PNP K2F Search Results
PNP K2F Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TTA011 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
| TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| 2SA1943 |
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PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) | Datasheet | ||
| TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
| TTA004B |
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PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N | Datasheet |
PNP K2F Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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K2F markingContextual Info: MMDT2907A PNP/PNP Multi-Chip Transistor FEATURES • Ideal for Medium Power Amplification and Switching MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit VCBO |
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MMDT2907A OT-363 2002/95/EC Jun-2009, KSTR01 MMDT2907A K2F marking | |
K2F transistor
Abstract: pnp k2f MMDT2907A
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MMDT2907A OT-363 2002/95/EC K2F transistor pnp k2f MMDT2907A | |
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Contextual Info: MMDT2907A PNP/PNP Multi-Chip Transistor FEATURES • Ideal for Medium Power Amplification and Switching MECHANICAL DATA • Case: SOT-363 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI • Lead Free in RoHS 2002/95/EC Compliant |
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MMDT2907A OT-363 2002/95/EC | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT2907A TRANSISTOR PNP FEATURE Complementary NPN Type available MMDT2222A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage |
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OT-363 MMDT2907A MMDT2222A -150mA, -15mA -500mA, -50mA | |
K2F marking
Abstract: DXT2222A
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DXT2907A DXT2222A) OT89-3L OT89-3L J-STD-020C MIL-STD-202, DS30944 621-DXT2907A-13 DXT2907A-13 K2F marking DXT2222A | |
sot 223 K2f TRANSISTOR
Abstract: K2F transistor
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DZT2907A DZT2222A) OT-223 OT-223 J-STD-020C MIL-STD-202, DS30921 621-DZT2907A-13 DZT2907A-13 sot 223 K2f TRANSISTOR K2F transistor | |
K2F transistor
Abstract: DZT2907A ipc-SM-782 K2F marking DZT2222A pnp k2f K2F single
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DZT2907A DZT2222A) OT-223 J-STD-020C MIL-STD-202, DS30921 K2F transistor DZT2907A ipc-SM-782 K2F marking DZT2222A pnp k2f K2F single | |
K2F TRANSISTOR
Abstract: pnp k2f datasheet k2f MMBT2907A-7 J-STD-020A MMBT2222A MMBT2907A
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MMBT2907A MMBT2222A) OT-23 OT-23, J-STD-020A MIL-STD-202, DS30040 K2F TRANSISTOR pnp k2f datasheet k2f MMBT2907A-7 J-STD-020A MMBT2222A MMBT2907A | |
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Contextual Info: SPICE MODEL: MMBT2907A MMBT2907A PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT2222A Ideal for Low Power Amplification and Switching Lead Free/RoHS Compliant (Note 2) |
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MMBT2907A MMBT2222A) OT-23 OT-23 J-STD-020C MIL-STD-202, DS30040 | |
K2F transistorContextual Info: MMBT2907A PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT2907A Features • · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT2222A Ideal for Medium Power Amplification and Switching SOT-23 A C Mechanical Data · · |
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MMBT2907A MMBT2222A) OT-23 OT-23, J-STD-020A MIL-STD-202, DS30040 K2F transistor | |
R2F MARKING sot23Contextual Info: MMBT2907A PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT2222A Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW B C Mechanical Data |
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MMBT2907A MMBT2222A) OT-23 OT-23, MIL-STD-202, -150mA, -15mA -500mA, -50mA 150mA, R2F MARKING sot23 | |
MMDT2907AContextual Info: MMDT2907A PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 A suffix of "-C" specifies halogen-free * Features .055 1.40 .047(1.20) o .026TYP (0.65TYP) 8 o .021REF (0.525)REF Power dissipation PCM : 0.15 W (Tamp.= 25 C) |
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MMDT2907A OT-363 026TYP 65TYP) 021REF 01-Jan-2007 MMDT2907A | |
K2F transistor
Abstract: pnp k2f transistor k2f K2F marking J-STD-020A MMDT2907A K2F DIODES MMDT2907A-7-F
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MMDT2907A OT-363 OT-363, J-STD-020A MIL-STD-202, DS30109 K2F transistor pnp k2f transistor k2f K2F marking J-STD-020A MMDT2907A K2F DIODES MMDT2907A-7-F | |
K2F transistor
Abstract: pnp k2f K2F DIODES K2F 9 K2F single Application of MMBT2907A K2F marking
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MMBT2907A MMBT2222A) AEC-Q101 J-STD-020 MMBT2907A-7-F MMBT2907A-13-F MMBT2907AQand DS30040 K2F transistor pnp k2f K2F DIODES K2F 9 K2F single Application of MMBT2907A K2F marking | |
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sot 223 K2f TRANSISTORContextual Info: SPICE MODEL: DZT2907A DZT2907A NEW PRODUCT PNP SURFACE MOUNT TRANSISTOR Features • • • • • • 3 Epitaxial Planar Die Construction Complementary NPN Type Available DZT2222A Ideally Suited for Automated Assembly Processes Ideal for Medium Power Amplification and Switching |
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DZT2907A DZT2222A) OT-223 OT-223 J-STD-020C MIL-STD-202, DS30921 sot 223 K2f TRANSISTOR | |
K2F transistor
Abstract: pnp k2f transistor k2f K2F marking
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MMDT2907A OT-363 OT-363, J-STD-020A MIL-STD-202, DS30109 K2F transistor pnp k2f transistor k2f K2F marking | |
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Contextual Info: MMDT2907A 60V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Ultra-Small Surface Mount Package Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant Notes 1 & 2 |
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MMDT2907A OT363 J-STD-020 AEC-Q101 MIL-STD202, DS30109 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT2907A TRANSISTOR PNP FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current -0.6 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range |
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OT-363 MMDT2907A -10mA, -15mA -50mA 100MHz -150mA | |
MMDT2907AContextual Info: PRELIMINARY MMDT2907A DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 KXX B C Mechanical Data |
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MMDT2907A OT-363 OT-363, MIL-STD-202, -150mA, -15mA -500mA, -50mA 150mA, 500mA, MMDT2907A | |
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Contextual Info: MMBT2907A PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT2222A Ideal for Medium Power Amplification and Switching SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D |
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MMBT2907A MMBT2222A) OT-23 OT-23, MIL-STD-202, -150mA, -15mA -15mA 300ms, | |
K2F transistor
Abstract: pnp k2f MMDT2907A
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MMDT2907A OT-363, MIL-STD-202, OT-363 MMDT2907A -50mA, 100MHz -150mA, -15mA K2F transistor pnp k2f | |
K2F transistor
Abstract: pnp k2f
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MMDT2907A OT-363 OT-363 MMDT2222A -10mA -150mA -500mA -150mA, -15mA -500mA, K2F transistor pnp k2f | |
K2F transistorContextual Info: SPICE MODEL: MMDT2907A MMDT2907A Lead-free DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction SOT-363 Ideal for Low Power Amplification and Switching A C2 E1 Ultra-Small Surface Mount Package B C Lead Free/RoHS Compliant Note 2 |
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MMDT2907A OT-363 OT-363 J-STD-020C MIL-STD-202, DS30109 K2F transistor | |
K2F transistor
Abstract: K2F marking pnp k2f J-STD-020A MMBT2222A MMBT2907A
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MMBT2907A MMBT2222A) OT-23 OT-23, J-STD-020A MIL-STD-202, DS30040 300mA 100mA K2F transistor K2F marking pnp k2f J-STD-020A MMBT2222A MMBT2907A | |