Noise F ig u re .

Contextual Info: FLM7785-4F - C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 36.5dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm

RD02MUS1

Abstract: transistor rf m 1104 mosfet 840 datasheet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.

impeder

Abstract: kaschke ferrite material 200B 8200C kaschke 25 impeder core kaschke 26
Contextual Info: Automotive Electronics Industrial Electronics Impeder für induktives HF-Schweissen Impeder for inductive welding Entertainment Electronics Consumer Goods Industry Telecommunications Lighting Electronics GMBH & CO. WWW.KASCHKE.DE KASCHKE KG GMBH & CO. PO box 2542 • 37015 Göttingen · Germany

RD02MUS1

Abstract: T112 transistor marking zg RD02MVS1
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.

pra7r7s

Abstract: 01m 927 321 rectifier d 355 n 2000 powerex kt kt 605
Contextual Info: PO WER E X IN C j> H 7Ecì4b51 0DDlfl73 fl • ^ 3 Rectifier Assemblies-Air Cooled Assembly Module Type PRA6R620_30 _30 _30 PRA6R620_40 _40 PRA6R620_ 50 PRA7R720_ 06 _06 _06 PRA7R720 _ 09 _09 PRA7R720_ 12 PRA7R7S0_08

nte360

Contextual Info: NTE360 Silicon NPN Transistor RF Power Output PO = 40W @ 175MHz Description: The NTE360 is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range. Features: • Specified 28 Volt, 175MHz Characteristics: Output Power = 40 Watts

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 4450-45SL MICROWAVE SEM ICONDUCTOR TECHNICAL DATA FEATURES • LOW ITERMODULATION DISTORTION ■ IM3=-45dBc at Po=35.5dBm ■ HIGH GAIN GldB=9.5dB at 4.4GHz to 5.0GHz Single Carrier Level ■ BROAD BAND IMTERNALLY MATCHED

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-45SL MICROWAVE SEM ICONDUCTOR TECHNICAL DATA FEATURES • LOW ITERMODULATION DISTORTION ■ IM3=-45dBc at Po=35.5dBm ■ HIGH GAIN GldB=9.5dB at 4.4GHz to 5.0GHz Single Carrier Level ■ BROAD BAND IMTERNALLY MATCHED

terostat -8550

Abstract: terostat -8550 cleaner vehicle rain sensor POLYOL inductive slot sensor reclaimer car sensor ignition DIODE MSDS pdf of project of arc welding machine terostat
Contextual Info: Fiber Optic Traffic Sensors SP/SPZ Measurement Specialties, Inc. PO Box 799 Valley Forge, PA 19482 USA Tel.: 610 650.1500 Fax.: 610 650-1509 Email: sensors@msiusa.com www.msiusa.com Sensor Line - Gesellschaft für optoelektronische Sensoren mbH In der Scherau 1

Contextual Info: TECHNICAL DATA SHEET 1/2 STRAIGHT SQUARE FLANGE SEAL RECEPTACLE R185.405.300 Series : 7-16 M3 REAR MOUNTING All dimensions are in mm. . po . an COMPONENTS BODY CENTER CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS - PLATING µm MATERIALS BRASS BERYLLIUM COPPER

Contextual Info: S9G07A FEATURES • LOW DISTORTION Pad] = *74dBc@ Po * ■ ■ NON-MATCHED TYPE 29dBm HIGH GAIN G id B = 14 dB ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta = 251Ç CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX. dBm 32.5 33.5 - 13

FET K 1358

Abstract: MGF0916A gp 752 9452 smd
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm

MGF0913A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. FIT-621-2 Construction 1) Tubing Type Adhesive Lined Heat Shrinkable Tubing 2) Tubing Material Dual Wall Flexible PO w/Thick Wall Adhesive