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    PNP A124 Search Results

    PNP A124 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA011
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TTA004B
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Datasheet
    2SA1943
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Datasheet

    PNP A124 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor PNP A124

    Abstract: A124 transistor transistor PNP A124 EQUIVALENT a124 pnp transistor a124 a124* transistor PNP A124 STA124M a124 IC 4001
    Contextual Info: STA124M Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with STC128M Ordering Information Type NO. STA124M Marking Package Code A124


    Original     		sta124mstc128mo-92mkst-i005-000+12-100ma-500ma-50matransistor pnp a124a124 transistortransistor pnp a124 equivalenta124 pnptransistor a124a124* transistorpnp a124a124ic 4001 PDF

    transistor PNP A124

    Abstract: A124 transistor a124* transistor a124 pnp transistor a124 STA124M PNP A124 A124 STC128M
    Contextual Info: STA124M Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with STC128M Ordering Information Type NO. Marking STA124M Package Code A124


    Original     		sta124mstc128mo-92mkst-i005-001+7transistor pnp a124a124 transistora124* transistora124 pnptransistor a124pnp a124a124 PDF

    TRANSISTOR S1d

    Abstract: Q62702-A1243 SCT-595
    Contextual Info: SMBTA 42M NPN Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 92M PNP 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 42M s1D Q62702-A1243 Package


    Original     		vpw05980q62702-a1243sct-595jun-18-1997+3ehp00842ehp00843transistor s1d PDF

    A1244

    Abstract: NPN S2D Q62702-A1244 SCT-595
    Contextual Info: SMBTA 92M PNP Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 42M NPN 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 92M s2D Q62702-A1244 Package


    Original     		vpw05980q62702-a1244sct-595mar-13-1998+4ehp00881ehp00882a1244npn s2d PDF

    TRANSISTOR S2d

    Abstract: NPN S2D
    Contextual Info: SIEMENS SMBTA 92M PNP Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42M NPN T“* II Q62702-A1244 LU s2D CO SMBTA 92M o Pin Configuration II CM Ordering Code II Marking


    OCR Scan     		q62702-a1244sct-595300nstransistor s2d+1npn s2d PDF

    TRANSISTOR S1d

    Abstract: AX 1101
    Contextual Info: SIEMENS SMBTA 42M NPN Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 92M PNP m h Q62702-A1243 CO II s1D o SMBTA 42M Pin Configuration PO II Marking Ordering Code CD Type


    OCR Scan     		q62702-a1243sct-595ehp00844transistor s1d+1ax 1101 PDF

    Contextual Info: SIEMENS SMBTA 92M PNP Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42M NPN II LD CO Q62702-A1244 II s2D o SMBTA 92M Pin Configuration CM Ordering Code II Marking 0Û


    OCR Scan     		q62702-a1244sct-595 PDF

    Contextual Info: SIEMENS SMBTA 42M NPN Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 92M PNP II LD CO Q62702-A1243 II s1 D o SMBTA 42M Pin Configuration CM Ordering Code II Marking 0Û


    OCR Scan     		q62702-a1243sct-595 PDF

    Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original     		2sa12412sc3076 PDF

    A1244

    Abstract: Transistor a1244 a124* transistor 2sa1244 Equivalent 2SC3074 2SC3074
    Contextual Info: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 µs (typ.) •


    Original     		2sa12442sc307415oductsa1244+3transistor a1244a124* transistorequivalent 2sc3074 PDF

    Contextual Info: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 µs (typ.) •


    Original     		2sa12442sc3074 PDF

    a1241 semiconductor

    Abstract: transistor a1241 a1241
    Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		2sa12412sc3076a1241 semiconductortransistor a1241+1a1241 PDF

    Transistor a1244

    Abstract: a1244 2SA1244 2SC3074
    Contextual Info: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 s (typ.) •


    Original     		2sa12442sc3074transistor a1244a1244 PDF

    Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit：mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original     		2sa12412sc3076 PDF

    transistor a1241

    Abstract: a1241 A1241 transistor a1241 semiconductor transistor a1241 datasheet 2SA1241 2SC3076 a1241 pnp a124* transistor
    Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		2sa12412sc3076transistor a1241a1241+5a1241 transistora1241 semiconductortransistor a1241 datasheeta1241 pnpa124* transistor PDF

    transistor a1241

    Abstract: a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076
    Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		2sa12412sc3076transistor a1241a1241+2transistor a1241 datasheeta1241 semiconductor PDF

    a1244

    Abstract: Transistor a1244 2SA1244 2SC3074
    Contextual Info: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 µs (typ.) •


    Original     		2sa12442sc3074a1244transistor a1244 PDF

    transistor a1241

    Abstract: a1241 transistor a1241 datasheet 2SA1241 2SC3076 a1241 semiconductor a124* transistor A12-41
    Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) · Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		2sa12412sc3076transistor a1241a1241+4transistor a1241 datasheeta1241 semiconductora124* transistora12-41 PDF

    transistor a1241

    Abstract: a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076 A1241 transistor A12-41
    Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original     		2sa12412sc3076transistor a1241a1241+4transistor a1241 datasheeta1241 semiconductora1241 transistora12-41 PDF

    transistor a1241

    Abstract: a1241 semiconductor a1241 transistor a1241 datasheet 2SA1241 2SC3076
    Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original     		2sa12412sc3076transistor a1241a1241 semiconductor+2a1241transistor a1241 datasheet PDF

    Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		2sa12412sc3076 PDF

    Contextual Info: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 µs (typ.) •


    Original     		2sa12442sc3074 PDF

    Transistor a1244

    Abstract: a1244 2SA1244 2SC3074
    Contextual Info: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 s (typ.) •


    Original     		2sa12442sc3074transistor a1244a1244 PDF

    Transistor a1244

    Contextual Info: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 s (typ.) •


    Original     		2sa12442sc3074transistor a1244 PDF