PNP 200V Search Results

mpsa92 transistor

Abstract: Transistor MPSA92
Contextual Info: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES 1 * High Collector-Emitter voltage:

TIP522

Contextual Info: TIP522 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 200V 0.41 (0.016)

BSS74

Contextual Info: BSS74 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products

Contextual Info: 2N4930 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 200V 0.41 (0.016)

Contextual Info: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state

Contextual Info: NTE296 Silicon PNP Transistor General Purpose Amplifier Description: The NTE296 is a silicon PNP transistor in a TO202 type case designed for general purpose applications requiring high breakdown voltages, low saturation voltages and low capacitance. Absolute Maximum Ratings:

Contextual Info: BF491j2 j3 PNP SILICON HIGH VOLTAGE TRANSISTORS B F 4 9 1 , BF492, BF493 are PNP silicon planar transistors designed for high voltage video amplifiers in television receivers requiring high breakdown voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS

nte175

Abstract: NTE38
Contextual Info: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high– speed switching and linear amplifier applications for high–voltage operational amplifiers, switching

Contextual Info: MPS-A92 PNP SILICON HIGH VOLTAGE TRANSISTOR TO-92A MPS-A92 is PNP silicon planar epitaxial transistor designed for general purpose applications requiring high breakdown voltage, low saturation voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage

transistor A92

Abstract: TRANSISTOR A42 marking A42 a42 CHANGJIANG a42 TRANSISTOR a92 TRANSISTOR ic for cd rom FMQT4292 transistor BR A92
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-08A Plastic-Encapsulate Transistors FMQT4292 TRANSISTOR WBFBP-08A DESCRIPTION PNP and NPN Epitaxial Silicon Transistor 4x4×0.5 unit: mm FEATURES z Complementary Pair z Tow A42-Type NPN, Tow A92-Type PNP

Contextual Info: MMBTA92, MMBTA93 PNP Silicon Epitaxial Planar Transistors especially suited as line switch in telephone subsets and in video output stages of TV receivers and moni­ tors. Top View As complementary types, the PNP transistors MMBTA42 and MMBTA43 are recommended.

BF423

Contextual Info: UTC BF423 PNP HIGH-VOLTAGE TRANSISTORS PNP HIGH-VOLTAGE TRANSISTORS FEATURES *Collector-Emitter Voltage: VCEO=-250V. APPLICATIONS * High voltage application. * Monitor equipment application. 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C , unless otherwise specified

Contextual Info: 1 MPS-A93 PNP SS SILICON TRANSISTOR 'T O -9 2 A MPS-A93 is PNP silicon planar epitaxial transistor designed for general purpose applications requiring high breakdown voltage, low saturation voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage

Contextual Info: UTC BF423 PNP HIGH-VOLTAGE TRANSISTORS PNP HIGH-VOLTAGE TRANSISTORS FEATURES *Collector-Emitter Voltage: V CEO=-250V. APPLICATIONS * High voltage application. * Monitor equipment application. 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C , unless otherwise specified

TRANSISTOR 023

Abstract: 2N5416 2N5415 2N5415CSM4 2N5416CSM4
Contextual Info: 2N5415CSM4 2N5416CSM4 PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) FEATURES • Silicon Planar PNP Transistor

BF488

Contextual Info: UTC BF488 PNP HIGH-VOLTAGE TRANSISTORS PNP HIGH-VOLTAGE TRANSISTORS FEATURES *Low feedback capacitance. APPLICATIONS *Intended for use in video output stages of black and white and color television receivers. 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS

Contextual Info: • r . BF423 % ~ i :h ï : - ‘. l'\ PNP SILICON TRANSISTOR TO-92 BF423 is PNP silicon plgnar epitaxial transistor designed for high voltage video amplifiers in colour television receivers including grid driver and in driv e r stages ot high voltage line deflection circuits.

MMBTA92

Contextual Info: MMBTA92 PNP HIGH VOLTAGE TRANSISTOR 300 Volts VOLTAGE POWER 225 mWatts FEATURES • PNP silicon, planar design • High voltage max. 300V • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026

Contextual Info: 2N6424 2N6425 SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6424 and 2N6425 are silicon PNP power transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER

2N5415

Contextual Info: 2N5415 2N5416 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5415 and 2N5416 are silicon PNP transistors designed for consumer and industrial line-operated applications. MARKING: FULL PART NUMBER TO-39 CASE

transistor bf420

Abstract: ic 421 BF420 BF421 NPN Transistor TO92 5V 200mA pnp Transistor TO92 5V 200mA
Contextual Info: BF420/421 •■'■V.' NPN/PNP HIGH VOLTAGE SILICON TRANSISTOR ' ' "• ï ; TO -92. BF420 and BF421 are complementary NPN/PNP silicon planar epitaxial transistor . Designed for high voltage video amplifiers in colour television receivers including grid drive and in driver stages of high voltage line deflection

2SB546

Abstract: 2SD401 pnp 200v
Contextual Info: SavantIC Semiconductor Product Specification 2SB546 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD401 ·Collector current IC=-2A ·Collector-base voltage VCBO=-200V APPLICATIONS ·For use in general purpose power

2253A

Abstract: 2SC3788 2SA1478 sa1478 2SA478 a1478
Contextual Info: Ordering num ber: EN Z253A 2SA1478/2SC3788 PNP/NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Video Output Applications Features . High breakdown voltage : VCEO*200V . Small reverse transfer capacitance and excellent high frequency character­

Contextual Info: KSA1406 PNP EPITAXIAL SILICON TRANSISTOR CRT DISPLAY, VIDEO OUTPUT TO -126 • High Current Gain Bandwidth Product: fT = 400MHz TYP • High Voltage: VCB0 = -200V • Low Reverse Transfer Capacitance: CRE=1 •7pF(TYP) ABSOLUTE MAXIMUM RATINGS C haracteristic