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    PNP 300V Search Results

    PNP 300V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TTA004B
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Datasheet
    TTA011
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    2SA1943
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Datasheet
    TTA014
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.35 V / tf=65 ns / New PW-Mold Datasheet

    PNP 300V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SOT-23 2D

    Abstract: sot 23 2D pnp transistor 300v sot23 MMBTA92 MPSA92 MPSA93
    Contextual Info: UTC MMBTA92 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 2 1 FEATURES * High Collector-Emitter voltage: VCEO=-300V


    Original     		MMBTA92 MMBTA92 -300V 350mW OT-23 MPSA93 MPSA92 625mW 100MHz QW-R206-005 SOT-23 2D sot 23 2D pnp transistor 300v sot23 MPSA92 MPSA93 PDF

    Contextual Info: UTC MMBTA92 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 2 1 FEATURES * High Collector-Emitter voltage: VCEO=-300V


    Original     		MMBTA92 MMBTA92 -300V 350mW OT-23 -30sing QW-R206-005 PDF

    Contextual Info: UTC MMBTA92 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 FEATURES * High Collector-Emitter voltage: VCEO=-300V UTC MMBTA92


    Original     		MMBTA92 MMBTA92 -300V MMBTA92) 625mW OT-23 MPSA93 MPSA92 PDF

    MMBTA92G

    Abstract: MMBTA92 MMBTA92-AE3-R MMBTA92L MMBTA92L-AE3-R
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR „ DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. „ FEATURES * High Collector-Emitter voltage: VCEO=-300V


    Original     		MMBTA92 MMBTA92 -300V 350mW MMBTA92L MMBTA92G MMBTA92-AE3-R MMBTA92L-AE3-R MMBTA92G-AE3-R OT-23 MMBTA92G MMBTA92-AE3-R MMBTA92L PDF

    MMBTA92G

    Abstract: 102 TRANSISTOR MMBTA92 MMBTA92-AE3-R MMBTA92L MMBTA92L-AE3-R
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR „ DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. „ FEATURES * High Collector-Emitter voltage: VCEO=-300V


    Original     		MMBTA92 MMBTA92 -300V 350mW MMBTA92L MMBTA92G MMBTA92-AE3-R MMBTA92L-AE3-R MMBTA92G-AE3-R OT-23 MMBTA92G 102 TRANSISTOR MMBTA92-AE3-R MMBTA92L MMBTA92L-AE3-R PDF

    AL 102 pnp transistor

    Abstract: transistor marking SA p sot-23 MMBTA92 MMBTA92-AE3-R MMBTA92L MMBTA92L-AE3-R SOT-23 2D transistor 5w marking 2D
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR 3 DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 2 FEATURES SOT-23 * High Collector-Emitter voltage: VCEO=-300V


    Original     		MMBTA92 MMBTA92 OT-23 -300V 350mW MMBTA92L MMBTA92-AE3-R MMBTA92L-AE3-R AL 102 pnp transistor transistor marking SA p sot-23 MMBTA92-AE3-R MMBTA92L MMBTA92L-AE3-R SOT-23 2D transistor 5w marking 2D PDF

    mpsa92 transistor

    Abstract: Transistor MPSA92
    Contextual Info: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES 1 * High Collector-Emitter voltage:


    Original     		MPSA92 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW MPSA92 MPSA93 mpsa92 transistor Transistor MPSA92 PDF

    MPSA92

    Contextual Info: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES 1 * High Collector-Emitter voltage:


    Original     		MPSA92 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW MPSA93 PDF

    Contextual Info: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES 1 * High Collector-Emitter voltage:


    Original     		MPSA92 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW MPSA92 MPSA93 PDF

    MPSA92

    Abstract: MPS-A92
    Contextual Info: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 FEATURES * High Collector-Emitter voltage:


    Original     		MPSA92 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW OT-89 MPSA92 MPSA93 MPS-A92 PDF

    MPSA92

    Contextual Info: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 FEATURES * High Collector-Emitter voltage:


    Original     		MPSA92 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW OT-89 MPSA93 PDF

    MJE350 b c e

    Abstract: Power Transistors TO-126 Case MJE350
    Contextual Info: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package


    Original     		MJE350 O-126 MJE350 b c e Power Transistors TO-126 Case MJE350 PDF

    8805 VOLTAGE REGULATOR

    Abstract: MJE350 b c e MJE350 pnp mje350
    Contextual Info: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package


    Original     		MJE350 O-126 8805 VOLTAGE REGULATOR MJE350 b c e MJE350 pnp mje350 PDF

    MPSA93

    Abstract: PZTA92 PZTA93
    Contextual Info: UTC PZTA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 2 1 3 FEATURES * High Collector-Emitter voltage:


    Original     		PZTA92 PZTA92/93 -300V PZTA92) -200V PZTA93) 1000mW OT-223 PZTA92 PZTA93 MPSA93 PZTA93 PDF

    MPSA92L

    Abstract: mpsa92 MPSA92-T92-K MPS-A92A MPSA92 datasheet Mpsa92/93 MPSA93 mpsa92g mpsa92a high voltage pnp transistor
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA92/93 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR „ DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. „ FEATURES * High Collector-Emitter voltage:


    Original     		MPSA92/93 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW MPSA92L/MPSA93L MPSA92G/MPSA93G MPSA92-AB3-R MPSA92L mpsa92 MPSA92-T92-K MPS-A92A MPSA92 datasheet MPSA93 mpsa92g mpsa92a high voltage pnp transistor PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA92/93 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR „ DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. „ FEATURES * High Collector-Emitter voltage:


    Original     		MPSA92/93 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW MPSA92L-AB3-R MPSA92G-AB3-R MPSA93L-AB3-R PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA92/93 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR „ DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. „ FEATURES * High Collector-Emitter voltage:


    Original     		MPSA92/93 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW MPSA92L-AB3-R MPSA92G-AB3-R MPSA92L-T92-B PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR  3 DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier.  2 1 SOT-23 FEATURES JEDEC TO-236


    Original     		MMBTA92 MMBTA92 OT-23 O-236) -300V 350mW MMBTA92G-AE3-R QW-R206-005 PDF

    2N5416

    Contextual Info: 2N5416 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


    Original     		2N5416 O205AD) 10/50m 1-Aug-02 2N5416 PDF

    Contextual Info: MJ4646 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


    Original     		MJ4646 O205AD) 01ctor 19-Jun-02 PDF

    Contextual Info: MJ4646 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


    Original     		MJ4646 O205AD) 17-Jul-02 PDF

    Contextual Info: 2N5416 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


    Original     		2N5416 O205AD) 10/50m 17-Jul-02 PDF

    Contextual Info: BSS76 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 300V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		BSS76 O206AA) 10/30m 16-Jul-02 PDF

    Contextual Info: 2N5416 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


    Original     		2N5416 O205AD) 10/50m 19-Jun-02 PDF