PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., FZT955 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps

BFX36

Contextual Info: BFX36 SILICON PLANAR PNP D U A L H IG H -G A IN , LOW-NOISE AM PLIFIER The BFX 36 is a six terminal device containing two isolated high-gain, low-noise, silicon planar epitaxial PNP transistors in Jedec TO-77 metal case. They are designed for use in high performance amplifier and differential amplifier circuits from 1 /UA up to 100 mA.

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER FZT589 HIGH PERFORMANCE TRANSISTOR ISSUE 2 - OCTOBER 1995 - PARTMARKING DETAILS - FZT589 COM PLEMENTARY TYPES - FZT489 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Collector-Base Voltage VALUE

LB-210

Abstract: 1000C FZT955 FZT956 DSA003718
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT ~1 HIGH PERFORMANCE TRANSISTORS ~ ISSUE 2- OCTOBER 1995 FEATURES ● 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages ● Excellent gain characteristics PARTMARKING DETAILS - COMPLEMENTARY

Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FGX591 ISSUE 3 - NOVEMBER 1995_ O_ PARTMARKING DETAILCOMPLEMENTARY TYPE- P1 FCX491 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Collector-Base Voltage VALUE UNIT V CBO

BFX37

Abstract: j191 316b IC pnp silicon planar high performance transistor
Contextual Info: BFX37 SILICON PLANAR PNP LO W -LEVEL, LOW-NOISE AM PLIFIER The BFX37 is a silicon planar epitaxial PNP transistor in Jedec T O -1 8 metal case, designed fo r use in high performance, low -level, low -noise am plifiers over a wide frequency range. It features high current gain over the range from 1juA to 1 0 0 m A and excellent NF at lo w fre ­

BF979

Contextual Info: BF979 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features D High cross modulation performance D High power gain

Contextual Info: FZT955 FZT956 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2 - OCTOBER 1995_ FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps

BF979

Contextual Info: BF979 Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features D High cross modulation performance D High power gain

Contextual Info: BF979 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features D High cross modulation performance D High power gain

FZT857

Abstract: FZT957 FZT958 DSA003675
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT957 FZT958 ISSUE 3 - JANUARY 1996 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp

FZT855

Abstract: FZT956 FZT955
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT955 FZT956 ISSUE 3 – MARCH 2005 FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps C

FZT855

Abstract: FZT955 FZT956 DSA003675
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT955 FZT956 ISSUE 2 – OCTOBER 1995 FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps C

Contextual Info: BF979 VISHAY Vishay Semiconductors Silicon PNP Planar RF Transistor Features • • • • High cross modulation performance High power gain Low noise High reverse attenuation 3 2 1 Applications UHF/VHF uncontrolled prestages with low noise and low modulation.

FZT953

Abstract: FZT853 FZT851 FZT951
Contextual Info: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2 - OCTOBER 1995 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps

A1KA

Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT957 FZT958 ISSUE 3 - JANUARY 1996 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp

Contextual Info: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps

Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FMMT589 ISSUE 5 - JANUARY 1997_ _ FEATURES * Low equivalent on-resistance; RCE sat 250m£2 at 1A PARTMARKING DETAILS COMPLEMENTARY TYPE- 589 FMMT489 ABSOLUTE MAXIMUM RATINGS.

Contextual Info: _ BF979 VIS HAY Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features • • High cross modulation performance

ZUMT491

Contextual Info: ZUMT491 SOT323 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 1 – OCTOBER 94 FEATURES * Extremely low saturation voltage * 500mW power dissipation * 1 Amp continuous collector current IC APPLICATIONS * Ideally suited for space / weight critical applications

Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENTj HIGH PERFORMANCE TRANSISTORS ISSUE 2 - NOVEMBER 1995_;_ ' FEATURES * Extremely lo w equivalent on-resistance; RCHsat) * 6 Am ps continuous current * * * Up to 20 A m ps peak current Very lo w saturation voltage

BC640

Abstract: BC635
Contextual Info: BC635 & BC640 General Purpose Transistor Features: • High performance, low frequency devices. • NPN/PNP Silicon Planar Epitaxial Transistors. • Driver Stages of Audio Amplifier Application. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33

Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE POWER TRANSISTOR ISSUE 3 – OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A * 6 Amps continuous current (Up to 20 Amps peak ) * High gain and very low saturation voltage

TO50 transistor

Contextual Info: Not for new design, this product will be obsoleted soon BF979 Vishay Semiconductors Silicon PNP Planar RF Transistor Features • • • • • • 3 High cross modulation performance High power gain e3 Low noise High reverse attenuation Lead Pb -free component