TTA2097
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
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CUHS20S60
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Toshiba Electronic Devices & Storage Corporation
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Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H |
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CUHS20F60
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Toshiba Electronic Devices & Storage Corporation
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Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H |
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CUHS15S60
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Toshiba Electronic Devices & Storage Corporation
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Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H |
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CUHS15F60
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Toshiba Electronic Devices & Storage Corporation
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Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H |
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MG250YD2YMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A |
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