PNP 200V 5A SWITCHING TIMES Search Results

BZX85C12V

Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes

2SC2607

Abstract: 2SA1116 pnp 200v 5a switching characteristics pnp 200v 5a switching times 2SA1116 equivalent
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.

2SC2607

Abstract: 2SA1116 pnp 200v 5a switching times 2SA1116 equivalent 200v 5a transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.

2SC3857

Abstract: 2SA1493
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1493 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3857 APPLICATIONS ·For audio and general purpose applications

2SC2607

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1116 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) • High Power Dissipation

ZTX956

Abstract: DSA003780
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX956 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -770 -900 mV IC=-2A, VCE=-5V* Static Forward Current Transfer Ratio

2SA1493

Abstract: pnp 200v 5a switching characteristics 2SC3857
Contextual Info: Inchange Semiconductor Product Specification 2SA1493 Silicon PNP Power Transistors • DESCRIPTION ·With MT-200 package ·Complement to type 2SC3857 APPLICATIONS ·Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to

2SA1493

Abstract: 2SC3857
Contextual Info: SavantIC Semiconductor Product Specification 2SA1493 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·Complement to type 2SC3857 APPLICATIONS ·Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SA1493

Abstract: 2SC3857
Contextual Info: JMnic Product Specification 2SA1493 Silicon PNP Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SC3857 APPLICATIONS ・Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SC2608

Abstract: 2SA1117 pnp 200v 5a switching times
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1117 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2608 APPLICATIONS ·Designed for general purpose applications.

2SC2607

Abstract: 2SA1116
Contextual Info: JMnic Product Specification 2SA1116 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SC2607 APPLICATIONS ・For power switching amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SC2607

Abstract: 2SA1116 2SA1116 equivalent
Contextual Info: SavantIC Semiconductor Product Specification 2SA1116 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SC2607 APPLICATIONS ·For power switching amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION

2SA1117

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1117 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) • High Power Dissipation

Contextual Info: FZT955 FZT956 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2 - OCTOBER 1995_ FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps

FEBFAN9611_S01U300A

Abstract: schematic diagram 230VAC to 12VDC POWER SUPPLY 106 20V epcos FAN9611 an6086 EFD30 inductor B32914A3105K PHE840MB6100MB05R 230v 5v 2A 10W schematic t0-247 heatsink
Contextual Info: User Guide for FEBFAN9611_S01U300A Evaluation Board FAN9611 300W Interleaved Dual-BCM, Low-Profile, PFC Evaluation Board Featured Fairchild Product: FAN9611 Direct questions or comments about this evaluation board to: “Worldwide Direct Support” Fairchild Semiconductor.com

FZT855

Abstract: FZT956 FZT955
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT955 FZT956 ISSUE 3 – MARCH 2005 FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps C

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX956 ISSUE 3 – JUNE 94 FEATURES * 2 Amps continuous current * Up to 5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 2 Amps * Spice model available C B E E-Line

FZT855Ta

Abstract: fzt855
Contextual Info: A Product Line of Diodes Incorporated Green FZT855 150V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 150V   IC = 5A high Continuous Collector Current  Case Material: Molded Plastic. “Green” Molding Compound. 

FZT855

Abstract: FZT955 FZT956 DSA003675
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT955 FZT956 ISSUE 2 – OCTOBER 1995 FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps C

C3679 equivalent

Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
Contextual Info: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

d2494

Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in

pulsotronic

Abstract: pulsotronic 9914-0800 Metal detector for conveyor belt Pulsotronic metal detector manual pulsotronic 8100-2500 9708-0659 conveyor belt Metal detection sensor distance of 20 cm 9914-0800 metal detector sensor
Contextual Info: TABLE OF CONTENTS Ring Style Sensors Ring Sensor products are used primarily to detect standard . . . . . . . . . . . . . . . . . . . . . . . .6-18 and/or punched parts, and unwanted metals in the re-grind industry. Sensor ring diameters are 12mm to 300mm.

TRANSISTOR BDX

Abstract: TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184
Contextual Info: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BUW 4ff 30 A BUW 49 20 A BUX 69 IS A J/T